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1.发明授权Electrically pumped broadly tunable mid-infrared lasers based on quantum confined transition metal doped semiconductors 有权基于量子限制过渡金属掺杂半导体的电泵浦广泛可调谐的中红外激光器公开(公告)号：US08284805B2
公开(公告)日：2012-10-09
申请号：US12282874
申请日：2007-03-12
IPC分类号： H01S3/10
CPC分类号： H01S3/06 , H01S3/162 , H01S3/1628 , H01S3/169 , H01S5/3018 , H01S5/3068 , H01S5/327
摘要： Electrically pumped mid-IR semiconductor lasers that are operable at room temperature and possess a range of tunability up to 1100 nm, which constitutes a revolutionary (1-2 orders of magnitude) improvement in the range of tunability over existing semiconductor laser technology utilizing Doped quantum confined host material (DQCH) with characteristic spatial dimension of the confinement tuned to enable the overlap of the discrete levels of the host and impurity ions and efficient energy transfer from the separated host carriers to the impurity, wherein: said DQCH material has the formula TM:MeZ and/or MeX2Z4, wherein Me is selected from the group consisting of Zn, Cd, Ca, Mg, Sr, Ba, Hg, Pb, Cu, Al, Ga, In; Z is selected from the group consisting of S, Se, Te, O, N, P, As, Sb and their mixtures; X being selected from the group consisting of Ga, In, and Al; and TM is selected from the group consisting from V, Cr, Mn, Fe, Co, and Ni.
摘要翻译： 电泵浦的中红外半导体激光器，其在室温下可操作并且具有高达1100nm的可调谐范围，这在现有的半导体激光技术利用掺杂量子化的可调谐性范围内构成了革命性的（1-2个数量级）的改进 被限制的主体材料（DQCH）具有调节的限制的特征空间尺寸，以使得主体和杂质离子的离散水平的重叠以及从分离的主载体到杂质的有效能量转移，其中：所述DQCH材料具有式TM MeZ和/或MeX2Z4，其中Me选自Zn，Cd，Ca，Mg，Sr，Ba，Hg，Pb，Cu，Al，Ga，In; Z选自S，Se，Te，O，N，P，As，Sb及其混合物; X选自Ga，In和Al; TM选自V，Cr，Mn，Fe，Co和Ni组成的组。
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2.发明申请Electrically Pumped Broadly Tunable Mid-Infrared Lasers based on Quantum Confined Transition Metal Doped Semiconductors 有权基于量子限制过渡金属掺杂半导体的电泵浦广泛可调谐中红外激光器公开(公告)号：US20090304034A1
公开(公告)日：2009-12-10
申请号：US12282874
申请日：2007-03-12
CPC分类号： H01S3/06 , H01S3/162 , H01S3/1628 , H01S3/169 , H01S5/3018 , H01S5/3068 , H01S5/327
摘要： Electrically pumped mid-IR semiconductor lasers that are operable at room temperature and possess a range of tunability up to 1100 nm, which constitutes a revolutionary (1-2 orders of magnitude) improvement in the range of tunability over existing semiconductor laser technology utilizing Doped quantum confined host material (DQCH) with characteristic spatial dimension of the confinement tuned to enable the overlap of the discrete levels of the host and impurity ions and efficient energy transfer from the separated host carriers to the impurity, wherein: said DQCH material has the formula TM:MeZ and/or MeX2Z4, wherein Me is selected from the group consisting of Zn, Cd, Ca, Mg, Sr, Ba, Hg, Pb, Cu, Al, Ga, In; Z is selected from the group consisting of S, Se, Te, O, N, P, As, Sb and their mixtures; X being selected from the group consisting of Ga, In, and Al; and TM is selected from the group consisting from V, Cr, Mn, Fe, Co, and Ni.
摘要翻译： 电泵浦的中红外半导体激光器，其在室温下可操作并且具有高达1100nm的可调谐范围，这在现有的半导体激光技术利用掺杂量子化的可调谐性范围内构成了革命性的（1-2个数量级）的改进 被限制的主体材料（DQCH）具有调节的限制的特征空间尺寸，以使得主体和杂质离子的离散水平的重叠以及从分离的主载体到杂质的有效能量转移，其中：所述DQCH材料具有式TM MeZ和/或MeX2Z4，其中Me选自Zn，Cd，Ca，Mg，Sr，Ba，Hg，Pb，Cu，Al，Ga，In; Z选自S，Se，Te，O，N，P，As，Sb及其混合物; X选自Ga，In和Al; TM选自V，Cr，Mn，Fe，Co和Ni组成的组。
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