公开(公告)号：US08061185B2

公开(公告)日：2011-11-22

申请号：US12091693

申请日：2005-10-25

申请人： Philippe Monnoyer ,  Janos Farkas ,  Farid Sebaai

发明人： Philippe Monnoyer ,  Janos Farkas ,  Farid Sebaai

IPC分类号： G01N29/04 ,  G01N29/28

CPC分类号： C09G1/02 ,  G01N15/04 ,  G01N29/032 ,  G01N2291/02416

摘要： A method for forming a semiconductor device, the method includes providing a semiconductor substrate, applying a slurry to the semiconductor substrate, wherein the slurry was tested using a testing method includes taking a first undiluted sample from a top of the slurry; determining a first particle size distribution characteristic of the first undiluted sample; taking a second undiluted sample from a bottom of the slurry; determining a second particle size distribution characteristic of the second undiluted sample; and comparing a difference between the first particle size distribution characteristic and the second particle size distribution characteristics with a first predetermined value.

摘要翻译： 一种形成半导体器件的方法，所述方法包括提供半导体衬底，向半导体衬底施加浆料，其中使用测试方法测试所述浆料，包括从所述浆料的顶部取出第一未稀释的样品; 确定第一未稀释样品的第一粒度分布特性; 从浆料的底部取出第二个未稀释的样品; 确定第二未稀释样品的第二粒度分布特征; 以及将第一粒度分布特性和第二粒度分布特性之间的差与第一预定值进行比较。

公开(公告)号：US20080282778A1

公开(公告)日：2008-11-20

申请号：US12091693

申请日：2005-10-25

申请人： Philippe Monnoyer ,  Janos Farkas ,  Farid Sebaai

发明人： Philippe Monnoyer ,  Janos Farkas ,  Farid Sebaai

IPC分类号： G01N11/00

CPC分类号： C09G1/02 ,  G01N15/04 ,  G01N29/032 ,  G01N2291/02416

摘要： A method for forming a semiconductor device, the method includes providing a semiconductor substrate, applying a slurry to the semiconductor substrate, wherein the slurry was tested using a testing method includes taking a first undiluted sample from a top of the slurry; determining a first particle size distribution characteristic of the first undiluted sample; taking a second undiluted sample from a bottom of the slurry; determining a second particle size distribution characteristic of the second undiluted sample; and comparing a difference between the first particle size distribution characteristic and the second particle size distribution characteristics with a first predetermined value.

摘要翻译： 一种形成半导体器件的方法，所述方法包括提供半导体衬底，向半导体衬底施加浆料，其中使用测试方法测试所述浆料，包括从所述浆料的顶部取出第一未稀释的样品; 确定第一未稀释样品的第一粒度分布特性; 从浆料的底部取出第二个未稀释的样品; 确定第二未稀释样品的第二粒度分布特征; 以及将第一粒度分布特性和第二粒度分布特性之间的差与第一预定值进行比较。