公开(公告)号：US06888146B1

公开(公告)日：2005-05-03

申请号：US09289332

申请日：1999-04-09

Applicant: Ka-Ngo Leung ,  William A. Barletta ,  David O. Patterson ,  Richard A. Gough

Inventor： Ka-Ngo Leung ,  William A. Barletta ,  David O. Patterson ,  Richard A. Gough

IPC: H01J3/18

CPC classification number: H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/045 ,  H01J2237/0435

Abstract: A maskless micro-ion-beam reduction lithography system is a system for projecting patterns onto a resist layer on a wafer with feature size down to below 100 nm. The MMRL system operates without a stencil mask. The patterns are generated by switching beamlets on and off from a two electrode blanking system or pattern generator. The pattern generator controllably extracts the beamlet pattern from an ion source and is followed by a beam reduction and acceleration column.

Abstract translation: 无掩模微离子束还原光刻系统是用于将图案投影到具有低于100nm的特征尺寸的晶片上的抗蚀剂层上的系统。 MMRL系统在没有模板掩模的情况下运行。 通过从两个电极消隐系统或图案发生器切换小束来产生图案。 图案发生器可控地从离子源提取子束图案，然后是光束减小和加速柱。