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公开(公告)号：US06814849B2
公开(公告)日：2004-11-09
申请号：US10012943
申请日：2001-12-10
IPC分类号： C25D712
CPC分类号： C25D11/32
摘要： A porous silicon structure is stabilized by anodically oxidizing the structure and then subjecting it to chemical functionalization to protect non-oxidized surface regions, preferably in the presence of 1-decene under thermal conditions. This process creates a protective organic monolayer on the surface of the structure, rendering it highly stable.
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公开(公告)号：US07332441B2
公开(公告)日：2008-02-19
申请号：US10830035
申请日：2004-04-23
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： B82Y30/00 , B05D1/185 , B05D1/60 , B82Y40/00 , H01L21/306 , Y10S436/805 , Y10S436/823
摘要： A method is disclosed for stabilizing porous silicon. A porous silicon structure having a surface terminated with hydrogen atoms is subjected to organic thermal processing to substitute the hydrogen atoms with a protective organic layer. The resulting structures are found to have unprecedented stability.
摘要翻译： 公开了一种稳定多孔硅的方法。 将具有用氢原子封端的表面的多孔硅结构进行有机热处理以用保护性有机层代替氢原子。 发现所得到的结构具有前所未有的稳定性。
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公开(公告)号：US07119361B2
公开(公告)日：2006-10-10
申请号：US10972550
申请日：2004-10-25
IPC分类号： H01L29/08
CPC分类号： C25D11/32
摘要： A porous silicon structure is stabilized by anodically oxidizing the structure and then subjecting it to chemical functionalization to protect non-oxidized surface regions, preferably in the presence of 1-decene under thermal conditions. This process creates a protective organic monolayer on the surface of the structure, rendering it highly stable.
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公开(公告)号：US06677163B1
公开(公告)日：2004-01-13
申请号：US09713300
申请日：2000-11-16
IPC分类号： G01N33552
CPC分类号： C07H15/26 , G01N33/54353 , G01N33/552 , Y10S436/823
摘要： Provided is a method for modifying silicon with an organic molecule, under mild conditions. If the attached molecule is bi-functional, it may be subsequently reacted with a bio-molecule, to form a covalently attached layer of bio-molecule on the silicon surface.
摘要翻译： 提供了在温和条件下用有机分子改性硅的方法。 如果连接的分子是双功能的，则其可以随后与生物分子反应，以在硅表面上形成共价连接的生物分子层。
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公开(公告)号：US06815162B2
公开(公告)日：2004-11-09
申请号：US09803044
申请日：2001-03-12
IPC分类号： C12Q168
CPC分类号： B82Y30/00 , B05D1/185 , B05D1/60 , B82Y40/00 , H01L21/306 , Y10S436/805 , Y10S436/823
摘要： A method is disclosed for stabilizing porous silicon. A porous silicon structure having a surface terminated with hydrogen atoms is subjected to organic thermal processing to substitute the hydrogen atoms with a protective organic layer. The resulting structure are found to have unprecedented stability.
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