公开(公告)号：US07271093B2

公开(公告)日：2007-09-18

申请号：US10852637

申请日：2004-05-24

申请人： Chou San Nelson Loke ,  Kanako Yoshioka ,  Kiyoshi Satoh

发明人： Chou San Nelson Loke ,  Kanako Yoshioka ,  Kiyoshi Satoh

IPC分类号： H01L21/44

CPC分类号： H01L21/76834 ,  H01L21/76807 ,  H01L21/76832 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming an interconnect for a semiconductor device using triple hard layers, comprises: forming a first hard layer serving as an etch stop layer on a metal interconnect-formed dielectric layer; forming a second hard layer on the first hard layer; forming a dielectric layer on the second hard layer; forming a third hard layer on the dielectric layer; forming a hole through the third and second hard layers, the dielectric layer, and the first hard layer; and filling the hole with metal to establish an interconnect. The second and third hard layers are each made of carbon-doped silicon oxide formed from a source gas and a redox gas, while controlling the carbon content in the second hard layer as a function of a flow rate of the redox gas.

摘要翻译： 一种使用三层硬质层形成用于半导体器件的互连的方法包括：在金属互连形成的介电层上形成用作蚀刻停止层的第一硬层; 在所述第一硬质层上形成第二硬质层; 在所述第二硬质层上形成介电层; 在所述电介质层上形成第三硬质层; 通过第三和第二硬质层，电介质层和第一硬质层形成孔; 并用金属填充孔以建立互连。 第二和第三硬层各自由源气体和氧化还原气体形成的碳掺杂氧化硅制成，同时控制第二硬质层中的碳含量作为氧化还原气体的流量的函数。