Preweakened on chip metal fuse using dielectric trenches for barrier layer isolation
    1.
    发明授权
    Preweakened on chip metal fuse using dielectric trenches for barrier layer isolation 有权
    用芯片金属熔断器,用介质沟槽进行阻隔层隔离

    公开(公告)号:US06323111B1

    公开(公告)日:2001-11-27

    申请号:US09428689

    申请日:1999-10-28

    IPC分类号: H01L21326

    摘要: A fuse for use in an integrated circuit includes a dielectric layer into which a trench or void is etched defined by a top opening and a bottom floor. The trench includes at least one undercut which forms an overhang in the dielectric layer partially shielding the bottom floor. A second or barrier layer deposited onto the dielectric layer is interrupted or non-continuous at the undercut. A third, or electrically conductive layer, is electrically continuous over the fuse. A weak spot in the third layer exists in the lack of structural support by the second layer at the interruption. A further weak spot in the third layer exists in the electrical isolation of the conductor layer, i.e. no leakage current through the barrier layer, at the interruption.

    摘要翻译: 用于集成电路的保险丝包括介电层,由顶部开口和底部底部限定沟槽或空隙。 沟槽包括至少一个底切部,该底切部在屏蔽底层的介电层中形成伸出部。 沉积在电介质层上的第二或阻挡层在底切处被中断或不连续。 第三个或导电层在保险丝上电连续。 第三层的弱点存在于中断时第二层缺乏结构支撑。 在中断时,在导电层的电隔离中存在第三层中的另一个弱点,即没有通过阻挡层的泄漏电流。

    Preweakened on chip metal fuse using dielectric trenches for barrier layer isolation

    公开(公告)号:US06570238B2

    公开(公告)日:2003-05-27

    申请号:US10066279

    申请日:2001-10-29

    IPC分类号: H01L2900

    摘要: A fuse for use in an integrated circuit includes a dielectric layer into which a trench or void is etched defined by a top opening and a bottom floor. The trench includes at least one undercut which forms an overhang in the dielectric layer partially shielding the bottom floor. A second or barrier layer deposited onto the dielectric layer is interrupted or non-continuous at the undercut. A third, or electrically conductive layer, is electrically continuous over the fuse. A weak spot in the third layer exists in the lack of structural support by the second layer at the interruption. A further weak spot in the third layer exists in the electrical isolation of the conductor layer, i.e. no leakage current through the barrier layer, at the interruption.