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1.发明授权Local injector of spin-polarized electrons with semiconductor tip under light excitation 失效在光激发下具有半导体尖端的自旋极化电子的本地注入器公开(公告)号：US07841016B2
公开(公告)日：2010-11-23
申请号：US11915611
申请日：2006-05-23
申请人： Daniel Paget , Jacques Peretti , Alistair Rowe , Georges Lampel , Bruno Gerard , Shailendra Bansropun
发明人： Daniel Paget , Jacques Peretti , Alistair Rowe , Georges Lampel , Bruno Gerard , Shailendra Bansropun
IPC分类号： G01Q60/54
摘要： The invention is directed to a spin-polarized electron injector using a semiconductor tip, in which tip the injected electrons are photocreated by a circularly polarized light excitation incident on the rear of the tip. This tip is supported by a transparent lever or cantilever and undergoes a surface treatment for the purpose of removing the surface oxide layer, to prevent said layer from reforming and to improve the proportion of injected electrons.
摘要翻译： 本发明涉及一种使用半导体尖端的自旋极化电子注入器，其中尖端注入的电子被入射在尖端后部的圆偏振光激发光照。 该尖端由透明的杠杆或悬臂支撑，并进行表面处理以去除表面氧化物层，以防止所述层重整并提高注入电子的比例。
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2.发明申请Local Injector of Spin-Polarized Electrons with Semiconductor Tip Under Light 失效具有半导体尖端的自旋极化电子的本地注射器公开(公告)号：US20080210864A1
公开(公告)日：2008-09-04
申请号：US11915611
申请日：2006-05-23
申请人： Daniel Paget , Jacques Peretti , Alistair Rowe , Georges Lampel , Bruno Gerard , Shailendra Bansropun
发明人： Daniel Paget , Jacques Peretti , Alistair Rowe , Georges Lampel , Bruno Gerard , Shailendra Bansropun
摘要： The invention is directed to a spin-polarized electron injector using a semiconductor tip, in which tip the injected electrons are photocreated by a circularly polarized light excitation incident on the rear of the tip. This tip is supported by a transparent lever or cantilever and undergoes a surface treatment for the purpose of removing the surface oxide layer, to prevent said layer from reforming and to improve the proportion of injected electrons.
摘要翻译： 本发明涉及一种使用半导体尖端的自旋极化电子注入器，其中尖端注入的电子被入射在尖端后部的圆偏振光激发光照。 该尖端由透明的杠杆或悬臂支撑，并进行表面处理以去除表面氧化物层，以防止所述层重整并提高注入电子的比例。
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