公开(公告)号：US06420252B1

公开(公告)日：2002-07-16

申请号：US09568065

申请日：2000-05-10

申请人： Stephen Schwed ,  Louis A. Koszi ,  Edward W. Douglas ,  Michael G. Brown

发明人： Stephen Schwed ,  Louis A. Koszi ,  Edward W. Douglas ,  Michael G. Brown

IPC分类号： H01L2144

CPC分类号： H01L21/76852 ,  H01L21/0272 ,  H01L21/31144 ,  H01L21/76841 ,  H01L21/76897

摘要： A method of forming a self-aligned contact on a semiconductor includes forming a layer of a dielectric material over a semiconductor, providing a photoresist layer over the dielectric layer and then exposing the photoresist layer with a desired pattern and developing an opening in the photoresist layer. The dielectric material exposed through the photoresist layer opening is then removed to form a contact opening extending through the dielectric material to the semiconductor. The photoresist layer is then eroded so as to enlarge the size of the opening in the photoresist layer, whereby the dielectric material adjacent the contact opening is exposed through the enlarged opening of the photoresist layer. A barrier metal is then deposited in the enlarged opening of the photoresist layer and in the contact opening of the dielectric material, whereby the barrier metal overlies the exposed portion of the dielectric material. A conductive metal is then deposited atop the barrier metal. The barrier metal isolates the contact metal from the semiconductor, thereby preventing interaction or intermixing of the contact metal and the semiconductor.

摘要翻译： 在半导体上形成自对准接触的方法包括在半导体上形成介电材料层，在介电层上提供光致抗蚀剂层，然后以期望的图案曝光光致抗蚀剂层，并在光刻胶层中显影出一个开口 。 然后去除通过光致抗蚀剂层开口暴露的电介质材料以形成延伸穿过介电材料到半导体的接触开口。 然后蚀刻光致抗蚀剂层以扩大光致抗蚀剂层中的开口的尺寸，由此邻近接触开口的电介质材料通过光致抗蚀剂层的扩大的开口暴露。 然后在光致抗蚀剂层的扩大开口中和介电材料的接触开口中沉积阻挡金属，由此阻挡金属覆盖在电介质材料的暴露部分上。 然后在阻挡金属顶上沉积导电金属。 阻挡金属将接触金属与半导体隔离，从而防止接触金属和半导体的相互作用或混合。

公开(公告)号：US06580139B1

公开(公告)日：2003-06-17

申请号：US09664187

申请日：2000-09-18

申请人： Stephen Schwed ,  Edward W. Douglas ,  Christopher Palmer

发明人： Stephen Schwed ,  Edward W. Douglas ,  Christopher Palmer

IPC分类号： H01L2976

CPC分类号： H01L29/66318

摘要： A monolithically integrated, compound semiconductor sensing device and a method of making the device is provided. The device includes an signal conditioning circuit formed on a substrate surface. A sensor including one or more compound semiconductors is deposited on a second portion of the substrate surface. The signal conditioning circuit has a well formed therein for exposing the substrate surface and the sensor is deposited within the well.

摘要翻译： 提供了单片集成化合物半导体感测装置和制造该装置的方法。 该器件包括形成在衬底表面上的信号调理电路。 包含一个或多个化合物半导体的传感器沉积在衬底表面的第二部分上。 信号调节电路在其中良好地形成用于暴露衬底表面，并且传感器沉积在阱内。

公开(公告)号：US06579741B2

公开(公告)日：2003-06-17

申请号：US10243107

申请日：2002-09-13

申请人： Stephen Schwed ,  Edward W. Douglas ,  Christopher Palmer

发明人： Stephen Schwed ,  Edward W. Douglas ,  Christopher Palmer

IPC分类号： H01L2100

CPC分类号： H01L29/66318

摘要： A method of manufacturing a monolithic compound semiconductor sensing device includes epitaxially depositing a signal conditioning epitaxy on a substrate surface, providing a well in the signal conditioning circuit and exposing the substrate surface, and epitaxially depositing a sensor within the well.

摘要翻译： 制造单片化合物半导体感测装置的方法包括在衬底表面上外延沉积信号调理外延，在信号调理电路中提供阱并暴露衬底表面，以及在阱内外延沉积传感器。