公开(公告)号：US20070102834A1

公开(公告)日：2007-05-10

申请号：US11268154

申请日：2005-11-07

申请人： Darwin Enicks ,  John Chaffee ,  Darnian Carver

发明人： Darwin Enicks ,  John Chaffee ,  Darnian Carver

IPC分类号： H01L21/20

CPC分类号： H01L29/7842 ,  H01L29/66242

摘要： A method for pseudomorphic growth and integration of an in-situ doped, strain-compensated metastable compound base into an electronic device, such as, for example, a SiGe NPN HBT, by substitutional placement of strain-compensating atomic species. The invention also applies to strained layers in other electronic devices such as strained SiGe, Si in MOS applications, vertical thin film transistors (VTFT), and a variety of other electronic device types. Devices formed from compound semiconductors other than SiGe, such as, for example, GaAs, InP, and AlGaAs are also amenable to beneficial processes described herein.

摘要翻译： 通过替代放置应变补偿原子物质，将原位掺杂的应变补偿的亚稳化合物碱成为电子器件，例如SiGe NPN HBT的伪生长和整合的方法。 本发明还适用于其它电子器件中的应变层，例如MOS应用中的应变SiGe，Si，垂直薄膜晶体管（VTFT）以及各种其他电子器件类型。 由SiGe以外的化合物半导体形成的器件，例如GaAs，InP和AlGaAs也适用于本文所述的有益的工艺。

公开(公告)号：US20070102729A1

公开(公告)日：2007-05-10

申请号：US11267474

申请日：2005-11-04

申请人： Darwin Enicks ,  John Chaffee ,  Damian Carver

发明人： Darwin Enicks ,  John Chaffee ,  Damian Carver

IPC分类号： H01L31/109 ,  H01L21/331

CPC分类号： H01L29/66242 ,  H01L29/1004 ,  H01L29/7378

摘要： A method and system for providing a bipolar transistor is described. The method and system include providing a compound base region including includes a compound box extension, providing an emitter region, and providing a collector region. The emitter region is coupled with the base region. The SiGe base region is coupled with the collector region and includes a SiGe box extension. The box extension resides substantially between the emitter and the heterogeneous base region.

摘要翻译： 描述了一种用于提供双极晶体管的方法和系统。 该方法和系统包括提供化合物基区，其包括复合框延伸，提供发射区，并提供收集区。 发射极区域与基极区域耦合。 SiGe基极区域与集电极区域耦合并且包括SiGe盒延伸部。 盒扩展基本上位于发射器和异质基极区域之间。

公开(公告)号：US20090189159A1

公开(公告)日：2009-07-30

申请号：US12020930

申请日：2008-01-28

申请人： Darwin Enicks ,  Mark Good ,  John Chaffee

发明人： Darwin Enicks ,  Mark Good ,  John Chaffee

IPC分类号： H01L29/04 ,  H01L21/322

CPC分类号： H01L21/3221 ,  H01L21/3225 ,  H01L21/3226 ,  H01L29/78

摘要： Disclosed herein are devices, methods and systems for implementing gettering layers. Devices including gettering layers can be implemented such that a gettering layer doped with carbon, boron, fluorine or any other appropriate impurity is formed on a semiconductor substrate, a device layer is formed on the gettering layer, and a device region is formed in the device layer having a depth that maintains a distance in the device layer between the gettering layer and the device region.

摘要翻译： 本文公开了用于实现吸气层的装置，方法和系统。 可以实现包括吸气层的装置，使得在半导体衬底上形成掺杂有碳，硼，氟或任何其它合适杂质的吸杂层，在吸气层上形成器件层，器件区形成在器件区 层具有在吸气层和器件区域之间在器件层中保持距离的深度。