公开(公告)号：US20240363447A1

公开(公告)日：2024-10-31

申请号：US18141447

申请日：2023-04-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Te-Chien HOU ,  Chen-Chi TANG ,  Chi-hsiang SHEN ,  Jeng-Chi LIN ,  Chen-Hao WU ,  Shich-Chang SUEN

IPC: H01L21/66 ,  B24B37/04 ,  G01N23/2251 ,  G06T7/00

CPC classification number: H01L22/12 ,  B24B37/042 ,  G01N23/2251 ,  G06T7/001 ,  H01L22/26 ,  G01N2223/6116 ,  G06T2207/10004 ,  G06T2207/30148 ,  H01L21/3212

Abstract: Embodiments of the present disclosure relate to a CMP tool and methods for planarization a substrate. Particularly, embodiments of the present disclosure relate to an in-situ defect data analyzer to identify CMP induced defects during polishing processing and cleaning processing performed in the CMP tool. In some embodiments, the CMP tool includes an AI (artificial intelligence)-assisted defect database. The defect database may be used to identify and classify CMP related defects, such as scratch, fall-on slurry residuals, during polishing or cleaning process. As a result, defect warning cycle time for a CMP process is improved significantly.

公开(公告)号：US12104112B2

公开(公告)日：2024-10-01

申请号：US17263089

申请日：2018-09-25

Applicant: Showa Denko Materials Co., Ltd.

Inventor： Satoyuki Nomura ,  Tomohiro Iwano ,  Takaaki Matsumoto ,  Tomoyasu Hasegawa ,  Tomomi Kukita

IPC: C09K3/14 ,  B24B37/04 ,  C09G1/02 ,  H01L21/304 ,  H01L21/3105 ,  H01L21/66 ,  C01F17/235

CPC classification number: C09K3/1454 ,  B24B37/042 ,  C09G1/02 ,  C09K3/1409 ,  H01L21/304 ,  H01L21/31053 ,  H01L22/26 ,  C01F17/235 ,  C01P2002/85 ,  C01P2004/64 ,  C01P2006/40

Abstract: A slurry containing abrasive grains and a liquid medium, in which the abrasive grains contain at least one metal compound selected from the group consisting of a metal oxide and a metal hydroxide, the metal compound contains a metal capable of taking a plurality of valences, and when the slurry is brought into contact with a surface to be polished to bring the abrasive grains into contact with the surface to be polished, the slurry yields 0.13 or more in X-ray photoelectron spectroscopy as a ratio of the lowest valence among the plurality of valences of the metal.

公开(公告)号：US20240274440A1

公开(公告)日：2024-08-15

申请号：US18631589

申请日：2024-04-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Te-Chien Hou ,  Yu-Ting Yen ,  Cheng-Yu Kuo ,  Chih Hung Chen ,  William Weilun Hong ,  Kei-Wei Chen

IPC: H01L21/3105 ,  B24B37/04 ,  B24B37/20 ,  C02F1/469 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L21/31053 ,  B24B37/042 ,  B24B37/044 ,  B24B37/20 ,  H01L21/02065 ,  H01L21/31055 ,  H01L29/66545 ,  C02F1/4691

Abstract: A chemical mechanical planarization (CMP) system including a capacitive deionization module (CDM) for removing ions from a solution and a method for using the same are disclosed. In an embodiment, an apparatus includes a planarization unit for planarizing a wafer; a cleaning unit for cleaning the wafer; a wafer transportation unit for transporting the wafer between the planarization unit and the cleaning unit; and a capacitive deionization module for removing ions from a solution used in at least one of the planarization unit or the cleaning unit.

公开(公告)号：US20240253182A1

公开(公告)日：2024-08-01

申请号：US18419564

申请日：2024-01-23

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Ryohei HOKAKU ,  Katsunori TANAKA ,  Wataru YANO

IPC: B24B53/017 ,  B24B37/04

CPC classification number: B24B53/017 ,  B24B37/042

Abstract: A method for conditioning a polishing tool includes: a substrate rotation process, holding a silicon dummy substrate having a main surface in a non-mirror state in a horizontal posture and rotating the dummy substrate about a vertical axis; and a conditioning execution process, executing conditioning of the polishing tool by bringing the polishing tool into contact with the main surface of the dummy substrate that is being rotated, wherein the polishing tool has a resin body in which abrasive grains are dispersed.

公开(公告)号：US20240217059A1

公开(公告)日：2024-07-04

申请号：US18210819

申请日：2023-06-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： WONKEUN CHO

IPC: B24B37/32 ,  B24B37/04 ,  B24B37/26 ,  H01L21/306

CPC classification number: B24B37/32 ,  B24B37/042 ,  B24B37/26 ,  H01L21/30625

Abstract: The present disclosure relates to a chemical mechanical polishing apparatus and a method of controlling the same, and the chemical mechanical polishing apparatus includes: a polishing pad having a hollow shape and including a plurality of first grooves disposed at an edge of the polishing pad and arranged in a circumferential direction; a substrate support positioned below the polishing pad and including an edge portion that adjoins the plurality of first grooves, the substrate support being configured to mount a wafer; and a slurry supplier positioned above the wafer and configured to supply slurry to the wafer.

公开(公告)号：US20240207995A1

公开(公告)日：2024-06-27

申请号：US18528713

申请日：2023-12-04

Applicant: EBARA CORPORATION

Inventor： YOSHITAKA KITAGAWA

IPC: B24B37/005 ,  B24B37/04

CPC classification number: B24B37/005 ,  B24B37/042

Abstract: A polishing device is capable of reducing variations in responsiveness of multiple pressure regulators. The polishing device includes multiple buffer tanks T1 to T6. Each of the buffer tanks T1 to T6 includes a tank section 120 made of a rigid body and a volume adjustment device 122 which adjusts a volume of the buffer tank.

公开(公告)号：US11999027B2

公开(公告)日：2024-06-04

申请号：US17818135

申请日：2022-08-08

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： James Jeng-Jyi Hwang ,  He Hui Peng ,  Jiann Lih Wu ,  Chi-Ming Yang

IPC: H01L21/304 ,  B24B1/00 ,  B24B37/04 ,  B24B37/20 ,  B24B53/017 ,  B24B57/02 ,  H01L21/321 ,  H01L21/67

CPC classification number: B24B37/042 ,  B24B1/00 ,  B24B37/20 ,  B24B53/017 ,  B24B57/02 ,  H01L21/304 ,  H01L21/3212 ,  H01L21/67248

Abstract: A method for polishing a semiconductor substrate includes the following operations. A semiconductor substrate is received. An abrasive slurry having a first temperature is dispensed to a polishing surface of a polishing pad. The semiconductor substrate is polished. The abrasive slurry have a second temperature is dispensed to the polishing surface of the polishing pad during the polishing of the semiconductor substrate. The second temperature is different from the first temperature.

公开(公告)号：US20240173816A1

公开(公告)日：2024-05-30

申请号：US18436499

申请日：2024-02-08

Applicant: Applied Materials, Inc.

Inventor： Steven M. Zuniga ,  Jay Gurusamy ,  Andrew J. Nagengast

IPC: B24B37/30 ,  B24B37/04 ,  B24B49/12 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/66 ,  H01L21/67 ,  H01L21/683

CPC classification number: B24B37/30 ,  B24B37/042 ,  B24B49/12 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/67253 ,  H01L21/6838 ,  H01L22/26

Abstract: A carrier head includes a housing, a support assembly having a support plate flexibly connected to the housing so as to be vertically movable, a plurality of fluid-impermeable barriers projecting from a bottom of the support plate to define a plurality of recesses that are open at bottom sides thereof, and pneumatic control lines. A volume between the support plate and the housing includes one or more independently pressurizable first chambers to apply pressure on a top surface of the support plate in one or more first zones. The barriers divide a volume between the support plate and the substrate into a plurality of second chambers. The pneumatic control lines are coupled to the plurality of recesses to provide a plurality of independently pressurizable second zones.

公开(公告)号：US11967506B2

公开(公告)日：2024-04-23

申请号：US17649625

申请日：2022-02-01

Applicant: DISCO CORPORATION

Inventor： Mato Hattori ,  Ichiro Yamahata

IPC: H01L21/304 ,  B24B27/00 ,  B24B37/04 ,  B24B47/22

CPC classification number: H01L21/304 ,  B24B27/0076 ,  B24B37/042 ,  B24B47/22

Abstract: A grinding apparatus includes a first grinding mechanism, a second grinding mechanism, and a third grinding mechanism for grinding wafers held on respective chuck tables. The first grinding mechanism and the second grinding mechanism are positioned with respect to the chuck tables such that a second ground mark produced on a wafer by second grindstones of the second grinding mechanism as it grinds the wafer extends across a first ground mark produced on the wafer by first grindstones of the first grinding mechanism as it grinds the wafer. The second grinding mechanism and the third grinding mechanism are positioned with respect to the chuck tables such that a third ground mark produced on the wafer by third grindstones of the third grinding mechanism as it grinds the wafer extends across the second ground mark produced on the wafer by the second grindstones.

公开(公告)号：US11964358B2

公开(公告)日：2024-04-23

申请号：US17206628

申请日：2021-03-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shang-Yu Wang ,  Chun-Hao Kung ,  Ching-Hsiang Tsai ,  Kei-Wei Chen ,  Hui-Chi Huang

IPC: B24B37/10 ,  B24B37/04 ,  B24B49/00 ,  H01L21/306

CPC classification number: B24B37/107 ,  B24B37/042 ,  B24B49/00 ,  H01L21/30625

Abstract: A method includes placing a polisher head on platen, the polisher head including a set of first magnets, and controlling a set of second magnets to rotate the polisher head on the platen, wherein controlling the set of second magnets includes reversing the polarity of at least one second magnet of the set of second magnets to produce a magnetic force on at least one first magnet of the set of first magnets, wherein the set of second magnets are external to the polisher head.