公开(公告)号：US20080066864A1

公开(公告)日：2008-03-20

申请号：US11946370

申请日：2007-11-28

申请人： Arne Ballantine ,  Scott Estes ,  Emily Fisch ,  Gary Milo ,  Ronald Warren

发明人： Arne Ballantine ,  Scott Estes ,  Emily Fisch ,  Gary Milo ,  Ronald Warren

IPC分类号： H01L21/306

CPC分类号： H01L21/67086 ,  H01L21/31111 ,  H01L21/32134 ,  Y10S134/902

摘要： An etch apparatus. The etch apparatus includes a tank coupled to a recirculating path that includes a dissolver. The dissolver includes a porous carbon matrix filter coated with silicon nitride. An etchant from the tank circulates through the recirculating path and performs a selective etching of a structure in the tank in contact with the etchant. The structure includes silicon nitride on a pad layer that includes silicon dioxide. The selective etching is characterized by the silicon nitride on the pad layer being selectively etched by the etchant relative to an etching by the etchant of the silicon dioxide. The etch apparatus further includes: means for dissolving the silicon nitride coated on the filter into the etchant at a controlled dissolution rate sufficient to cause the selective etching; and means for coating the silicon nitride onto the filter to facilitate the selective etching.

摘要翻译： 蚀刻装置。 蚀刻装置包括耦合到包括溶解器的再循环路径的罐。 溶解器包括涂覆有氮化硅的多孔碳基质过滤器。 来自罐的蚀刻剂循环通过再循环路径，并执行对与蚀刻剂接触的罐中的结构的选择性蚀刻。 该结构包括在包括二氧化硅的焊盘层上的氮化硅。 选择性蚀刻的特征在于衬底层上的氮化硅相对于通过二氧化硅蚀刻剂的蚀刻被蚀刻剂选择性地蚀刻。 所述蚀刻装置还包括：以可控溶解速率将涂覆在所述过滤器上的所述氮化硅溶解到蚀刻剂中的装置，所述溶解速率足以引起所述选择性蚀刻; 以及用于将氮化硅涂覆到过滤器上以促进选择性蚀刻的装置。