公开(公告)号：US20070102834A1

公开(公告)日：2007-05-10

申请号：US11268154

申请日：2005-11-07

申请人： Darwin Enicks ,  John Chaffee ,  Darnian Carver

发明人： Darwin Enicks ,  John Chaffee ,  Darnian Carver

IPC分类号： H01L21/20

CPC分类号： H01L29/7842 ,  H01L29/66242

摘要： A method for pseudomorphic growth and integration of an in-situ doped, strain-compensated metastable compound base into an electronic device, such as, for example, a SiGe NPN HBT, by substitutional placement of strain-compensating atomic species. The invention also applies to strained layers in other electronic devices such as strained SiGe, Si in MOS applications, vertical thin film transistors (VTFT), and a variety of other electronic device types. Devices formed from compound semiconductors other than SiGe, such as, for example, GaAs, InP, and AlGaAs are also amenable to beneficial processes described herein.

摘要翻译： 通过替代放置应变补偿原子物质，将原位掺杂的应变补偿的亚稳化合物碱成为电子器件，例如SiGe NPN HBT的伪生长和整合的方法。 本发明还适用于其它电子器件中的应变层，例如MOS应用中的应变SiGe，Si，垂直薄膜晶体管（VTFT）以及各种其他电子器件类型。 由SiGe以外的化合物半导体形成的器件，例如GaAs，InP和AlGaAs也适用于本文所述的有益的工艺。