公开(公告)号：US11749775B2

公开(公告)日：2023-09-05

申请号：US17150634

申请日：2021-01-15

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Eunkyung Lee ,  Jungwoo Kim ,  Byounglyong Choi ,  Heesun Yoon ,  Inoh Hwang

IPC分类号： G01C3/08 ,  H01L31/173 ,  H01L31/0232 ,  G01S7/481 ,  H01S5/183 ,  H01L31/105 ,  H01S5/30 ,  H01S5/34 ,  H01S5/187

CPC分类号： H01L31/173 ,  G01S7/4811 ,  G01S7/4812 ,  H01L31/02327 ,  H01L31/105 ,  H01S5/183 ,  H01S5/187 ,  H01S5/3013 ,  H01S5/3018 ,  H01S5/3402

摘要： A light sensing system includes a plurality of light-emitting devices arranged to have a first optical axis and a plurality of light-receiving devices arranged to have a second optical axis, the second optical axis being parallel with the first optical axis. The plurality of light-emitting devices and the plurality of light-receiving devices are formed to have a monolithically integrated structure, and the first optical axis and the second optical axis are substantially coaxial to each other, thus improving the efficiency of light reception.

公开(公告)号：US20180083064A1

公开(公告)日：2018-03-22

申请号：US15829551

申请日：2017-12-01

申请人： Arizona Board of Regents, Acting for and on Behalf of Arizona State University

发明人： Cun-Zheng Ning ,  Sunay Turkdogan ,  Zhicheng Liu ,  Fan Fan

IPC分类号： H01L27/15 ,  H01L33/00 ,  H01L21/02 ,  H01L33/28 ,  H01S5/30 ,  H01S5/40

CPC分类号： H01L27/15 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02568 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/04 ,  H01L21/225 ,  H01L21/265 ,  H01L27/153 ,  H01L33/005 ,  H01L33/0087 ,  H01L33/0095 ,  H01L33/28 ,  H01S5/3018 ,  H01S5/4093

摘要： Some embodiments include a method. The method can include: providing a carrier substrate; forming a first device material over the carrier substrate; and after forming the first device material over the carrier substrate, transforming the first device material into a second device material. Meanwhile, the transforming the first device material into the second device material can include: causing a cationic exchange in the first device material; and causing an anionic exchange in the first device material. The causing the cationic exchange in the first device material and the causing the anionic exchange in the first device material can occur approximately simultaneously. Other embodiments of related methods and systems are also disclosed.

公开(公告)号：US20130056691A1

公开(公告)日：2013-03-07

申请号：US13660293

申请日：2012-10-25

申请人： Moxtronics, Inc.

发明人： Yungryel Ryu ,  Tae-Seok Lee ,  Henry W. White

IPC分类号： H01B1/08 ,  C01B19/00 ,  C01G9/02

CPC分类号： H01L33/28 ,  C01B19/002 ,  C01B19/007 ,  C01G9/00 ,  C01G11/00 ,  C01G11/006 ,  C30B23/02 ,  C30B25/02 ,  C30B29/16 ,  C30B29/46 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02554 ,  H01L21/0256 ,  H01L21/02565 ,  H01L21/02568 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02617 ,  H01L29/22 ,  H01L29/221 ,  H01S5/0213 ,  H01S5/3018

摘要： Materials and structures for improving the performance of semiconductor devices include ZnBeO alloy materials, ZnCdOSe alloy materials, ZnBeO alloy materials that may contain Mg for lattice matching purposes, and BeO material. The atomic fraction x of Be in the ZnBeO alloy system, namely, Zn1-xBexO, can be varied to increase the energy band gap of ZnO to values larger than that of ZnO. The atomic fraction y of Cd and the atomic fraction z of Se in the ZnCdOSe alloy system, namely, Zn1-yCdyO1-zSez, can be varied to decrease the energy band gap of ZnO to values smaller than that of ZnO. Each alloy formed can be undoped, or p-type or n-type doped, by use of selected dopant elements.

摘要翻译： 用于提高半导体器件性能的材料和结构包括ZnBeO合金材料，ZnCdOSe合金材料，可能含有用于晶格匹配目的的Mg的ZnBeO合金材料和BeO材料。 可以改变ZnBeO合金体系中Be的原子分数x，即Zn1-xBexO，从而将ZnO的能带隙增加到比ZnO大的值。 可以改变ZnCdOSe合金体系中Cd的原子分数y和Se的原子分数z，即Zn1-yCdyO1-zSez，从而将ZnO的能带隙减小到小于ZnO的能带。 通过使用所选择的掺杂元素，形成的每种合金可以是未掺杂的，或者是p型掺杂或n型掺杂的。

公开(公告)号：US20040218651A1

公开(公告)日：2004-11-04

申请号：US10861290

申请日：2004-06-03

申请人： CANON KABUSHIKI KAISHA

发明人： Tatsuya Iwasaki ,  Tohru Den

IPC分类号： H01S003/09 ,  H01S003/08

CPC分类号： H01S3/0959 ,  H01S5/02208 ,  H01S5/0222 ,  H01S5/04 ,  H01S5/105 ,  H01S5/183 ,  H01S5/3018 ,  H01S5/423

摘要： An electron-beam excitation laser has a laser structure with a light emitter and reflectors on one hand and an electron source on the other hand, wherein at least part of the light emitter or reflectors has a multidimensional photonic crystal structure. An electron-beam excitation laser includes an electron source emitting electrons and a laser structure consisting of a light emitter and reflectors, accelerates electrons from the electron source, and irradiates the electrons to the laser structure to emit a laser beam from the laser structure, wherein the reflectors and/or the light emitter in the laser structure are formed with multidimensional photonic crystals in which dielectrics with different dielectric constants are arrayed in a plurality of directions at periodic intervals, and one of the dielectrics with different dielectric constants may be formed with a light-emitting material.

公开(公告)号：US20180329224A1

公开(公告)日：2018-11-15

申请号：US15955852

申请日：2018-04-18

申请人： Japan Display Inc.

发明人： Youichi ASAKAWA ,  Ken ONODA ,  Toshihiko FUKUMA ,  Shinichi KOMURA

IPC分类号： G02B27/48 ,  H01S5/042 ,  H01S5/00 ,  H01S5/40 ,  G02F1/1335

CPC分类号： G02B27/48 ,  G02B6/003 ,  G02B6/0046 ,  G02B6/0053 ,  G02B6/0068 ,  G02F1/133514 ,  G02F1/133621 ,  H01S5/0078 ,  H01S5/0428 ,  H01S5/3013 ,  H01S5/3018 ,  H01S5/32325 ,  H01S5/34333 ,  H01S5/347 ,  H01S5/4012 ,  H01S5/4093 ,  H01S2301/02

摘要： According to one embodiment, a semiconductor laser includes a semiconductor laser element. A drive current which is composed of a direct current and an alternating current superposed thereon is applied to the semiconductor laser element. A waveform of the alternating current is a non-square wave. A frequency of the alternating current is from 50 Hz to 500 kHz.

公开(公告)号：US20140145114A1

公开(公告)日：2014-05-29

申请号：US14130228

申请日：2011-06-28

申请人： Mingjie Zhou ,  Ping Wang ,  Jixing Chen ,  Hui Huang

发明人： Mingjie Zhou ,  Ping Wang ,  Jixing Chen ,  Hui Huang

IPC分类号： H01S5/30 ,  C23C14/35 ,  C23C14/08

CPC分类号： H01S5/3018 ,  C09K11/7718 ,  C09K11/7768 ,  C23C14/081 ,  C23C14/35 ,  H05B33/14

摘要： Cerium doped magnesium barium tungstate luminescent thin film, manufacturing method and application thereof are provided, said method for manufacturing cerium doped magnesium barium tungstate luminescent thin film comprises the following steps: mixing MgO, BaO, WO3 and Ce2O3, sintering for forming sputtering target, forming the precursor of cerium doped magnesium barium tungstate luminescent thin film by magnetron sputtering, annealing the precursor of cerium doped magnesium barium tungstate luminescent thin film, and then forming cerium doped magnesium barium tungstate luminescent thin film. Said cerium doped magnesium barium tungstate luminescent thin film exhibits high luminescence efficiency and high light emitting peaks in red and blue regions. Said method presents the advantages of simplified operation, less cost, and suitable for industrial preparation.

摘要翻译： 提供铈掺杂的钡钡钨酸盐发光薄膜，其制造方法和应用，所述制造铈掺杂的钡钡钨酸盐发光薄膜的方法包括以下步骤：将MgO，BaO，WO 3和Ce 2 O 3混合，烧结以形成溅射靶，形成 通过磁控溅射法铈铈掺杂镁钡钨酸盐发光薄膜的前体，对铈掺杂的钡钡钨酸盐发光薄膜进行退火，然后形成铈掺杂的钡钡钨酸盐发光薄膜。 所述铈掺杂的钡钡钨酸盐发光薄膜在红色和蓝色区域表现出高发光效率和高发光峰。 所述方法具有操作简单，成本低，适用于工业制备的优点。

公开(公告)号：US08284805B2

公开(公告)日：2012-10-09

申请号：US12282874

申请日：2007-03-12

申请人： Sergey B. Mirov ,  Vladimir V. Fedorov ,  Dmitri Martyshkin

发明人： Sergey B. Mirov ,  Vladimir V. Fedorov ,  Dmitri Martyshkin

IPC分类号： H01S3/10

CPC分类号： H01S3/06 ,  H01S3/162 ,  H01S3/1628 ,  H01S3/169 ,  H01S5/3018 ,  H01S5/3068 ,  H01S5/327

摘要： Electrically pumped mid-IR semiconductor lasers that are operable at room temperature and possess a range of tunability up to 1100 nm, which constitutes a revolutionary (1-2 orders of magnitude) improvement in the range of tunability over existing semiconductor laser technology utilizing Doped quantum confined host material (DQCH) with characteristic spatial dimension of the confinement tuned to enable the overlap of the discrete levels of the host and impurity ions and efficient energy transfer from the separated host carriers to the impurity, wherein: said DQCH material has the formula TM:MeZ and/or MeX2Z4, wherein Me is selected from the group consisting of Zn, Cd, Ca, Mg, Sr, Ba, Hg, Pb, Cu, Al, Ga, In; Z is selected from the group consisting of S, Se, Te, O, N, P, As, Sb and their mixtures; X being selected from the group consisting of Ga, In, and Al; and TM is selected from the group consisting from V, Cr, Mn, Fe, Co, and Ni.

摘要翻译： 电泵浦的中红外半导体激光器，其在室温下可操作并且具有高达1100nm的可调谐范围，这在现有的半导体激光技术利用掺杂量子化的可调谐性范围内构成了革命性的（1-2个数量级）的改进 被限制的主体材料（DQCH）具有调节的限制的特征空间尺寸，以使得主体和杂质离子的离散水平的重叠以及从分离的主载体到杂质的有效能量转移，其中：所述DQCH材料具有式TM MeZ和/或MeX2Z4，其中Me选自Zn，Cd，Ca，Mg，Sr，Ba，Hg，Pb，Cu，Al，Ga，In; Z选自S，Se，Te，O，N，P，As，Sb及其混合物; X选自Ga，In和Al; TM选自V，Cr，Mn，Fe，Co和Ni组成的组。

公开(公告)号：US20070036194A1

公开(公告)日：2007-02-15

申请号：US11203734

申请日：2005-08-15

申请人： Sergei Govorkov ,  Luis Spinelli ,  R. Austin

发明人： Sergei Govorkov ,  Luis Spinelli ,  R. Austin

IPC分类号： H01S3/22 ,  H01S3/091 ,  H01S3/09

CPC分类号： H01S5/041 ,  B82Y20/00 ,  H01S5/0222 ,  H01S5/02296 ,  H01S5/024 ,  H01S5/141 ,  H01S5/183 ,  H01S5/3018 ,  H01S5/3045 ,  H01S5/327 ,  H01S5/347

摘要： In an optically pumped semiconductor laser including a semiconductor laser heterostructure, energy of high-energy electrons of an electron beam is converted by excimer formation and dissociation in a gas into ultraviolet (UV) radiation. The ultraviolet radiation is used to optically pump the heterostructure. Materials of the heterostructure may include II-VI compounds, oxides, or diamond. Both surface-emitting and edge-emitting heterostructures may be optically pumped by the UV radiation.

摘要翻译： 在包括半导体激光异质结构的光泵浦半导体激光器中，电子束的高能电子的能量通过准分子的形成和气体中的解离转化成紫外（UV）辐射。 使用紫外线辐射来泵浦异质结构。 异质结构的材料可以包括II-VI化合物，氧化物或金刚石。 表面发射和边缘发射异质结构都可以通过UV辐射被光泵浦。

公开(公告)号：US09270084B2

公开(公告)日：2016-02-23

申请号：US14130228

申请日：2011-06-28

申请人： Mingjie Zhou ,  Ping Wang ,  Jixing Chen ,  Hui Huang

发明人： Mingjie Zhou ,  Ping Wang ,  Jixing Chen ,  Hui Huang

IPC分类号： C09K11/77 ,  C23C14/34 ,  H01J37/34 ,  H01S5/30 ,  C23C14/08 ,  C23C14/35 ,  H05B33/14

CPC分类号： H01S5/3018 ,  C09K11/7718 ,  C09K11/7768 ,  C23C14/081 ,  C23C14/35 ,  H05B33/14

摘要： Cerium doped magnesium barium tungstate luminescent thin film, manufacturing method and application thereof are provided, said method for manufacturing cerium doped magnesium barium tungstate luminescent thin film comprises the following steps: mixing MgO, BaO, WO3 and Ce2O3, sintering for forming sputtering target, forming the precursor of cerium doped magnesium barium tungstate luminescent thin film by magnetron sputtering, annealing the precursor of cerium doped magnesium barium tungstate luminescent thin film, and then forming cerium doped magnesium barium tungstate luminescent thin film. Said cerium doped magnesium barium tungstate luminescent thin film exhibits high luminescence efficiency and high light emitting peaks in red and blue regions. Said method presents the advantages of simplified operation, less cost, and suitable for industrial preparation.

摘要翻译： 提供铈掺杂的钡钡钨酸盐发光薄膜，其制造方法和应用，所述制造铈掺杂的钡钡钨酸盐发光薄膜的方法包括以下步骤：将MgO，BaO，WO 3和Ce 2 O 3混合，烧结以形成溅射靶，形成 通过磁控溅射法铈铈掺杂镁钡钨酸盐发光薄膜的前体，对铈掺杂的钡钡钨酸盐发光薄膜进行退火，然后形成铈掺杂的钡钡钨酸盐发光薄膜。 所述铈掺杂的钡钡钨酸盐发光薄膜在红色和蓝色区域表现出高发光效率和高发光峰。 所述方法具有操作简单，成本低，适用于工业制备的优点。

公开(公告)号：US20060255351A1

公开(公告)日：2006-11-16

申请号：US11394382

申请日：2006-03-29

申请人： Yungryel Ryu ,  Tae-Seok Lee ,  Henry White

发明人： Yungryel Ryu ,  Tae-Seok Lee ,  Henry White

IPC分类号： H01L33/00

CPC分类号： H01L33/28 ,  C01B19/002 ,  C01B19/007 ,  C01G9/00 ,  C01G11/00 ,  C01G11/006 ,  C30B23/02 ,  C30B25/02 ,  C30B29/16 ,  C30B29/46 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02554 ,  H01L21/0256 ,  H01L21/02565 ,  H01L21/02568 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02617 ,  H01L29/22 ,  H01L29/221 ,  H01S5/0213 ,  H01S5/3018

摘要： Materials and structures for improving the performance of semiconductor devices include ZnBeO alloy materials, ZnCdOSe alloy materials, ZnBeO alloy materials that may contain Mg for lattice matching purposes, and BeO material. The atomic fraction x of Be in the ZnBeO alloy system, namely, Zn1-xBexO, can be varied to increase the energy band gap of ZnO to values larger than that of ZnO. The atomic fraction y of Cd and the atomic fraction z of Se in the ZnCdOSe alloy system, namely, Zn1-yCdyO1-zSez, can be varied to decrease the energy band gap of ZnO to values smaller than that of ZnO. Each alloy formed can be undoped, or p-type or n-type doped, by use of selected dopant elements. These alloys can be used alone or in combination to form active photonic layers that can emit over a range of wavelength values, heterostructures such as single and multiple quantum wells and superlattice layers or cladding layers, and to fabricate optical and electronic semiconductor devices. These structures can be applied to improve the function, capability, and performance of semiconductor devices.

摘要翻译： 用于提高半导体器件性能的材料和结构包括ZnBeO合金材料，ZnCdOSe合金材料，可能含有用于晶格匹配目的的Mg的ZnBeO合金材料和BeO材料。 可以改变ZnBeO合金体系中Be的原子分数x，即Zn 1-x O x O x，以使ZnO的能带隙增加到更大的值 比ZnO的。 ZnCdOSe合金系统中Cd的原子分数y和Se的原子分数z，即Zn 1-y O y O 1-z z， 可以改变ZnO以将ZnO的能带隙减小到小于ZnO的能带的值。 通过使用所选择的掺杂元素，形成的每种合金可以是未掺杂的，或者是p型掺杂或n型掺杂的。 这些合金可以单独使用或组合使用以形成能够在波长范围内发射的有源光子层，诸如单个和多个量子阱以及超晶格层或覆层的异质结构，以及制造光学和电子半导体器件。 这些结构可用于提高半导体器件的功能，性能和性能。