Test Pads, Methods and Systems for Measuring Properties of a Wafer
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    发明申请
    Test Pads, Methods and Systems for Measuring Properties of a Wafer 审中-公开
    测试垫,测量硅片性能的方法和系统

    公开(公告)号:US20070109003A1

    公开(公告)日:2007-05-17

    申请号:US11465888

    申请日:2006-08-21

    IPC分类号: G01R31/02

    摘要: Test pads, methods, and systems for measuring properties of a wafer are provided. One test pad formed on a wafer includes a test structure configured such that one or more electrical properties of the test structure can be measured. The test pad also includes a conductive layer formed between the test structure and the wafer. The conductive layer prevents structures located under the test structure between the conductive layer and the wafer from affecting the one or more electrical properties of the test structure during measurement. One method for assessing plasma damage of a wafer includes measuring one or more electrical properties of a test structure formed on the wafer and determining an index characterizing the plasma damage of the test structure using the one or more electrical properties.

    摘要翻译: 提供了用于测量晶片性能的测试垫,方法和系统。 形成在晶片上的一个测试焊盘包括测试结构,其被配置为使得可以测量测试结构的一个或多个电特性。 测试垫还包括在测试结构和晶片之间形成的导电层。 导电层防止在测量期间位于导电层和晶片之间的测试结构下方的结构影响测试结构的一个或多个电性能。 用于评估晶片的等离子体损伤的一种方法包括测量形成在晶片上的测试结构的一个或多个电特性,并使用一个或多个电性质确定表征测试结构的等离子体损伤的指标。