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公开(公告)号：US5781017A
公开(公告)日：1998-07-14
申请号：US638519
申请日：1996-04-26
IPC分类号： G01R31/305 , G01R31/302
CPC分类号： G01R31/318513 , G01R31/305
摘要： An electron beam apparatus and method for testing a circuit. The electron beam apparatus comprises an electron beam incident on an outer surface of an insulating layer overlying one or more electrical conductors of the circuit for generating a time varying or alternating current electrical potential on the surface; and a measurement unit connected to the circuit for measuring an electrical signal capacitively coupled to the electrical conductors to identify and map a conduction state of each of the electrical conductors, with or without an electrical bias signal being applied to the circuit. The electron beam apparatus can further include a secondary electron detector for forming a secondary electron image for registration with a map of the conduction state of the electrical conductors. The apparatus and method are useful for failure analysis or qualification testing to determine the presence of any open-circuits or short-circuits, and to verify the continuity or integrity of electrical conductors buried below an insulating layer thickness of 1-100 .mu.m or more without damaging or breaking down the insulating layer. The types of electrical circuits that can be tested include integrated circuits, multi-chip modules, printed circuit boards and flexible printed circuits.
摘要翻译： 一种用于测试电路的电子束装置和方法。 电子束装置包括入射在绝缘层的外表面上的电子束，该绝缘层覆盖电路的一个或多个电导体，用于在表面上产生时变或交流电位; 以及测量单元，其连接到所述电路，用于测量电容耦合到所述电导体的电信号，以识别和映射每个所述电导体的导通状态，所述电传导器的电气偏置信号被施加到所述电路。 电子束装置还可以包括二次电子检测器，用于形成用于与电导体的导通状态的映射对准的二次电子图像。 该装置和方法对于故障分析或鉴定测试是有用的，以确定是否存在任何开路或短路，并且验证埋在1-100μm或更大绝缘层厚度之下的电导体的连续性或完整性 而不会破坏或分解绝缘层。 可测试的电路类型包括集成电路，多芯片模块，印刷电路板和柔性印刷电路。
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公开(公告)号：US5705821A
公开(公告)日：1998-01-06
申请号：US743787
申请日：1996-11-07
摘要： A scanning fluorescent microthermal imaging (FMI) apparatus and method is disclosed, useful for integrated circuit (IC) failure analysis, that uses a scanned and focused beam from a laser to excite a thin fluorescent film disposed over the surface of the IC. By collecting fluorescent radiation from the film, and performing point-by-point data collection with a single-point photodetector, a thermal map of the IC is formed to measure any localized heating associated with defects in the IC.
摘要翻译： 公开了一种用于集成电路（IC）故障分析的扫描荧光微热成像（FMI）装置和方法，其使用来自激光器的扫描和聚焦光束来激发设置在IC表面上的薄荧光膜。 通过从薄膜中收集荧光辐射，并用单点光电检测器进行逐点数据采集，形成IC的热图以测量与IC中缺陷相关的任何局部加热。
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