One-transistor DRAM cell device having quantum well structure

    公开(公告)号:US11158732B2

    公开(公告)日:2021-10-26

    申请号:US16660203

    申请日:2019-10-22

    Abstract: A 1T DRAM cell device having two or more heterojunction surfaces perpendicular to the channel length direction and a quantum well at the drain region side. The 1T DRAM cell device described herein may be driven by GIDL or band-to-band tunneling, so that low voltage and high speed operation can be performed, and retention time and read current margin can be dramatically increased. It can also be driven as a memory device in harsh environments with high temperatures. Furthermore, since the heterojunction surfaces can be formed by vertically stacking epitaxial layers on a semiconductor substrate such as silicon, the conventional CMOS process technology can be used, and the area occupied by the device can be reduced as much as possible without limiting the channel length.

    MICRO-NEEDLE AND METHOD OF MANUFACTURE

    公开(公告)号:US20210121673A1

    公开(公告)日:2021-04-29

    申请号:US16965177

    申请日:2018-11-07

    Abstract: Disclosed is a microneedle including: a needle part including a plurality of tips formed from a liquid formulation formed with a medicinal solution and capable of penetrating the skin; and a base for supporting the plurality of tips; and a guide part configured to guide the needle part to penetrate the skin, wherein the needle part is provided with separation guides formed between the tips and the base to separate the tips from the base. According to such a configuration, the tips rapidly penetrate the skin and are rapidly separated therefrom, which allows quantitative drug delivery.

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