公开(公告)号：US08617941B2

公开(公告)日：2013-12-31

申请号：US13007644

申请日：2011-01-16

申请人： Damon Brooks Farmer ,  Qinghuang Lin ,  Yu-Ming Lin

发明人： Damon Brooks Farmer ,  Qinghuang Lin ,  Yu-Ming Lin

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L29/778 ,  B82Y10/00 ,  H01L29/1606 ,  H01L29/4908 ,  H01L29/517 ,  H01L29/66045 ,  H01L29/7781 ,  H01L29/78684

摘要： Graphene or carbon nanotube-based transistor devices and techniques for the fabrication thereof are provided. In one aspect, a transistor is provided. The transistor includes a substrate; a carbon-based material on the substrate, wherein a portion of the carbon-based material serves as a channel region of the transistor and other portions of the carbon-based material serve as source and drain regions of the transistor; a patterned organic buffer layer over the portion of the carbon-based material that serves as the channel region of the transistor; a conformal high-k gate dielectric layer disposed selectively on the patterned organic buffer layer; metal source and drain contacts formed on the portions of the carbon-based material that serve as the source and drain regions of the transistor; and a metal top-gate contact formed on the high-k gate dielectric layer.

摘要翻译： 提供了石墨烯或碳纳米管的晶体管器件及其制造技术。 在一个方面，提供晶体管。 晶体管包括衬底; 在基板上的碳基材料，其中一部分碳基材料用作晶体管的沟道区，碳基材料的其它部分用作晶体管的源极和漏极区; 在用作晶体管的沟道区域的碳基材料的部分上的图案化有机缓冲层; 选择性地设置在图案化的有机缓冲层上的保形高k栅介质层; 形成在用作晶体管的源极和漏极区域的碳基材料的部分上的金属源极和漏极接触; 以及形成在高k栅极电介质层上的金属顶栅极接触。

公开(公告)号：US20120181506A1

公开(公告)日：2012-07-19

申请号：US13007644

申请日：2011-01-16

申请人： Damon Brooks Farmer ,  Qinghuang Lin ,  Yu-Ming Lin

发明人： Damon Brooks Farmer ,  Qinghuang Lin ,  Yu-Ming Lin

IPC分类号： H01L29/16 ,  H01L21/336 ,  H01L29/12 ,  B82Y99/00

CPC分类号： H01L29/778 ,  B82Y10/00 ,  H01L29/1606 ,  H01L29/4908 ,  H01L29/517 ,  H01L29/66045 ,  H01L29/7781 ,  H01L29/78684

摘要： Graphene or carbon nanotube-based transistor devices and techniques for the fabrication thereof are provided. In one aspect, a transistor is provided. The transistor includes a substrate; a carbon-based material on the substrate, wherein a portion of the carbon-based material serves as a channel region of the transistor and other portions of the carbon-based material serve as source and drain regions of the transistor; a patterned organic buffer layer over the portion of the carbon-based material that serves as the channel region of the transistor; a conformal high-k gate dielectric layer disposed selectively on the patterned organic buffer layer; metal source and drain contacts formed on the portions of the carbon-based material that serve as the source and drain regions of the transistor; and a metal top-gate contact formed on the high-k gate dielectric layer.

摘要翻译： 提供了石墨烯或碳纳米管的晶体管器件及其制造技术。 在一个方面，提供晶体管。 晶体管包括衬底; 在基板上的碳基材料，其中一部分碳基材料用作晶体管的沟道区，碳基材料的其它部分用作晶体管的源极和漏极区; 在用作晶体管的沟道区域的碳基材料的部分上的图案化有机缓冲层; 选择性地设置在图案化的有机缓冲层上的保形高k栅介质层; 形成在用作晶体管的源极和漏极区域的碳基材料的部分上的金属源极和漏极接触; 以及形成在高k栅极电介质层上的金属顶栅极接触。