公开(公告)号：US06511921B1

公开(公告)日：2003-01-28

申请号：US09229137

申请日：1999-01-12

申请人： Christopher A. Panczyk ,  Jonathan M. Madsen ,  Walter Huber

发明人： Christopher A. Panczyk ,  Jonathan M. Madsen ,  Walter Huber

IPC分类号： H01L2131

CPC分类号： H01L21/67115 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/31662

摘要： A process for effectively reducing reactivity of a surface of a semiconductor substrate is described. The process includes: (1) oxidizing in an oxidizing environment the semiconductor substrate surface, the semiconductor substrate having a dopant concentration profile that extends across a depth of the semiconductor substrate; and (2) annealing the semiconductor substrate surface in an inert gas environment, wherein the oxidizing and the annealing of the semiconductor substrate surface are performed at a temperature that is sufficiently low to substantially preserve the dopant concentration profile in the semiconductor substrate. A surface passivation apparatus is also described. The apparatus includes: a heating source for heating a substrate surface; an ozone generator; and a chamber for exposing a substrate surface to an oxidizing environment that includes a gas composition, wherein the ozone generator is configured to produce ozone within the chamber using the gas composition.

摘要翻译： 描述了有效降低半导体衬底的表面的反应性的方法。 该方法包括：（1）在氧化环境中氧化半导体衬底表面，半导体衬底具有穿过半导体衬底的深度延伸的掺杂剂浓度分布; 和（2）在惰性气体环境中退火半导体衬底表面，其中半导体衬底表面的氧化和退火在足够低的温度下进行，从而基本上保持半导体衬底中的掺杂剂浓度分布.A表面钝化 还描述了装置。 该装置包括：用于加热基板表面的加热源; 臭氧发生器; 以及用于将衬底表面暴露于包括气体组合物的氧化环境的室，其中所述臭氧发生器构造成使用所述气体组合物在所述室内产生臭氧。