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    Vitreous silica crucible
    3.
    发明授权
    Vitreous silica crucible 有权

    公开(公告)号：US09797063B2

    公开(公告)日：2017-10-24

    申请号：US13307253

    申请日：2011-11-30

    申请人： Toshiaki Sudo ,  Hiroshi Kishi ,  Eriko Suzuki

    发明人： Toshiaki Sudo ,  Hiroshi Kishi ,  Eriko Suzuki

    IPC分类号： C30B15/10 ,  C03B19/09

    CPC分类号： C30B15/10 ,  C03B19/095 ,  Y10T117/1032

    摘要： The present invention provides a vitreous silica crucible which can suppress buckling and sidewall lowering of the crucible without fear of mixing of impurities into silicon melt. According to the present invention, provided is a vitreous silica crucible for pulling a silicon single crystal, wherein a ratio I2/I1 is 0.67 to 1.17, where I1 and I2 are area intensities of the peaks at 492 cm−1 and 606 cm−1, respectively, in Raman spectrum of vitreous silica of the region having a thickness of 2 mm from an outer surface to an inner surface of a wall of the crucible.

    QUARTZ GLASS CRUCIBLE FOR PULLING SINGLE CRYSTAL SILICON AND METHOD FOR PRODUCING THE SAME
    5.
    发明申请
    QUARTZ GLASS CRUCIBLE FOR PULLING SINGLE CRYSTAL SILICON AND METHOD FOR PRODUCING THE SAME 审中-公开

    公开(公告)号：US20170175291A1

    公开(公告)日：2017-06-22

    申请号：US15327206

    申请日：2015-06-01

    申请人： SHIN-ETSU QUARTZ PRODUCTS CO., LTD.

    发明人： Yuji BABA

    IPC分类号： C30B15/10 ,  C03B32/02 ,  C03B20/00 ,  C03C19/00 ,  C30B29/06 ,  C03B19/09

    CPC分类号： C30B15/10 ,  C03B19/095 ,  C03B20/00 ,  C03B32/02 ,  C03C19/00 ,  C30B29/06 ,  Y02P40/57

    摘要： The present invention is a method for producing a quartz glass crucible for pulling a single crystal silicon from a silicon melt held therein, including the steps of: producing a quartz glass crucible having an outer layer including an opaque quartz glass containing bubbles therein and an inner layer including a transparent quartz glass containing substantially no bubbles; roughening a region of an inner surface of the produced quartz glass crucible, the region being in contact with the silicon melt when holding the silicon melt; and heating the quartz glass crucible having the roughened inner surface to crystallize a surface of the roughened region. This can produce a quartz glass crucible for pulling a single crystal silicon which can suppress generation of a brown ring on the inner surface of the crucible during pulling the single crystal silicon and can suppress crystallinity disorder of the single crystal silicon.

    Method of manufacturing vitreous silica crucible, vitreous silica crucible
    7.
    发明授权
    Method of manufacturing vitreous silica crucible, vitreous silica crucible 有权
    玻璃石坩埚，石英玻璃坩埚的制造方法

    公开(公告)号：US09469560B2

    公开(公告)日：2016-10-18

    申请号：US13307316

    申请日：2011-11-30

    申请人： Toshiaki Sudo ,  Takuma Yoshioka ,  Koichi Suzuki ,  Shinsuke Yamazaki

    发明人： Toshiaki Sudo ,  Takuma Yoshioka ,  Koichi Suzuki ,  Shinsuke Yamazaki

    IPC分类号： C03B19/09 ,  C03B19/06 ,  C30B11/00 ,  C30B15/10

    CPC分类号： C03B19/095 ,  C03B19/066 ,  C30B11/002 ,  C30B15/10 ,  Y10T428/131 ,  Y10T428/1314 ,  Y10T428/1317

    摘要： The present invention provides a method of manufacturing a vitreous silica crucible having a transparent layer by use of waste vitreous silica. According to the present invention, there is provided a method of manufacturing a vitreous silica crucible for manufacturing a monocrystalline or polycrystalline silicon ingot, including a process of vitrifying a silica powder sintered body having a crucible shape in the whole or part of the thickness direction by arc fusing the silica powder sintered body from the inner surface side, wherein the method further includes at least one means of (1) depressurizing the silica powder sintered body from the outer surface side during the arc fusing, and (2) forming a synthetic vitreous silica layer on the inner surface by spraying synthetic silica powder onto the inner surface of the silica powder sintered body during the arc fusing.

    摘要翻译： 本发明提供一种通过使用废二氧化硅二氧化硅制造具有透明层的石英玻璃坩埚的方法。 根据本发明，提供了一种制造用于制造单晶硅或多晶硅锭的石英玻璃坩埚的方法，该方法包括将整个或部分厚度方向上具有坩埚形状的二氧化硅粉末烧结体玻璃化的方法， 从内表面电弧熔融二氧化硅粉末烧结体，其中该方法还包括（1）在电弧熔合期间从外表面侧使二氧化硅粉末烧结体减压的至少一种方法，和（2）形成合成玻璃态 通过在电弧熔合期间将合成二氧化硅粉末喷涂到二氧化硅粉末烧结体的内表面上，在内表面上形成二氧化硅层。

    Metal and graphite mold and method of making a crucible
    8.
    发明授权
    Metal and graphite mold and method of making a crucible 有权
    金属和石墨模具及坩埚制作方法

    公开(公告)号：US09216923B2

    公开(公告)日：2015-12-22

    申请号：US13189897

    申请日：2011-07-25

    申请人： Katsuhiko Kemmochi ,  Larry Baer ,  Carl Hagstrom

    发明人： Katsuhiko Kemmochi ,  Larry Baer ,  Carl Hagstrom

    IPC分类号： C03B19/04 ,  C03B19/09

    CPC分类号： C03B19/095 ,  Y02P40/57

    摘要： A mold for making a fused silica crucible includes a cylindrical can having an interior bore. A graphite insert is received in the bore and has an upper surface adapted to form the lower surface of the crucible while the interior bore of the can forms the side wall of the crucible. Silica grain is deposited in the mold while it rotates. Bores formed in the can above the insert and in the insert draw air through the silica during fusion.

    摘要翻译： 用于制造石英玻璃坩埚的模具包括具有内孔的圆筒形罐。 石墨插入件容纳在孔中并且具有适于形成坩埚的下表面的上表面，同时罐的内孔形成坩埚的侧壁。 二氧化硅颗粒在其旋转时沉积在模具中。 在插入件上方的罐中形成的孔和插入件中的孔在熔化期间通过二氧化硅吸入空气。

    Silica crucible for pulling silicon single crystal and method of producing the same
    9.
    发明授权
    Silica crucible for pulling silicon single crystal and method of producing the same 有权
    用于拉硅单晶的二氧化硅坩埚及其制造方法

    公开(公告)号：US09150447B2

    公开(公告)日：2015-10-06

    申请号：US12919732

    申请日：2009-03-02

    申请人： Atsushi Shimazu ,  Tadahiro Sato

    发明人： Atsushi Shimazu ,  Tadahiro Sato

    IPC分类号： C30B35/00 ,  C03B19/09 ,  C30B15/10 ,  C03C15/00

    CPC分类号： C03B19/095 ,  C03C15/00 ,  C30B15/10 ,  C30B35/002 ,  Y02P40/57 ,  Y10T117/1032

    摘要： There is provided a silica crucible for pulling a silicon single crystal, comprising silica glass and having a two-layer structure of an outer layer and an inner layer, wherein the inner layer, in a sectional side view of the crucible, has a wavy inner surface shape having mountain parts and valley parts at least between a start position and an end position for the pulling of a silicon single crystal in a silicon melt surface, and when a distance from an upper opening end of the crucible to the start position for the pulling of the silicon single crystal is 100, only a crucible portion from the upper opening end to a position within a range of 40 to 100 is crystalline.

    摘要翻译： 提供了一种用于拉制硅单晶的二氧化硅坩埚，其包括石英玻璃并具有外层和内层的两层结构，其中在坩埚的侧视图中，内层具有波状内部 至少在用于在硅熔体表面中拉出硅单晶的起始位置和结束位置之间的山部分和谷部分的表面形状，并且当从坩埚的上部开口端到达坩埚的开始位置的距离 硅单晶的拉伸为100，从上开口端到40〜100°范围内的坩埚部仅为坩埚。

    Method of making a silica crucible in a controlled atmosphere
    10.
    发明授权
    Method of making a silica crucible in a controlled atmosphere 有权
    在受控气氛中制造石英坩埚的方法

    公开(公告)号：US09003832B2

    公开(公告)日：2015-04-14

    申请号：US12623140

    申请日：2009-11-20

    申请人： Katsuhiko Kemmochi ,  Thomas Kayser ,  Robert Joseph Coolich ,  Walter Lehmann

    发明人： Katsuhiko Kemmochi ,  Thomas Kayser ,  Robert Joseph Coolich ,  Walter Lehmann

    IPC分类号： C03B19/09

    CPC分类号： C03B19/095 ,  Y10T428/131

    摘要： A silica crucible is made in a mold cavity of the type in which ambient atmosphere can be drawn through silica grain in the cavity. In one embodiment, a silica grain layer is formed in the mold cavity and gas, which may comprise helium, nitrogen, hydrogen, or a mixture thereof, is introduced into the mold cavity. The silica grain layer is heated while substantially no ambient atmosphere is drawn through the silica grain. Thereafter, at least a portion of the silica grain layer is fused while drawing ambient atmosphere through the silica grain. The gas displaces air in the mold cavity thereby reducing nitrogen oxides and ozone.

    摘要翻译： 一种二氧化硅坩埚制成在这样的模腔中，其中环境气氛可以通过空腔中的二氧化硅颗粒被吸入。 在一个实施方案中，在模腔中形成二氧化硅颗粒层，并且将可能包含氦，氮，氢或其混合物的气体引入模腔中。 加热二氧化硅颗粒层，同时基本上没有环境气氛通过二氧化硅颗粒。 此后，将二氧化硅粒子层的至少一部分熔融，同时通过二氧化硅粒子吸收环境气氛。 气体置换模腔中的空气，从而减少氮氧化物和臭氧。