公开(公告)号：US09865440B1

公开(公告)日：2018-01-09

申请号：US12955851

申请日：2010-11-29

申请人： Stan Kassela ,  Wei Xu ,  Lim Boon Leong ,  Liu Hao Jun ,  Chun Wai Tong ,  Weilu H. Xu ,  Thomas Larson Greenberg ,  Antonio Javier Zambano ,  Robin Andrew Davies

发明人： Stan Kassela ,  Wei Xu ,  Lim Boon Leong ,  Liu Hao Jun ,  Chun Wai Tong ,  Weilu H. Xu ,  Thomas Larson Greenberg ,  Antonio Javier Zambano ,  Robin Andrew Davies

IPC分类号： H01J37/34 ,  C23C14/34

CPC分类号： H01J37/3447 ,  C23C14/3407 ,  C23C14/35 ,  H01J37/3405

摘要： A sputtering apparatus includes a sputtering cathode and a target overlying the sputtering cathode. A shield overlies the target and forms an aperture configured to direct sputtering particles onto a substrate. The shield includes a lower shield portion overlying the target, a channel outlet overlying the lower shield portion, and an upper shield portion overlying the channel. In some embodiments the shield includes a first shield and a second shield. The first shield includes a front gas injection outlet. The second shield overlies the first shield and forms the aperture. In various embodiments, the second shield is operable to adjust plasma confinement between the first shield and the second shield.