公开(公告)号：US5908306A

公开(公告)日：1999-06-01

申请号：US011202

申请日：1993-01-29

申请人： Akira Ishibashi ,  David G. Ravenhall ,  Roy L. Schult ,  Henry W. Wyld

发明人： Akira Ishibashi ,  David G. Ravenhall ,  Roy L. Schult ,  Henry W. Wyld

IPC分类号： H01L29/06 ,  H01L21/18 ,  H01L21/20 ,  H01L29/66 ,  H01L29/80

CPC分类号： B82Y10/00 ,  H01L29/66075 ,  H01L29/66977

摘要： A semiconductor device exploiting a quantum interference effect is disclosed. The device comprises: a channel region connected multiply with multiplicity of n (n.gtoreq.3) and having (n-1)-fold rotational symmetry around an axis of the channel region; a gate electrode surrounding a side wall of the channel region; and source and drain electrodes electrically connected to one and another end of the channel region along the axis. Electrons move in an effective channel region along or around the axis from the source toward the drain. Electron interference in the effective channel region is controlled by a magnetic field applied in the axis direction and/or the gate electrode.

摘要翻译： 公开了一种利用量子干涉效应的半导体器件。 该装置包括：一个通道区域，多个n（n> / = 3）并且具有围绕通道区域的轴线具有（n-1）倍的旋转对称的多个连接; 围绕所述沟道区域的侧壁的栅电极; 并且源极和漏极电极沿着轴线电连接到沟道区域的一端和另一端。 电子沿着或围绕轴线从源极向漏极移动在有效沟道区域中。 有效沟道区域中的电子干涉由在轴向和/或栅电极上施加的磁场来控制。