公开(公告)号：US20090217875A1

公开(公告)日：2009-09-03

申请号：US12395763

申请日：2009-03-02

申请人： Waltraud Dietl ,  Patrick Schmid ,  Eddy Jager

发明人： Waltraud Dietl ,  Patrick Schmid ,  Eddy Jager

IPC分类号： B05C9/14

CPC分类号： H01L21/67115 ,  H01L21/67017

摘要： The application relates to an apparatus for the heat treatment of disc shaped substrates, in particular semi-conductor wafers. The apparatus has at least one radiation source and a treatment chamber accommodating the substrate having an upper wall element and a lower wall element, at least one of the wall elements lying adjacent to the at least one radiation source and being substantially transparent for the radiation from the radiation source. Furthermore, the apparatus makes provision for at least a first gas inlet apparatus. The first gas inlet apparatus has a plate element which is disposed within the treatment chamber between the substrate and the upper wall element, a collar ring disposed between the plate element and the upper wall element, and a first gas conveyance duct extending at least partially within the treatment chamber. The plate element has a larger diameter than the substrate and in a hole region approximately corresponding to the diameter of the substrate a plurality of through holes. The collar ring surrounds the hole region and has at least one inlet opening. The first gas conveyance duct has an outlet which is aligned with the inlet opening of the collar ring, a gas flow flowing out of the outlet having a main flow direction which is directed past a centre point of the collar ring.

摘要翻译： 本申请涉及用于盘形基底，特别是半导体晶片的热处理的装置。 该装置具有至少一个辐射源和处理室，其容纳具有上壁元件和下壁元件的基底，所述壁元件中的至少一个与所述至少一个辐射源相邻并且对于辐射来说基本上是透明的 辐射源。 此外，该装置至少设置有第一气体入口装置。 第一气体入口装置具有设置在基板和上壁元件之间的处理室内的板元件，设置在板元件和上壁元件之间的套环，以及至少部分地延伸到第一气体输送管道 治疗室。 板元件具有比基板更大的直径，并且在大致对应于基板的直径的孔区域中具有多个通孔。 轴环围绕孔区域并且具有至少一个入口开口。 第一气体输送管道具有与套环的入口开口对准的出口，从出口流出的气流具有被引导通过套环的中心点的主流动方向。

公开(公告)号：US09111970B2

公开(公告)日：2015-08-18

申请号：US12395763

申请日：2009-03-02

申请人： Waltraud Dietl ,  Patrick Schmid ,  Eddy Jager

发明人： Waltraud Dietl ,  Patrick Schmid ,  Eddy Jager

IPC分类号： B05C9/14 ,  H01L21/67

CPC分类号： H01L21/67115 ,  H01L21/67017

摘要： The application relates to an apparatus for the heat treatment of disc shaped substrates, in particular semi-conductor wafers. The apparatus has at least one radiation source and a treatment chamber accommodating the substrate having an upper wall element and a lower wall element, at least one of the wall elements lying adjacent to the at least one radiation source and being substantially transparent for the radiation from the radiation source. Furthermore, the apparatus makes provision for at least a first gas inlet apparatus. The first gas inlet apparatus has a plate element which is disposed within the treatment chamber between the substrate and the upper wall element, a collar ring disposed between the plate element and the upper wall element, and a first gas conveyance duct extending at least partially within the treatment chamber. The plate element has a larger diameter than the substrate and in a hole region approximately corresponding to the diameter of the substrate a plurality of through holes. The collar ring surrounds the hole region and has at least one inlet opening. The first gas conveyance duct has an outlet which is aligned with the inlet opening of the collar ring, a gas flow flowing out of the outlet having a main flow direction which is directed past a centre point of the collar ring.

摘要翻译： 本申请涉及用于盘形基底，特别是半导体晶片的热处理的装置。 该装置具有至少一个辐射源和处理室，其容纳具有上壁元件和下壁元件的基底，所述壁元件中的至少一个与所述至少一个辐射源相邻并且对于辐射来说基本上是透明的 辐射源。 此外，该装置至少设置有第一气体入口装置。 第一气体入口装置具有设置在基板和上壁元件之间的处理室内的板元件，设置在板元件和上壁元件之间的套环，以及至少部分地延伸到第一气体输送管道 治疗室。 板元件具有比基板更大的直径，并且在大致对应于基板的直径的孔区域中具有多个通孔。 轴环围绕孔区域并且具有至少一个入口开口。 第一气体输送管道具有与套环的入口开口对准的出口，从出口流出的气流具有被引导通过套环的中心点的主流动方向。