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10 条记录 (耗时 0.021 秒)

    Reducing Line Edge Roughness by Particle Beam Exposure
    1.
    发明申请
    Reducing Line Edge Roughness by Particle Beam Exposure 审中-公开
    通过粒子束曝光降低线边缘粗糙度

    公开(公告)号：US20100096566A1

    公开(公告)日：2010-04-22

    申请号：US12254756

    申请日：2008-10-20

    申请人： Robert Bristol ,  David Ruzic ,  Corey Struck

    发明人： Robert Bristol ,  David Ruzic ,  Corey Struck

    IPC分类号： A61N5/00

    CPC分类号： H01J37/3056 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/317 ,  H01J2237/3174

    摘要： Reducing line edge roughness by particle beam exposure is generally described. In one example, a method includes forming one or more line structures on a surface of a semiconductor substrate, aligning the one or more line structures to a beam path of a particle beam such that particles of the particle beam travel within 45 degrees of parallel to a lengthwise direction of the one or more line structures, and exposing the one or more line structures to the particle beam to reduce line edge roughness of the one or more line structures wherein an incident angle of the particle beam to the surface of the semiconductor substrate is between about 45 degrees and about 90 degrees, where 0 degrees is normal to the surface of the semiconductor substrate.

    摘要翻译： 通常描述通过粒子束曝光来减少线边缘粗糙度。 在一个示例中，一种方法包括在半导体衬底的表面上形成一个或多个线结构，将一个或多个线结构对准粒子束的束路径，使得粒子束的粒子在平行于 所述一个或多个线结构的长度方向，并且将所述一个或多个线结构暴露于所述粒子束以减小所述一个或多个线结构的线边缘粗糙度，其中所述粒子束与所述半导体衬底的表面的入射角 在约45度和约90度之间，其中0度垂直于半导体衬底的表面。

    METHOD AND APPARATUS FOR COLD PLASMA TREATMENT OF INTERNAL ORGANS
    6.
    发明申请
    METHOD AND APPARATUS FOR COLD PLASMA TREATMENT OF INTERNAL ORGANS 审中-公开
    冷冻等离子体处理内部器官的方法和装置

    公开(公告)号：US20140005481A1

    公开(公告)日：2014-01-02

    申请号：US13963364

    申请日：2013-08-09

    申请人： Michael Rontal ,  David Ruzic ,  Brian Jurczyk ,  Robert Stubbers

    发明人： Michael Rontal ,  David Ruzic ,  Brian Jurczyk ,  Robert Stubbers

    IPC分类号： A61B18/04

    CPC分类号： A61B18/042 ,  A61B1/0051 ,  A61B1/015 ,  A61B1/267 ,  A61B2017/00323 ,  A61B2018/00327 ,  A61B2090/306 ,  A61B2090/3614

    摘要： Chronic sinusitis is treated by the application of cold plasma or plasma-activated species to the infected mucosal surfaces through use of an endoscope having a steerable end which may be projected into the sinus cavities through the nasal cavity. The cold plasma is generated at either the distal end of the endoscope with a power source by application of a power, or at the distal end by gas and electrical connections extending through the endoscope. The cold plasma or plasma-activated species act to destroy bacterial cells but not eukaryotic cells.

    摘要翻译： 通过使用具有可转向端的内窥镜，通过将冷血浆或血浆活化物质施用于感染的粘膜表面来治疗慢性鼻窦炎，所述内窥镜具有通过鼻腔投射到窦腔中的可转向端。 冷等离子体通过施加电力而在内窥镜的远端处产生电源，或者通过延伸穿过内窥镜的气体和电连接在远端产生。 冷血浆或血浆活化物质可以破坏细菌细胞而不是真核细胞。

    Chemically-enhanced physical vapor deposition
    10.
    发明授权
    Chemically-enhanced physical vapor deposition 失效
    化学增强的物理气相沉积

    公开(公告)号：US06841044B1

    公开(公告)日：2005-01-11

    申请号：US10289237

    申请日：2002-11-04

    申请人： David Ruzic

    发明人： David Ruzic

    IPC分类号： C23C14/00 ,  C23C14/14 ,  C23C14/22 ,  C23C14/32 ,  C23C14/34 ,  C23C14/35 ,  C23C16/06 ,  C23C16/50 ,  C23C16/517

    CPC分类号： C23C14/358 ,  C23C14/0036 ,  C23C14/14 ,  C23C14/22 ,  C23C14/345 ,  C23C16/06 ,  C23C16/50 ,  C23C16/517 ,  H01J37/321

    摘要： A process merges chemical vapor deposition and physical vapor deposition technologies. It allows physical and chemical vapor deposition to occur in the same process chamber, contemporaneously. The “physical” component involves creation of ionized metal atoms. Ionization is typically accomplished via a plasma within the chamber. If the metal vapor is generated by sputtering, a separate plasma generation mechanism may be employed, which is different from the mechanism employed to generate a “source plasma” for generating sputtering species (e.g., argon ions). Alternatively, a single plasma source may be employed to generate the sputtering species and provide additional ionization of the metal vapor, as is the case with hollow cathode magnetron chambers. In some cases, the CVD precursor is introduced through a first line into the process chamber, while a sputtering gas is introduced via a second line.

    摘要翻译： 一个工艺合并化学气相沉积和物理气相沉积技术。 它允许物理和化学气相沉积在同一个处理室中同时发生。 “物理”组分涉及电离金属原子的产生。 电离通常通过室内的等离子体实现。 如果通过溅射产生金属蒸汽，则可以采用单独的等离子体产生机理，其不同于用于产生用于产生溅射物质（例如氩离子）的“源等离子体”的机制。 或者，可以使用单个等离子体源来产生溅射物质并提供金属蒸气的附加电离，如空心阴极磁控管室的情况。 在一些情况下，CVD前体通过第一管线被引入到处理室中，同时通过第二管线引入溅射气体。