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    METHOD FOR PRODUCING QUANTUM CASCADE LASER AND QUANTUM CASCADE LASER
    3.
    发明申请
    METHOD FOR PRODUCING QUANTUM CASCADE LASER AND QUANTUM CASCADE LASER 有权

    公开(公告)号：US20170170633A1

    公开(公告)日：2017-06-15

    申请号：US15372334

    申请日：2016-12-07

    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

    Inventor： Yukihiro TSUJI

    IPC: H01S5/227 ,  H01S5/12 ,  H01S5/34

    CPC classification number: H01S5/2275 ,  H01S5/1215 ,  H01S5/1225 ,  H01S5/1228 ,  H01S5/124 ,  H01S5/2224 ,  H01S5/3401

    Abstract: A method for producing a quantum cascade laser includes the steps of forming a laser structure including a mesa structure and a buried region embedding the mesa structure; forming a mask on the laser structure, the mask including a first pattern that defines a λ/4 period distribution Bragg reflector structure and a second pattern that defines a 3λ/4 period distribution Bragg reflector structure; and forming a first distribution Bragg reflector structure, a second distribution Bragg reflector structure, and a semiconductor waveguide structure by dry-etching the laser structure through the mask, the semiconductor waveguide structure including the mesa structure that has first and second end facets. The first distribution Bragg reflector structure is optically coupled to the first end facet. The second distribution Bragg reflector structure is optically coupled to the second end facet. Here, λ denotes a value of an oscillation wavelength of the quantum cascade laser in vacuum.

    OPTICAL SEMICONDUCTOR APPARATUS
    4.
    发明申请
    OPTICAL SEMICONDUCTOR APPARATUS 审中-公开

    公开(公告)号：US20170141540A1

    公开(公告)日：2017-05-18

    申请号：US15420843

    申请日：2017-01-31

    Applicant: FURUKAWA ELECTRIC CO., LTD.

    Inventor： Toshihito SUZUKI ,  Kazuaki KIYOTA ,  Tatsuro KUROBE

    IPC: H01S5/12 ,  H01S5/068 ,  H01S5/40

    CPC classification number: H01S5/1228 ,  H01S5/02284 ,  H01S5/0268 ,  H01S5/0612 ,  H01S5/068 ,  H01S5/12 ,  H01S5/227 ,  H01S5/4012 ,  H01S5/4087 ,  H01S5/50

    Abstract: An optical semiconductor apparatus includes: semiconductor laser devices having different emission wavelengths and grouped into at least a first group and a second group; and an arrayed waveguide grating connected to the semiconductor laser devices of the first and second groups and configured to combine laser light beams radiating from the semiconductor laser devices into a same point. The arrayed waveguide grating is configured to combine laser light beams from the semiconductor laser devices belonging to the first group into the same point by diffraction in a first diffraction order in the arrayed waveguide grating, and combine laser light beams from the semiconductor laser devices belonging to the second group into the same point by diffraction in a second diffraction order different from the first diffraction order, in the arrayed waveguide grating.

    Distributed feedback surface emitting laser
    7.
    发明授权
    Distributed feedback surface emitting laser 有权
    分布式反馈表面发射激光器

    公开(公告)号：US09106053B2

    公开(公告)日：2015-08-11

    申请号：US13652136

    申请日：2012-10-15

    Applicant: Palo Alto Research Center Incorporated

    Inventor： Thomas Wunderer

    IPC: H01S5/00 ,  H01S5/12 ,  H01S5/183 ,  H01S5/04 ,  H01S5/343 ,  B82Y20/00

    CPC classification number: H01S5/1228 ,  B82Y20/00 ,  H01S3/09408 ,  H01S5/04 ,  H01S5/041 ,  H01S5/124 ,  H01S5/18358 ,  H01S5/18361 ,  H01S5/18383 ,  H01S5/34333

    Abstract: A semiconductor surface emitting laser (SEL) includes an active zone comprising quantum well structures separated by spacer layers. The quantum well structures are configured to provide optical gain for the SEL at a lasing wavelength, λlase. Each quantum well structure and an adjacent spacer layer are configured to form an optical pair of a distributed Bragg reflector (DBR). The active zone including a plurality of the DBR optical pairs is configured to provide optical feedback for the SEL at λlase.

    Abstract translation: 半导体表面发射激光器（SEL）包括由间隔层隔开的包括量子阱结构的有源区。 量子阱结构被配置为在激光波长λlase处为SEL提供光学增益。 每个量子阱结构和相邻的间隔层被配置成形成分布式布拉格反射器（DBR）的光学对。 包括多个DBR光对的有源区被配置为以λlase为SEL提供光学反馈。

    Multicolor photonic crystal laser array
    8.
    发明授权
    Multicolor photonic crystal laser array 有权
    多色光子晶体激光器阵列

    公开(公告)号：US09020005B2

    公开(公告)日：2015-04-28

    申请号：US14171231

    申请日：2014-02-03

    Applicant: Sandia Corporation

    Inventor： Jeremy B. Wright ,  Igal Brener ,  Ganapathi S. Subramania ,  George T. Wang ,  Qiming Li

    IPC: H01S5/00 ,  H01S5/187 ,  H01S5/18 ,  H01S5/183 ,  H01S5/10 ,  H01S5/12 ,  H01S5/34 ,  H01S5/343 ,  H01S5/42

    CPC classification number: H01S5/187 ,  H01S5/10 ,  H01S5/105 ,  H01S5/1228 ,  H01S5/18 ,  H01S5/18319 ,  H01S5/341 ,  H01S5/3428 ,  H01S5/34333 ,  H01S5/42

    Abstract: A multicolor photonic crystal laser array comprises pixels of monolithically grown gain sections each with a different emission center wavelength. As an example, two-dimensional surface-emitting photonic crystal lasers comprising broad gain-bandwidth III-nitride multiple quantum well axial heterostructures were fabricated using a novel top-down nanowire fabrication method. Single-mode lasing was obtained in the blue-violet spectral region with 60 nm of tuning (or 16% of the nominal center wavelength) that was determined purely by the photonic crystal geometry. This approach can be extended to cover the entire visible spectrum.

    Abstract translation: 多色光子晶体激光器阵列包括具有不同发射中心波长的单片生长增益部分的像素。 作为示例，使用新颖的自顶向下纳米线制造方法制造包括宽增益带宽III族氮化物多量子阱轴向异质结构的二维表面发射光子晶体激光器。 在具有60nm调谐（或标称中心波长的16％）的蓝紫色光谱区域中获得单模激光，其仅由光子晶体几何形状确定。 这种方法可以扩展到覆盖整个可见光谱。

    Edge-emitting semiconductor laser
    9.
    发明授权
    Edge-emitting semiconductor laser 有权
    边缘发射半导体激光器

    公开(公告)号：US08995491B2

    公开(公告)日：2015-03-31

    申请号：US14118819

    申请日：2012-06-08

    Applicant: Hans Lindberg

    Inventor： Hans Lindberg

    IPC: H01S5/00 ,  H01S5/10 ,  H01S5/042 ,  H01S5/40 ,  H01S5/12 ,  H01S5/026 ,  H01S5/065

    CPC classification number: H01S5/1003 ,  H01S5/026 ,  H01S5/0425 ,  H01S5/0654 ,  H01S5/1032 ,  H01S5/1203 ,  H01S5/1228 ,  H01S5/1246 ,  H01S5/4031 ,  H01S5/4087

    Abstract: An edge-emitting semiconductor laser includes a first waveguide layer, into which an active layer that generates laser radiation is embedded. The laser also includes a second waveguide layer, into which no active layer is embedded. The laser radiation generated in the active layer forms a standing wave, which has respective intensity maxima in the first waveguide layer and corresponding intensity minima in the second waveguide layer and respective intensity minima in the first waveguide layer and corresponding intensity maxima in the second waveguide layer at periodic intervals in a beam direction of the semiconductor laser. An at least regionally periodic contact structure is arranged at a surface of the edge-emitting semiconductor laser. A period length of the contact structure is equal to a period length of the standing wave, such that the semiconductor laser has an emission wavelength that is set by the period length of the contact structure.

    Abstract translation: 边缘发射半导体激光器包括嵌入有产生激光辐射的有源层的第一波导层。 该激光器还包括其中没有嵌入有源层的第二波导层。 在有源层中产生的激光辐射形成驻波，其在第一波导层中具有相应的强度最大值，并且在第二波导层中具有相应的强度最小值，并且在第一波导层中具有相应的强度最小值，并且在第二波导层中具有相应的强度最大值 在半导体激光器的光束方向上的周期性间隔。 在边缘发射半导体激光器的表面设置至少区域性周期性接触结构。 接触结构的周期长度等于驻波的周期长度，使得半导体激光器具有由接触结构的周期长度设定的发射波长。

    SEMICONDUCTOR OPTICAL ELEMENT
    10.
    发明申请
    SEMICONDUCTOR OPTICAL ELEMENT 有权
    半导体光学元件

    公开(公告)号：US20150055669A1

    公开(公告)日：2015-02-26

    申请号：US14376662

    申请日：2012-08-02

    Applicant: Kazuki Tani ,  Shinichi Saito ,  Katsuya Oda

    Inventor： Kazuki Tani ,  Shinichi Saito ,  Katsuya Oda

    IPC: H01S5/32

    CPC classification number: H01S5/3223 ,  H01L33/34 ,  H01L33/38 ,  H01S5/0206 ,  H01S5/021 ,  H01S5/0424 ,  H01S5/1228 ,  H01S5/125 ,  H01S5/2272

    Abstract: To provide a light-emitting element where electrons are efficiently injected into a Ge light emission layer and light can be efficiently emitted, the light-emitting element has a barrier layer 3 which is formed on an insulating film 2, worked in a size in which quantum confinement effect manifests and made of monocrystalline Si, a p-type diffused layer electrode 5 and an n-type diffused layer electrode 6 respectively provided at both ends of the barrier layer 3, and a monocrystalline Ge light emission part 13 provided on the barrier layer 3 between the electrodes 5, 6. At least a part of current that flows between the electrodes 5, 6 flows in the barrier layer 3 in a horizontal direction with respect to a substrate 1.

    Abstract translation: 为了提供一种发光元件，其中电子被有效地注入到Ge发光层中并且可以有效地发射光，发光元件具有形成在绝缘膜2上的阻挡层3，该阻挡层3以 量子限制效应表现为单晶Si，分别设置在阻挡层3的两端的p型扩散层电极5和n型扩散层电极6以及设置在势垒层3上的单晶Ge发光部13 在电极5,6之间流动的电流的至少一部分在阻挡层3中相对于基板1在水平方向上流动。

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