公开(公告)号：US06261951B1

公开(公告)日：2001-07-17

申请号：US09472346

申请日：1999-12-27

申请人： Leena P. Buchwalter ,  Barbara Luther ,  Paul D. Agnello ,  John P. Hummel ,  Terence Lawrence Kane ,  Dirk Karl Manger ,  Paul Stephen McLaughlin ,  Anthony Kendall Stamper ,  Yun Yu Wang

发明人： Leena P. Buchwalter ,  Barbara Luther ,  Paul D. Agnello ,  John P. Hummel ,  Terence Lawrence Kane ,  Dirk Karl Manger ,  Paul Stephen McLaughlin ,  Anthony Kendall Stamper ,  Yun Yu Wang

IPC分类号： H01L214763

CPC分类号： H01L21/3185 ,  H01L21/0445 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76834

摘要： The present invention utilizes a reducing plasma treatment step to enhance the adhesion of a subsequently deposited inorganic barrier film to a copper wire or via present in a semiconductor interconnect structure such as a dual damascene structure. Interconnect structure comprising a material layer of Cu, Si and O, as essential elements, is formed between said copper wire or via and the inorganic barrier film.

公开(公告)号：US06593660B2

公开(公告)日：2003-07-15

申请号：US09866937

申请日：2001-05-29

申请人： Leena P. Buchwalter ,  Barbara Luther ,  Paul D. Agnello ,  John P. Hummel ,  Terence Lawrence Kane ,  Dirk Karl Manger ,  Paul Stephen McLaughlin ,  Anthony Kendall Stamper ,  Yun Yu Wang

发明人： Leena P. Buchwalter ,  Barbara Luther ,  Paul D. Agnello ,  John P. Hummel ,  Terence Lawrence Kane ,  Dirk Karl Manger ,  Paul Stephen McLaughlin ,  Anthony Kendall Stamper ,  Yun Yu Wang

IPC分类号： H01L2348

CPC分类号： H01L21/3185 ,  H01L21/0445 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76834

摘要： The present invention utilizes a reducing plasma treatment step to enhance the adhesion of a subsequently deposited inorganic barrier film to a copper wire or via present in a semiconductor interconnect structure such as a dual damascene structure. Interconnect structure including a material layer of Cu, Si and O, as essential elements, is formed between said copper wire or via and the inorganic barrier film.

摘要翻译： 本发明利用还原等离子体处理步骤来增强后续沉积的无机阻挡膜对铜线的粘附，或通过存在于诸如双镶嵌结构的半导体互连结构中。 在所述铜线或通孔与无机阻挡膜之间形成包括作为必需元素的Cu，Si和O的材料层的互连结构。