公开(公告)号：US20120006254A1

公开(公告)日：2012-01-12

申请号：US13148768

申请日：2009-02-09

申请人： Masaru Fujishiro ,  Fumio Takahashi ,  Fumihito Abe ,  Shinichi Nakajima ,  Shinobu Tsutsui

发明人： Masaru Fujishiro ,  Fumio Takahashi ,  Fumihito Abe ,  Shinichi Nakajima ,  Shinobu Tsutsui

IPC分类号： C30B15/10

CPC分类号： C03B19/095 ,  C30B15/10 ,  C30B29/06 ,  Y02P40/57 ,  Y10T117/1032

摘要： The invention provides a quartz glass crucible for pulling up single-crystal silicon, and a method for producing single-crystal silicon by using it. The quartz glass crucible is characterized by having a crystallization promoter-containing layer as the inner surface thereof and is characterized in that, when single-crystal silicon is pulled up, macular crystallized regions are formed in the inner surface thereof by the action of the crystallization promoter. In the quartz glass crucible, a crystallized substance is not generated sparsely in the inner surface thereof and therefore does not shed off; outgassing holes are not generated through micro-peeling off of a part of the crystal layer formed in the inner surface thereof, unlike in a case where a crystal layer is formed entirely in the inner surface thereof; molten silicon does not penetrate into the area between the crystal layer and the underlying glass layer through the outgassing holes formed by micro-peeling off; and therefore the quartz glass crucible brings about a high yield.

摘要翻译： 本发明提供一种用于提升单晶硅的石英玻璃坩埚，以及通过使用它制造单晶硅的方法。 石英玻璃坩埚的特征在于含有结晶促进剂的层作为其内表面，其特征在于，当单晶硅被拉起时，通过结晶的作用在其内表面形成黄斑结晶区 启动子。 在石英玻璃坩埚中，结晶物质在其内表面上不会稀疏地产生，因此不会脱落; 与在其内表面整体形成结晶层的情况不同，在内表面形成的结晶层的一部分的微观剥离不会产生除气孔。 熔融硅通过微剥离形成的除气孔不会渗透到晶体层和下层玻璃层之间的区域中; 因此石英玻璃坩埚产生高产量。