公开(公告)号：US06743075B2

公开(公告)日：2004-06-01

申请号：US10346513

申请日：2003-01-15

Applicant: Chun-Te Lin ,  Shan-An Liu ,  Chung-Ru Wu ,  Ming-Hsien Lu

Inventor： Chun-Te Lin ,  Shan-An Liu ,  Chung-Ru Wu ,  Ming-Hsien Lu

IPC: B24B4902

CPC classification number: B24B37/013 ,  B24B37/042 ,  H01L21/31053 ,  H01L21/3212

Abstract: The present invention relates to a method for determining rapidly and accurately the polishing time of a chemical mechanical polishing process for polishing target wafers to avoid any problems of under-polishing or over-polishing. An aspect of the present invention is directed to a method for determining a chemical mechanical polishing time for removing a target polishing thickness H from an uneven surface of a target wafer. The method comprises polishing a control wafer by a chemical mechanical polishing to obtain a progressive relationship of polishing thickness and respective polishing time therefor. A first polishing time T1 is determined for removing a first thickness H1 from the target wafer, in which the first thickness H1 with substantially the uneven surface removed is smaller than the target polishing thickness H of the target wafer to be removed. In some embodiments, the first polishing time T1 is determined by polishing the target wafer to remove the first thickness H1 by chemical mechanical polishing. The method comprises calculating an image polishing thickness H1′ to be removed from the control wafer with respect to the first polishing time T1 according to the progressive relationship of the polishing thickness and respective polishing time for the control wafer. A second polishing thickness H2=(H−H1) is added to the image polishing thickness H1′ to obtain an equivalent polishing thickness H1′ for the control wafer. A target polishing time is determined for removing the target polishing thickness H from the target wafer by interpolating the progressive relationship of the polishing thickness and respective polishing time for the control wafer based on the equivalent polishing thickness H′.

Abstract translation: 本发明涉及一种用于快速准确地确定用于抛光目标晶片的化学机械抛光工艺的抛光时间的方法，以避免抛光不足或过度抛光的任何问题。 本发明的一个方面涉及一种用于确定从目标晶片的不平坦表面去除目标抛光厚度H的化学机械抛光时间的方法。 该方法包括通过化学机械抛光抛光控制晶片以获得抛光厚度和相应的抛光时间的渐进关系。 确定第一抛光时间T1，用于从目标晶片去除第一厚度H1，其中去除了基本上不平坦表面的第一厚度H1小于要去除的目标晶片的目标抛光厚度H. 在一些实施例中，通过抛光目标晶片以通过化学机械抛光去除第一厚度H1来确定第一抛光时间T1。 该方法包括根据抛光厚度与控制晶片的相应抛光时间的渐进关系，相对于第一抛光时间T1计算要从控制晶片移除的图像抛光厚度H1'。 将第二研磨厚度H2 =（H-H1）添加到图像研磨厚度H1'，以获得用于控制晶片的等效抛光厚度H1'。 通过根据等效抛光厚度H'插入控制晶片的研磨厚度和各抛光时间的渐进关系来确定从目标晶片去除目标抛光厚度H的目标抛光时间。