公开(公告)号：US06404016B1

公开(公告)日：2002-06-11

申请号：US09520547

申请日：2000-03-08

申请人： Fukuji Higuchi ,  Mitsuo Mori

发明人： Fukuji Higuchi ,  Mitsuo Mori

IPC分类号： H01L2362

CPC分类号： G06F1/305

摘要： In a semiconductor device in which an analog section to which power source lines Vdd1 and Vss1 are supplied and a digital section to which power source lines Vdd2 and Vss2 are supplied are mounted in an N-type semiconductor substrate and connected to each other by a signal line S11, a protection circuit HK1 is located between the power source line Vdd1 and Vdd2, the protection circuit becoming conductive when a potential difference between the power source lines Vdd1 and Vdd2 exceeds a prescribed value irrespectively of the direction of a surge input, thereby placing the power source lines Vdd1 and Vdd2 at substantially the same potential.

摘要翻译： 在提供电源线Vdd1和Vss1的模拟部分和供给电源线Vdd2和Vss2的数字部分的半导体器件中，安装在N型半导体衬底中并通过信号彼此连接 线S11，保护电路HK1位于电源线Vdd1和Vdd2之间，当电源线Vdd1和Vdd2之间的电位差超过规定值时，保护电路变得导通，而不管浪涌输入的方向如何，从而将 电源线Vdd1和Vdd2处于基本相同的电位。