公开(公告)号：US12125916B2

公开(公告)日：2024-10-22

申请号：US18081177

申请日：2022-12-14

申请人： Google LLC

发明人： Stephen M. Cea ,  Annalisa Cappellani ,  Martin D. Giles ,  Rafael Rios ,  Seiyon Kim ,  Kelin J. Kuhn

IPC分类号： H01L29/786 ,  H01L21/268 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78 ,  B82Y40/00

CPC分类号： H01L29/78618 ,  H01L21/268 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/42356 ,  H01L29/42392 ,  H01L29/66477 ,  H01L29/66742 ,  H01L29/66787 ,  H01L29/66977 ,  H01L29/7845 ,  H01L29/7848 ,  H01L29/78651 ,  H01L29/78684 ,  H01L29/78696 ,  B82Y40/00 ,  H01L29/7839

摘要： Nanowire structures having non-discrete source and drain regions are described. For example, a semiconductor device includes a plurality of vertically stacked nanowires disposed above a substrate. Each of the nanowires includes a discrete channel region disposed in the nanowire. A gate electrode stack surrounds the plurality of vertically stacked nanowires. A pair of non-discrete source and drain regions is disposed on either side of, and adjoining, the discrete channel regions of the plurality of vertically stacked nanowires.

公开(公告)号：US20240297241A1

公开(公告)日：2024-09-05

申请号：US18569751

申请日：2021-06-14

申请人： Rheinisch-Westfälische Technische Hochschule (RWTH Aachen)

发明人： Lars Schreiber ,  Matthias Künne

IPC分类号： H01L29/66 ,  G06N10/40 ,  H01L29/12

CPC分类号： H01L29/66977 ,  G06N10/40 ,  H01L29/122

摘要： Qubit element (1), comprising



quantum well structure (2), within which a quantum well (3) is formed along a first direction (x),
an electrode arrangement (4) adapted to restrict a movement of a charge carrier in the quantum well (3) in and against a second direction (y) and in and against a third direction (z), in order to form a quantum dot (5), wherein the first direction (x), the second direction (y), and the third direction (z) are respectively perpendicular to one another in pairs,
a base layer (6) formed from strained silicon adjacent to the quantum well structure (2) against the first direction (x).

公开(公告)号：US12027610B2

公开(公告)日：2024-07-02

申请号：US17474175

申请日：2021-09-14

申请人： IMEC VZW

发明人： George Eduard Simion ,  Fahd Ayyalil Mohiyaddin ,  Stefan Kubicek ,  Bogdan Govoreanu ,  Florin Ciubotaru ,  Ruoyu Li

IPC分类号： H01L29/66 ,  G06N10/00 ,  H10N50/80 ,  B82Y10/00

CPC分类号： H01L29/66977 ,  G06N10/00 ,  H10N50/80 ,  B82Y10/00

摘要： According to an aspect of the present inventive concept there is provided a qubit device comprising: a semiconductor substrate layer; a set of control gates configured to define a row of electrostatically confined quantum dots along the substrate layer, each quantum dot being suitable for holding a qubit; and a set of nanomagnets arranged in a row over the substrate layer such that a nanomagnet is arranged above every other quantum dot of the row of quantum dots, wherein each nanomagnet has an out-of-plane magnetization with respect to the substrate layer and wherein every other quantum dot is subjected to an out-of-plane magnetic field generated by a respective nanomagnet, such that a qubit spin resonance frequency of every other quantum dot is shifted with respect to an adjacent quantum dot of the row of quantum dots.

公开(公告)号：US20240178303A1

公开(公告)日：2024-05-30

申请号：US18432985

申请日：2024-02-05

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Harry-Hak-Lay Chuang ,  Yi-Ren Chen ,  Chi-Wen Liu ,  Chao-Hsiung Wang ,  Ming Zhu

IPC分类号： H01L29/66 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/08 ,  H01L27/092 ,  H01L29/78

CPC分类号： H01L29/66977 ,  H01L21/823487 ,  H01L21/823885 ,  H01L27/0802 ,  H01L27/092 ,  H01L28/20 ,  H01L29/66666 ,  H01L29/785

摘要： The present disclosure provides one embodiment of a semiconductor structure. The semiconductor structure includes a semiconductor substrate having a first region and a second region; a first semiconductor mesa formed on the semiconductor substrate within the first region; a second semiconductor mesa formed on the semiconductor substrate within the second region; and a field effect transistor (FET) formed on the semiconductor substrate. The FET includes a first doped feature of a first conductivity type formed in a top portion of the first semiconductor mesa; a second doped feature of a second conductivity type formed in a bottom portion of the first semiconductor mesa, the second semiconductor mesa, and a portion of the semiconductor substrate between the first and second semiconductor mesas; a channel in a middle portion of the first semiconductor mesa and interposed between the source and drain; and a gate formed on sidewall of the first semiconductor mesa.

公开(公告)号：US11894448B2

公开(公告)日：2024-02-06

申请号：US17406861

申请日：2021-08-19

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Harry-Hak-Lay Chuang ,  Yi-Ren Chen ,  Chi-Wen Liu ,  Chao-Hsiung Wang ,  Ming Zhu

IPC分类号： H01L29/66 ,  H01L27/08 ,  H01L21/8234 ,  H01L27/092 ,  H01L21/8238 ,  H01L29/78 ,  H01L49/02

CPC分类号： H01L29/66977 ,  H01L21/823487 ,  H01L21/823885 ,  H01L27/0802 ,  H01L27/092 ,  H01L28/20 ,  H01L29/66666 ,  H01L29/785

摘要： The present disclosure provides one embodiment of a semiconductor structure. The semiconductor structure includes a semiconductor substrate having a first region and a second region; a first semiconductor mesa formed on the semiconductor substrate within the first region; a second semiconductor mesa formed on the semiconductor substrate within the second region; and a field effect transistor (FET) formed on the semiconductor substrate. The FET includes a first doped feature of a first conductivity type formed in a top portion of the first semiconductor mesa; a second doped feature of a second conductivity type formed in a bottom portion of the first semiconductor mesa, the second semiconductor mesa, and a portion of the semiconductor substrate between the first and second semiconductor mesas; a channel in a middle portion of the first semiconductor mesa and interposed between the source and drain; and a gate formed on sidewall of the first semiconductor mesa.

公开(公告)号：US11799035B2

公开(公告)日：2023-10-24

申请号：US16846052

申请日：2020-04-10

申请人： THE RESEARCH FOUNDATION FOR THE STATE UNIVERSITY OF NEW YORK

发明人： Supriyo Karmakar

IPC分类号： H01L29/66 ,  H01L29/12 ,  H01L29/423 ,  H01L29/786 ,  H01L29/49 ,  H01L29/778 ,  B82Y10/00 ,  H01L29/08

CPC分类号： H01L29/78696 ,  H01L29/127 ,  H01L29/42392 ,  H01L29/49 ,  H01L29/66977 ,  H01L29/778 ,  H01L29/78618 ,  H01L29/78642 ,  B82Y10/00 ,  H01L29/0847

摘要： Various gate all-around field effect transistors (GAAFET) including quantum-based features are disclosed. GAAFET may include a center core including a first end and a second end, a source region positioned circumferentially around the first end of the center core, and a drain region positioned circumferentially around the second end of the center core. The drain region may also be positioned axially opposite the source region. The GAAFET may also include a gate portion axially positioned between the source region and the drain region. The gate portion may include at least one quantum-based feature circumferentially disposed around the center core, and a gate contact circumferentially disposed around the quantum-based feature(s). The quantum-based feature(s) may include a plurality of quantum dots (QD) or at least one quantum well channel.

公开(公告)号：US20230275087A1

公开(公告)日：2023-08-31

申请号：US18311582

申请日：2023-05-03

申请人： Intel Corporation

发明人： James S. Clarke ,  Nicole K. Thomas ,  Zachary R. Yoscovits ,  Hubert C. George ,  Jeanette M. Roberts ,  Ravi Pillarisetty

IPC分类号： H01L27/088 ,  G06N10/00 ,  H10N69/00 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/778

CPC分类号： H01L27/088 ,  G06N10/00 ,  H01L21/823456 ,  H01L29/66977 ,  H01L29/778 ,  H10N69/00 ,  B82Y10/00

摘要： Quantum dot devices, and related systems and methods, are disclosed herein. In some embodiments, a quantum dot device may include a quantum well stack; a plurality of first gates above the quantum well stack; and a plurality of second gates above the quantum well stack; wherein the plurality of first gates are arranged in electrically continuous rows extending in a first direction, and the plurality of second gates are arranged in electrically continuous rows extending in a second direction perpendicular to the first direction.

公开(公告)号：US11721724B2

公开(公告)日：2023-08-08

申请号：US17364985

申请日：2021-07-01

申请人： Intel Corporation

发明人： Nicole K. Thomas ,  James S. Clarke ,  Jessica M. Torres ,  Ravi Pillarisetty ,  Kanwaljit Singh ,  Payam Amin ,  Hubert C. George ,  Jeanette M. Roberts ,  Roman Caudillo ,  David J. Michalak ,  Zachary R. Yoscovits ,  Lester Lampert

IPC分类号： H01L29/12 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/66 ,  H01L29/82

CPC分类号： H01L29/122 ,  H01L21/823431 ,  H01L27/0886 ,  H01L29/66977 ,  H01L29/66984 ,  H01L29/82

摘要： Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack including a quantum well layer, wherein the quantum well layer includes an isotopically purified material; a gate dielectric above the quantum well stack; and a gate metal above the gate dielectric, wherein the gate dielectric is between the quantum well layer and the gate metal.

公开(公告)号：US20230187503A1

公开(公告)日：2023-06-15

申请号：US17462733

申请日：2021-08-31

申请人： Infinite Potential Laboratories LP

发明人： Steve MacLean ,  François Fillion-Gourdeau ,  Pierre Louis Joseph Lévesque ,  Jean-Philippe W. MacLean

IPC分类号： H01L29/16 ,  G06N10/40 ,  H01L29/66 ,  H01L29/06

CPC分类号： H01L29/1606 ,  G06N10/40 ,  H01L29/66977 ,  H01L29/0676 ,  B82Y10/00

摘要： In a general aspect, a quantum control device includes a substrate having a substrate surface. An insulator layer is disposed over the substrate surface and defines a cavity. The insulator layer includes an insulator surface that defines an opening to the cavity. The quantum control device also includes a field-responsive layer over the insulator surface. The field-responsive layer includes a target region that resides over the opening to the cavity. The quantum control device additionally includes a projection extending from the substrate into the cavity and terminating at a tip. The projection is configured to produce an electric field that interacts with a quantum state in the target region. The tip resides in the cavity and configured to concentrate the electric field produced by the projection.

公开(公告)号：US11677016B1

公开(公告)日：2023-06-13

申请号：US17300474

申请日：2021-07-14

申请人： Sammy K Brown ,  John D. Bryant ,  Thomas Brumett

发明人： Sammy K Brown ,  John D. Bryant ,  Thomas Brumett

IPC分类号： H01L29/66 ,  H01L29/417 ,  H01J21/06 ,  H01L21/02

CPC分类号： H01L29/66977 ,  H01J21/06 ,  H01L21/02606 ,  H01L29/41725

摘要： A nano-vacuum tube (NVT) transistor comprising a source having a knife edge, a drain, and a channel formed between the source and the drain, the channel having a width to provide a pseudo-vacuum in a normal atmosphere. The NVT transistor utilizing a space charge plasma formed at the knife edge within the channel.