公开(公告)号：US20120178262A1

公开(公告)日：2012-07-12

申请号：US13496498

申请日：2010-09-15

申请人： Marcello Riva ,  Elena Lopez Alonso ,  Dorit Linaschke ,  Ines Dani ,  Stefan Kaskel

发明人： Marcello Riva ,  Elena Lopez Alonso ,  Dorit Linaschke ,  Ines Dani ,  Stefan Kaskel

IPC分类号： H01L21/3065

CPC分类号： H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： Solar cells are manufactured from P-type doped monocrystalline or polycrystalline silicon ingots by sawing wafers and applying an N-type doping. The wafers can be treated by etching them, in a plasma assisted process, with an etching gas containing or consisting of carbonyl fluoride. Hereby, the surface is roughened so that the degree of light reflection is reduced, or glass-like phosphorus-containing oxide coatings caused by phosphorus doping are removed. Carbonyl fluoride is also very suitable to selectively etch silicon oxide in silicon oxide/silicon composites.

摘要翻译： 太阳能电池由P型掺杂的单晶硅或多晶硅锭通过锯切晶片制造并施加N型掺杂。 可以在等离子体辅助工艺中用含有或由碳酰氟组成的蚀刻气体蚀刻晶片来处理晶片。 由此，表面被粗糙化，使得光反射的程度降低，或者去除由磷掺杂引起的玻璃状含磷氧化物涂层。 羰基氟化物也非常适合于在氧化硅/硅复合材料中选择性地蚀刻氧化硅。