公开(公告)号：US08293639B2

公开(公告)日：2012-10-23

申请号：US12371809

申请日：2009-02-16

申请人： Feng-Yih Chang ,  Pei-Yu Chou ,  Jiunn-Hsiung Liao ,  Chih-Wen Feng ,  Ying-Chih Lin

发明人： Feng-Yih Chang ,  Pei-Yu Chou ,  Jiunn-Hsiung Liao ,  Chih-Wen Feng ,  Ying-Chih Lin

IPC分类号： H01L21/4763

CPC分类号： H01L21/76804 ,  H01L21/31144 ,  H01L21/76895

摘要： A method for controlling an ADI-AEI CD difference ratio of openings having different sizes is described. The openings are formed through a silicon-containing material layer, an etching resistive layer and a target material layer in turn. Before the opening etching steps, at least one of the opening patterns in the photoresist mask is altered in size through photoresist trimming or deposition of a substantially conformal polymer layer. A first etching step forming thicker polymer on the sidewall of the wider opening pattern is performed to form a patterned Si-containing material layer. A second etching step is performed to remove exposed portions of the etching resistive layer and the target material layer. At least one parameter among the parameters of the photoresist trimming or polymer layer deposition step and the etching parameters of the first etching step is controlled to obtain a predetermined ADI-AEI CD difference ratio.

摘要翻译： 描述了用于控制具有不同尺寸的开口的ADI-AEI CD差异比率的方法。 开口依次形成为含硅材料层，蚀刻电阻层和靶材料层。 在开口蚀刻步骤之前，光致抗蚀剂掩模中的至少一个开口图案的尺寸通过基本上保形的聚合物层的光致抗蚀剂修饰或沉积而改变。 执行在更宽的开口图案的侧壁上形成较厚聚合物的第一蚀刻步骤以形成图案化的含Si材料层。 执行第二蚀刻步骤以去除蚀刻电阻层和目标材料层的暴露部分。 控制光致抗蚀剂修整或聚合物层沉积步骤的参数中的至少一个参数和第一蚀刻步骤的蚀刻参数以获得预定的ADI-AEI CD差异比。

公开(公告)号：US08835324B2

公开(公告)日：2014-09-16

申请号：US13174875

申请日：2011-07-01

申请人： Chieh-Te Chen ,  Yi-Po Lin ,  Feng-Yih Chang ,  Chih-Wen Feng ,  Shang-Yuan Tsai

发明人： Chieh-Te Chen ,  Yi-Po Lin ,  Feng-Yih Chang ,  Chih-Wen Feng ,  Shang-Yuan Tsai

IPC分类号： H01L21/311 ,  H01L21/768

CPC分类号： H01L21/31144 ,  H01L21/76816

摘要： In an exemplary method for forming contact holes, a substrate overlaid with an etching stop layer and an interlayer dielectric layer in that order is firstly provided. A first etching process then is performed to form at least a first contact opening in the interlayer dielectric layer. A first carbon-containing dielectric layer subsequently is formed overlying the interlayer dielectric layer and filling into the first contact opening. After that, a first anti-reflective layer and a first patterned photo resist layer are sequentially formed in that order overlying the carbon-containing dielectric layer. Next, a second etching process is performed by using the first patterned photo resist layer as an etching mask to form at least a second contact opening in the interlayer dielectric layer.

摘要翻译： 在形成接触孔的示例性方法中，首先提供覆盖有蚀刻停止层和层间电介质层的基板。 然后执行第一蚀刻工艺以在层间电介质层中形成至少第一接触开口。 随后形成第一含碳介电层，覆盖层间电介质层并填充到第一接触开口中。 之后，依次形成第一抗反射层和第一图案化光致抗蚀剂层，以覆盖含碳电介质层的顺序。 接下来，通过使用第一图案化光致抗蚀剂层作为蚀刻掩模来进行第二蚀刻工艺，以在层间电介质层中形成至少第二接触开口。

公开(公告)号：US20090145877A1

公开(公告)日：2009-06-11

申请号：US12371809

申请日：2009-02-16

申请人： Feng-Yih Chang ,  Pei-Yu Chou ,  Jiunn-Hsiung Liao ,  Chih-Wen Feng ,  Ying-Chih Lin

发明人： Feng-Yih Chang ,  Pei-Yu Chou ,  Jiunn-Hsiung Liao ,  Chih-Wen Feng ,  Ying-Chih Lin

IPC分类号： B44C1/22

CPC分类号： H01L21/76804 ,  H01L21/31144 ,  H01L21/76895

摘要： A method for controlling an ADI-AEI CD difference ratio of openings having different sizes is described. The openings are formed through a silicon-containing material layer, an etching resistive layer and a target material layer in turn. Before the opening etching steps, at least one of the opening patterns in the photoresist mask is altered in size through photoresist trimming or deposition of a substantially conformal polymer layer. A first etching step forming thicker polymer on the sidewall of the wider opening pattern is performed to form a patterned Si-containing material layer. A second etching step is performed to remove exposed portions of the etching resistive layer and the target material layer. At least one parameter among the parameters of the photoresist trimming or polymer layer deposition step and the etching parameters of the first etching step is controlled to obtain a predetermined ADI-AEI CD difference ratio.

摘要翻译： 描述了用于控制具有不同尺寸的开口的ADI-AEI CD差异比率的方法。 开口依次形成为含硅材料层，蚀刻电阻层和靶材料层。 在开口蚀刻步骤之前，光致抗蚀剂掩模中的至少一个开口图案的尺寸通过基本上保形的聚合物层的光致抗蚀剂修饰或沉积而改变。 执行在更宽的开口图案的侧壁上形成较厚聚合物的第一蚀刻步骤以形成图案化的含Si材料层。 执行第二蚀刻步骤以去除蚀刻电阻层和目标材料层的暴露部分。 控制光致抗蚀剂修整或聚合物层沉积步骤的参数中的至少一个参数和第一蚀刻步骤的蚀刻参数以获得预定的ADI-AEI CD差异比。

公开(公告)号：US20130005151A1

公开(公告)日：2013-01-03

申请号：US13174875

申请日：2011-07-01

申请人： Chieh-Te CHEN ,  Yi-Po Lin ,  Feng-Yih Chang ,  Chih-Wen Feng ,  Shang-Yuan Tsai

发明人： Chieh-Te CHEN ,  Yi-Po Lin ,  Feng-Yih Chang ,  Chih-Wen Feng ,  Shang-Yuan Tsai

IPC分类号： H01L21/311

CPC分类号： H01L21/31144 ,  H01L21/76816

摘要： In an exemplary method for forming contact holes, a substrate overlaid with an etching stop layer and an interlayer dielectric layer in that order is firstly provided. A first etching process then is performed to form at least a first contact opening in the interlayer dielectric layer. A first carbon-containing dielectric layer subsequently is formed overlying the interlayer dielectric layer and filling into the first contact opening. After that, a first anti-reflective layer and a first patterned photo resist layer are sequentially formed in that order overlying the carbon-containing dielectric layer. Next, a second etching process is performed by using the first patterned photo resist layer as an etching mask to form at least a second contact opening in the interlayer dielectric layer.

摘要翻译： 在形成接触孔的示例性方法中，首先提供覆盖有蚀刻停止层和层间电介质层的基板。 然后执行第一蚀刻工艺以在层间电介质层中形成至少第一接触开口。 随后形成第一含碳介电层，覆盖层间电介质层并填充到第一接触开口中。 之后，依次形成第一抗反射层和第一图案化光致抗蚀剂层，以覆盖含碳电介质层的顺序。 接下来，通过使用第一图案化光致抗蚀剂层作为蚀刻掩模来进行第二蚀刻工艺，以在层间电介质层中形成至少第二接触开口。