摘要:
A method and apparatus for separating real DVC via defects from nuisance based on Net Tracing Classification of eBeam VC die comparison inspection results are provided. Embodiments include performing an eBeam VC die comparison inspection on each via of a plurality of dies; determining DVC vias based on the comparison; performing a Net Tracing Classification on the DVC vias; determining S/D DVC vias based on the Net Tracing Classification; and performing a die repeater analysis on the S/D DVC vias to determine systematic design-related DVC via defects.
摘要翻译:提供了一种基于eBeam VC跟踪分类的虚拟DV模块比较检查结果,通过缺陷与真实DVC分离真实DVC的方法和装置。 实施例包括对多个管芯的每个通孔执行eBeam VC管芯比较检查; 根据比较确定DVC通孔; 对DVC通道进行净跟踪分类; 根据网络跟踪分类确定S / D DVC通道; 并对S / D DVC通孔进行芯片中继器分析,以通过缺陷确定与系统设计相关的DVC。
摘要:
An electron-beam induced plasmas is utilized to establish a non-mechanical, electrical contact to a device of interest. This plasma source may be referred to as atmospheric plasma source and may be configured to provide a plasma column of very fine diameter and controllable characteristics. The plasma column traverses the atmospheric space between the plasma source into the atmosphere and the device of interest and acts as an electrical path to the device of interest in such a way that a characteristic electrical signal can be collected from the device. Additionally, by controlling the gases flowing into the plasma column the probe may be used for surface modification, etching and deposition.
摘要:
A method for detecting an electrical defect of contact/via plugs is provided. In the method, the contact/via plugs are monitored by an electron-beam (E-Beam) inspection tool to capture an image with a VC (voltage contrast) difference, and then an image extraction is performed on the image with the VC difference, wherein the image extraction is based on Target gray level/back ground gray level. The extracted image is contrasted with a layout design base to obtain a blind contact or Quasi-blind issue of contact/via plugs. A grayscale value of the VC difference having the blind contact or Quasi-blind issue is compared with a determined range of grayscale value to determine whether the VC difference is abnormal.
摘要:
A system and a method for evaluating a conductor, the method may include: illuminating a first area of a conductor by a first electron beam thereby charging the first area; illuminating by a second electron beam a second area of the conductor; and wherein an aggregate size of the first and second areas is a fraction of an overall size of the conductor; detecting, by a detector, detected emitted electrons that were emitted substantially from the second area and generating detection signals indicative of the detected emitted electrons; and processing, by a processor, the detection signals to provide information about a conductivity of the conductor.
摘要:
A parameter extracting method capable of accurately and effectively extracting parameters used for charged particle beam exposure. The method comprises the steps of forming an unknown parameter layer on a known parameter layer, forming a resist on the unknown parameter layer, subjecting the resist to exposure through patterns changed in an existing range, and extracting parameters of the unknown parameter layer using the exposure result. In the parameter extraction method, parameters of layers lower than the unknown parameter layer are known. Therefore, layer combinations to be considered and the number of experimental data can be drastically reduced. After parameter extraction of the unknown parameter layer, an unknown parameter layer is newly formed on the layer. Then, the parameter thereof is extracted in the same manner. Thus, the parameter is extracted sequentially from lower layers and therefore, the parameter in the multitiered structure having various layer combinations can be accurately and effectively extracted.
摘要:
Provided is a method and apparatus for inspecting a defect of a shape formed on a substrate. Primary inspection is sequentially performed on specific patterns in a plurality of divided regions of the substrate by using an optical method, and one or more regions on which secondary inspection is to be performed are selected from the regions. One or more defects are detected by performing the secondary inspection using an electron beam on the selected regions.
摘要:
The invention relates to a method of calibration of the beam position of a corpuscular beam. A calibration body with structures is used, wherein the structures have a structure period PS in the plain section and within each structure there is a position L intended for the measurement. For the calibration, at least one detection signal each at structures in the plain section of the calibration body is generated, wherein the corpuscular beam is deflected with deflectors on beam target positions L1 with the beam target period P1, which is larger than half of the structure period PS, whereby a basic calibration is used for the control of the deflectors, and wherein the beam target deflections deviate either in the beam target period P1 from the structure period PS and/or in the beam target position L1 from the position L.
摘要:
A system and method for supporting and transferring a substrate relative to a plurality of testing columns are provided. The system includes a testing table adapted to support and move the substrate relative to the plurality of testing columns. The testing table may include an end effector disposed therein to transfer the substrate relative to an upper surface of the testing table. The method includes transferring the substrate to the testing table and moving the substrate relative to the plurality of testing columns. Signals indicative of electronic device performance are sensed to determine operability of the devices on the substrate.
摘要:
In order to provide a semiconductor device evaluation method and a semiconductor device evaluation apparatus for correctly detecting an error position and providing a substrate for observing a cross section without difficulties, a transport unit of a SEM apparatus moves a substrate on a stage. A detection unit detects electric information of observed objects including an error position arranged on the substrate. A calculating unit calculates integrals based on the electric information in at least first and second directions among directions in which arrays of the observed objects are arranged, detects a first waveform obtained by calculating the integral in the first direction and detects a second waveform obtained by calculating the integral in the second direction, wherein the first waveform includes a peak which contains the array of the observed objects including the error position and is larger than at least one of the other peaks, and wherein the second integral-waveform has peaks of substantially the same height. A control unit controls the transport unit so as to move the semiconductor substrate in a direction for maintaining the peak of the first waveform that includes the error position and controls the calculating unit to count the peaks of the second waveform.
摘要:
According to an emission detecting analysis system and method, a test target is placed on a stage inside a chamber. A scanning electron microscope (SEM) column is installed at the chamber to obtain an image of the test target, and an emission detector column is installed at the chamber to detect light emission of the test target. High-magnification emission analysis and accurate detection of an emission point at a test target are obtained. In addition, a physical structure of the emission point is analyzed at the test target to reduce time required for analyzing a failure.