公开(公告)号：US20060113573A1

公开(公告)日：2006-06-01

申请号：US11290712

申请日：2005-11-29

申请人： Byung-ki Cheong ,  Jeung-hyun Jeong ,  Dao-Hwan Kang ,  Taek Sung Lee ,  In Ho Kim ,  Kyeong Seok Lee ,  Won Mok Kim ,  Dong-Ho Ahn ,  Ki-Burn Kim

发明人： Byung-ki Cheong ,  Jeung-hyun Jeong ,  Dao-Hwan Kang ,  Taek Sung Lee ,  In Ho Kim ,  Kyeong Seok Lee ,  Won Mok Kim ,  Dong-Ho Ahn ,  Ki-Burn Kim

IPC分类号： H01L29/768

CPC分类号： H01L45/06 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/126 ,  H01L45/144

摘要： The present invention provides a non-volatile phase change memory cell containing an electrode contact layer disposed between a metal electrode layer and a phase change material layer, the electrode contact layer being formed of a transparent conducting oxide-based material which has a high electric conductivity, a low thermal conductivity and a good thermal stability. A non-volatile phase change memory cell according to the present invention may be utilized to reduce the electric power needed for reset and set operation.

摘要翻译： 本发明提供了一种非易失性相变存储单元，其包含设置在金属电极层和相变材料层之间的电极接触层，电极接触层由透明导电氧化物基材料形成，该材料具有高导电性 ，导热性低，热稳定性好。 可以使用根据本发明的非易失性相变存储器单元来减少复位和设置操作所需的电力。