公开(公告)号：US20100096566A1

公开(公告)日：2010-04-22

申请号：US12254756

申请日：2008-10-20

申请人： Robert Bristol ,  David Ruzic ,  Corey Struck

发明人： Robert Bristol ,  David Ruzic ,  Corey Struck

IPC分类号： A61N5/00

CPC分类号： H01J37/3056 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/317 ,  H01J2237/3174

摘要： Reducing line edge roughness by particle beam exposure is generally described. In one example, a method includes forming one or more line structures on a surface of a semiconductor substrate, aligning the one or more line structures to a beam path of a particle beam such that particles of the particle beam travel within 45 degrees of parallel to a lengthwise direction of the one or more line structures, and exposing the one or more line structures to the particle beam to reduce line edge roughness of the one or more line structures wherein an incident angle of the particle beam to the surface of the semiconductor substrate is between about 45 degrees and about 90 degrees, where 0 degrees is normal to the surface of the semiconductor substrate.

摘要翻译： 通常描述通过粒子束曝光来减少线边缘粗糙度。 在一个示例中，一种方法包括在半导体衬底的表面上形成一个或多个线结构，将一个或多个线结构对准粒子束的束路径，使得粒子束的粒子在平行于 所述一个或多个线结构的长度方向，并且将所述一个或多个线结构暴露于所述粒子束以减小所述一个或多个线结构的线边缘粗糙度，其中所述粒子束与所述半导体衬底的表面的入射角 在约45度和约90度之间，其中0度垂直于半导体衬底的表面。