公开(公告)号：US20120178262A1

公开(公告)日：2012-07-12

申请号：US13496498

申请日：2010-09-15

申请人： Marcello Riva ,  Elena Lopez Alonso ,  Dorit Linaschke ,  Ines Dani ,  Stefan Kaskel

发明人： Marcello Riva ,  Elena Lopez Alonso ,  Dorit Linaschke ,  Ines Dani ,  Stefan Kaskel

IPC分类号： H01L21/3065

CPC分类号： H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： Solar cells are manufactured from P-type doped monocrystalline or polycrystalline silicon ingots by sawing wafers and applying an N-type doping. The wafers can be treated by etching them, in a plasma assisted process, with an etching gas containing or consisting of carbonyl fluoride. Hereby, the surface is roughened so that the degree of light reflection is reduced, or glass-like phosphorus-containing oxide coatings caused by phosphorus doping are removed. Carbonyl fluoride is also very suitable to selectively etch silicon oxide in silicon oxide/silicon composites.

摘要翻译： 太阳能电池由P型掺杂的单晶硅或多晶硅锭通过锯切晶片制造并施加N型掺杂。 可以在等离子体辅助工艺中用含有或由碳酰氟组成的蚀刻气体蚀刻晶片来处理晶片。 由此，表面被粗糙化，使得光反射的程度降低，或者去除由磷掺杂引起的玻璃状含磷氧化物涂层。 羰基氟化物也非常适合于在氧化硅/硅复合材料中选择性地蚀刻氧化硅。

公开(公告)号：US20080305643A1

公开(公告)日：2008-12-11

申请号：US11917679

申请日：2006-06-14

申请人： Moritz Heintze ,  Rainer Moeller ,  Harald Wanka ,  Elena Lopez ,  Volkmar Hopfe ,  Ines Dani ,  Milan Rosina

发明人： Moritz Heintze ,  Rainer Moeller ,  Harald Wanka ,  Elena Lopez ,  Volkmar Hopfe ,  Ines Dani ,  Milan Rosina

IPC分类号： H01L21/3065

CPC分类号： H01L31/1804 ,  H01L21/3065 ,  H01L27/142 ,  Y02E10/547 ,  Y02P70/521

摘要： The invention relates to a method for the one-sided removal of a doped surface layer on rear sides of crystalline silicon solar wafers. In accordance with the object set, doped surface layers should be able to be removed from rear sides of such solar wafers in a cost-effective manner and with a handling which is gentle on the substrate. In addition, the front side should not be modified. In accordance with the invention, an etching gas is directed onto the rear side surface of silicon solar wafers with a plasma atmospheric pressure.

摘要翻译： 本发明涉及一种用于单面去除晶体硅太阳能晶片后侧上的掺杂表面层的方法。 根据目标集，掺杂的表面层应能够以成本有效的方式从这种太阳能晶片的后侧移除，并且在衬底上具有温和的处理。 另外，前面不应该修改。 根据本发明，蚀刻气体以等离子体大气压被引导到硅太阳能晶片的后侧表面上。

公开(公告)号：US08728576B2

公开(公告)日：2014-05-20

申请号：US13121785

申请日：2009-10-09

申请人： Thomas Abendroth ,  Holger Althues ,  Stefan Kaskel ,  Ines Dani

发明人： Thomas Abendroth ,  Holger Althues ,  Stefan Kaskel ,  Ines Dani

IPC分类号： C23C16/02 ,  C23C16/40

CPC分类号： C23C16/405 ,  C23C16/455 ,  C23C16/45504 ,  C23C16/45514 ,  C23C16/45574

摘要： A method for manufacturing photocatalytically active titanium dioxide layers on substrate surfaces. The method reduces the effort for the manufacture of photocatalytically active titanium dioxide layers and increases the choice for the coating of suitable substrate materials. In the method, a titanium compound present in the gas phase and water vapor are directed to a preheated substrate by means of gas phase hydrolysis and a titanium dioxide layer is foamed on the surface of the substrate by chemical reaction. In this respect, the titanium compound and water vapor are supplied separately from one another so that a flow speed of at least 0.5 m/s is achieved and the time between the first contact of the two gases up to the impact on the surface of the substrate is kept lower than 0.05 s, and in this process the photocatalytically active titanium dioxide layer is formed on the substrate surface.

摘要翻译： 一种在基材表面上制备光催化活性二氧化钛层的方法。 该方法减少了制备光催化活性二氧化钛层的努力，并且增加了合适的基材的涂层选择。 在该方法中，通过气相水解将存在于气相中的钛化合物和水蒸汽通过气相水解导向预热的基板，并且通过化学反应在基板的表面上发泡二氧化钛层。 在这方面，钛化合物和水蒸气彼此分开供应，使得达到至少0.5m / s的流速，并且两种气体的第一次接触之间的时间直到对表面的冲击 基板保持低于0.05s，在该工艺中，在基板表面上形成光催化活性的二氧化钛层。

公开(公告)号：US08211323B2

公开(公告)日：2012-07-03

申请号：US11917679

申请日：2006-06-14

申请人： Moritz Heintze ,  Rainer Moeller ,  Harald Wanka ,  Elena Lopez ,  Volkmar Hopfe ,  Ines Dani ,  Milan Rosina

发明人： Moritz Heintze ,  Rainer Moeller ,  Harald Wanka ,  Elena Lopez ,  Volkmar Hopfe ,  Ines Dani ,  Milan Rosina

IPC分类号： B44C1/22 ,  H01L21/302

CPC分类号： H01L31/1804 ,  H01L21/3065 ,  H01L27/142 ,  Y02E10/547 ,  Y02P70/521

摘要： The invention relates to a method for the one-sided removal of a doped surface layer on rear sides of crystalline silicon solar wafers. In accordance with the object set, doped surface layers should be able to be removed from rear sides of such solar wafers in a cost-effective manner and with a handling which is gentle on the substrate. In addition, the front side should not be modified. In accordance with the invention, an etching gas is directed onto the rear side surface of silicon solar wafers with a plasma atmospheric pressure.

摘要翻译： 本发明涉及一种用于单面去除晶体硅太阳能晶片后侧上的掺杂表面层的方法。 根据目标集，掺杂的表面层应能够以成本有效的方式从这种太阳能晶片的后侧移除，并且在衬底上具有温和的处理。 另外，前面不应该修改。 根据本发明，蚀刻气体以等离子体大气压被引导到硅太阳能晶片的后侧表面上。

公开(公告)号：US20110244130A1

公开(公告)日：2011-10-06

申请号：US13121785

申请日：2009-10-09

申请人： Thomas Abendroth ,  Holger Althues ,  Stefan Kaskel ,  Ines Dani

发明人： Thomas Abendroth ,  Holger Althues ,  Stefan Kaskel ,  Ines Dani

IPC分类号： C23C16/40 ,  C23C16/44 ,  C23C16/02

CPC分类号： C23C16/405 ,  C23C16/455 ,  C23C16/45504 ,  C23C16/45514 ,  C23C16/45574

摘要： A method for manufacturing photocatalytically active titanium dioxide layers on substrate surfaces. The method reduces the effort for the manufacture of photocatalytically active titanium dioxide layers and increases the choice for the coating of suitable substrate materials. In the method, a titanium compound present in the gas phase and water vapor are directed to a preheated substrate by means of gas phase hydrolysis and a titanium dioxide layer is formed on the surface of the substrate by chemical reaction. In this respect, the titanium compound and water vapor are supplied separately from one another so that a flow speed of at least 0.5 m/s is achieved and the time between the first contact of the two gases up to the impact on the surface of the substrate is kept lower than 0.05 s, and in this process the photocatalytically active titanium dioxide layer is formed on the substrate surface.

摘要翻译： 一种在基材表面上制备光催化活性二氧化钛层的方法。 该方法减少了制备光催化活性二氧化钛层的努力，并且增加了合适的基材的涂层选择。 在该方法中，通过气相水解将存在于气相中的钛化合物和水蒸汽通过气相水解导向预热的基板，并且通过化学反应在基板的表面上形成二氧化钛层。 在这方面，钛化合物和水蒸气彼此分开供应，使得达到至少0.5m / s的流速，并且两种气体的第一次接触之间的时间直到对表面的冲击 基板保持低于0.05s，在该工艺中，在基板表面上形成光催化活性的二氧化钛层。

公开(公告)号：US20110108539A1

公开(公告)日：2011-05-12

申请号：US12934097

申请日：2009-04-07

申请人： Patrick Grabau ,  Julius Roch ,  Volkmar Hopfe ,  Ines Dani

发明人： Patrick Grabau ,  Julius Roch ,  Volkmar Hopfe ,  Ines Dani

IPC分类号： F23Q7/00

CPC分类号： H05H1/2406 ,  H05H2001/2412 ,  H05H2001/3426

摘要： A method and an apparatus relate to an ignition an arc between an anode and a cathode of a plasma source which can be used for a substrate surface modification at environmental atmosphere conditions. The cathode is arranged at a spacing from the anode. This method and the apparatus may reduce the effort for the ignition of an arc of a plasma source and to make the ignition process safer. The method is such that a barrier discharge is ignited with a supplied gas by means of two electrodes which are arranged parallel to the longitudinal axis between the anode and the cathode and are connected to a high-voltage generator and are supplied with a radio frequency electric AC voltage on the ignition. When an electric DC voltage is applied to the anode and to the cathode, an arc can thereby be ignited by means of the charge carriers present between the anode and the cathode due to the barrier discharge.

摘要翻译： 一种方法和装置涉及在环境气氛条件下可用于衬底表面改性的等离子体源的阳极和阴极之间的点火电弧。 阴极与阳极间隔设置。 该方法和装置可以减少等离子体源的电弧点火的努力，并使点火过程更安全。 该方法是借助于与阳极和阴极之间的纵向轴线平行设置并且连接到高压发生器并且被提供有射频电力的两个电极而用供应的气体点燃阻挡放电 交流电压点火。 当将直流电压施加到阳极和阴极时，由于阻挡放电，因此可以通过存在于阳极和阴极之间的电荷载体来点燃电弧。

公开(公告)号：US07525664B2

公开(公告)日：2009-04-28

申请号：US11628283

申请日：2005-05-27

申请人： Ines Dani ,  Wulf Grählert ,  Volkmar Hopfe ,  Gerrit Mäder

发明人： Ines Dani ,  Wulf Grählert ,  Volkmar Hopfe ,  Gerrit Mäder

IPC分类号： G01N21/00

CPC分类号： G01N21/3504 ,  G01N21/15 ,  G01N21/59 ,  G01N21/85

摘要： The invention relates to a device and a method for the optical detection of substances contained in exhaust gases of chemical processes, wherein exhaust gases are conducted all the way through a channel element that forms an optical measuring section; at the channel element there are two flanges, closed off to the ambient area, and at least one window element through which electromagnetic radiation for the optical detection can be directed from a radiation source to a optical detector through the channel element; a purge gas is fed through the flanges into the channel element, whereby with a purge gas led into one of the flanges a closed laminar purge gas flow is to be formed in the bottom area of the interior of the channel element.

摘要翻译： 本发明涉及一种用于光学检测化学过程废气中所含物质的装置和方法，其中废气一直通过形成光学测量部分的通道元件; 在通道元件处有两个法兰，封闭到环境区域，以及至少一个窗口元件，用于光学检测的电磁辐射可以通过该窗口元件从辐射源通过通道元件引导到光学检测器; 吹扫气体通过凸缘进入通道元件，由此通过引入到凸缘中的一个的吹扫气体，将在通道元件内部的底部区域中形成封闭的层状吹扫气体流。

公开(公告)号：US20080011049A1

公开(公告)日：2008-01-17

申请号：US11628283

申请日：2005-05-27

申请人： Ines Dani ,  Wulf Grahlert ,  Volkmar Hopfe ,  Gerrit Mader

发明人： Ines Dani ,  Wulf Grahlert ,  Volkmar Hopfe ,  Gerrit Mader

IPC分类号： G01N21/85

CPC分类号： G01N21/3504 ,  G01N21/15 ,  G01N21/59 ,  G01N21/85

摘要： The invention relates to a device and a method for the optical detection of substances contained in exhaust gases of chemical processes, wherein exhaust gases are conducted all the way through a channel element that forms an optical measuring section; at the channel element there are two flanges, closed off to the ambient area, and at least one window element through which electromagnetic radiation for the optical detection can be directed from a radiation source to a optical detector through the channel element; a purge gas is fed through the flanges into the channel element, whereby with a purge gas led into one of the flanges a closed laminar purge gas flow is to be formed in the bottom area of the interior of the channel element.

摘要翻译： 本发明涉及一种用于光学检测化学过程废气中所含物质的装置和方法，其中废气一直通过形成光学测量部分的通道元件; 在通道元件处有两个法兰，封闭到环境区域，以及至少一个窗口元件，用于光学检测的电磁辐射可以通过该窗口元件从辐射源通过通道元件引导到光学检测器; 吹扫气体通过凸缘进入通道元件，由此通过引入到凸缘中的一个的吹扫气体，将在通道元件内部的底部区域中形成封闭的层状吹扫气体流。

公开(公告)号：US20100233385A1

公开(公告)日：2010-09-16

申请号：US12377658

申请日：2007-08-29

申请人： Birte Dresler ,  Volkmar Hopfe ,  Ines Dani

发明人： Birte Dresler ,  Volkmar Hopfe ,  Ines Dani

IPC分类号： C23C16/48 ,  C23C16/00

CPC分类号： C23C16/452 ,  C23C16/45519 ,  C23C16/45595 ,  C23C16/48 ,  C23C16/545

摘要： The invention relates to an apparatus and to a method of forming thin films on substrate surfaces. It is the object of the invention to provide possibilities with which thin layers can be manufactured on substrate surfaces which have a specific layer material formation with desired properties. The apparatus in accordance with the invention is made such that a feed is present for at least one gaseous precursor, which contributes to the layer formation, at a reaction chamber region above a substrate surface to be coated. A source which is a plasma source and which emits electromagnetic radiation is moreover arranged such that a photolytic activation of atoms and/or molecules of the precursor(s) takes place with the emitted electromagnetic radiation. In this respect, the plasma source should be arranged and should also be operated such that no direct influence of the plasma on the substrate surface and on the precursors resulting in the layer formation takes place.

摘要翻译： 本发明涉及在衬底表面上形成薄膜的装置和方法。 本发明的目的是提供可以在具有所需性质的特定层材料形成的衬底表面上制造薄层的可能性。 根据本发明的装置被制成使得在待涂覆的基底表面上方的反应室区域处存在用于至少一种有助于层形成的气态前体的进料。 作为等离子体源并且发射电磁辐射的源被布置成使得发射的电磁辐射发生前体的原子和/或分子的光解活化。 在这方面，应该布置等离子体源，并且还应该进行操作，使得不会发生等离子体对衬底表面和前体的直接影响，导致形成层。

公开(公告)号：US20100062608A1

公开(公告)日：2010-03-11

申请号：US12310441

申请日：2007-08-29

申请人： Volkmar Hopfe ,  Ines Dani ,  Elena Lopez ,  Rainer Moeller ,  Moritz Heintze

发明人： Volkmar Hopfe ,  Ines Dani ,  Elena Lopez ,  Rainer Moeller ,  Moritz Heintze

IPC分类号： H01L21/3065

CPC分类号： H01L21/31116

摘要： The invention relates to a method for the selective plasmochemical dry-etching of phosphosilicate glass ((SiO2)xP2O5)y) formed on surfaces of silicon wafers. In this respect, it is the object of the invention to provide a cost-effective, efficient, selective possibility which at least reduces manufacturing losses and with which phosphosilicate glass can be removed from silicon wafers. A procedure is followed in the invention that crystalline silicon wafers, whose surface is provided with phosphosilicate glass, are etched in a selective plasmochemical process. In this connection, a plasma formed using a plasma source and an etching gas are directed at atmospheric pressure to the phosphosilicate glass which can thus be removed.

摘要翻译： 本发明涉及用于在硅晶片表面上形成的磷硅玻璃（（SiO 2）xP 2 O 5）y）的选择性等离子体化学干蚀刻的方法。 在这方面，本发明的目的是提供一种成本有效，有效，可选择的可能性，其至少可以降低制造损耗，并且可以从硅晶片去除磷硅玻璃。 在本发明中遵循的步骤是，在选择性等离子体化学方法中蚀刻其表面设有磷硅玻璃的晶体硅晶片。 在这方面，使用等离子体源和蚀刻气体形成的等离子体在大气压下被引导到可以被去除的磷硅玻璃上。