公开(公告)号：US20050208768A1

公开(公告)日：2005-09-22

申请号：US10978632

申请日：2004-11-01

申请人： Richard Finlay ,  D. Knight ,  Darren Goodchild ,  Karin Hinzer

发明人： Richard Finlay ,  D. Knight ,  Darren Goodchild ,  Karin Hinzer

IPC分类号： B44C1/22 ,  G02B5/18 ,  H01L21/302 ,  H01L21/308 ,  H01S5/12 ,  H01S5/20

CPC分类号： G02B5/1857 ,  H01L21/3083 ,  H01S5/12 ,  H01S5/1228 ,  H01S5/1231 ,  H01S5/2081 ,  H01S2301/173

摘要： The present invention is a combination of in-situ etching with a grating mask pattern comprised only of semiconductor material, together with the fabrication of a protective layer beneath the semiconductor grating mask that protects the semiconductor material that readily oxidises. As such the present invention is based on a two-stage process. First the grating pattern is defined in a semiconductor material, wherein this pattern is called the semiconductor grating mask. The semiconductor grating mask sits on top of a layer of protective material, which in turn is on top of the semiconductor material that readily oxidises, wherein the protective layer prevents oxidation of the material below. The semiconductor structure is then moved to a reactor, where, in the second stage, the mask pattern is transferred into the underlying protective layer and the semiconductor material that readily oxidises, by in-situ etching. The grating is then overgrown in the same reactor without exposing the etched grating to the atmosphere. The overgrown material protects the underlying semiconductor material from oxidation when the structure is removed from the reactor.

摘要翻译： 本发明是原位蚀刻与仅由半导体材料组成的光栅掩模图案的组合，以及在半导体光栅掩模下面制造保护半导体材料的保护层，其保护易于氧化。 因此，本发明基于两阶段过程。 首先，光栅图案被限定在半导体材料中，其中该图案被称为半导体光栅掩模。 半导体光栅掩模位于保护材料层的顶部，保护材料层又在容易氧化的半导体材料的顶部上，其中保护层防止材料在下面被氧化。 然后将半导体结构移动到反应器中，其中在第二阶段中，通过原位蚀刻将掩模图案转移到下面的保护层和容易氧化的半导体材料。 然后光栅在相同的反应器中过度生长，而不会将蚀刻的光栅暴露在大气中。 当结构从反应器中移除时，杂色成长的材料保护下面的半导体材料免于氧化。