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公开(公告)号：US11122656B1
公开(公告)日：2021-09-14
申请号：US16933631
申请日：2020-07-20
发明人： Tsung Hsien Yen , Hsing Yeh Wang , Feng Jui Shen
IPC分类号： H05B45/10 , H03K17/74 , H03K17/687 , H05B45/34 , H05B45/30 , H05B45/345
摘要： An application structure of a gallium nitride field-effect transistor in a dimmer circuit is disclosed, including an LED module, a power supply circuit, a current holding circuit, and a drive circuit. The power supply circuit includes a power supply, a dimmer unit, and a rectifier circuit. The current holding circuit is electrically connected to the rectifier circuit, includes a first control switch, a capacitor capable of charging and discharging, and a plurality of resistors whose current is set, and is configured to provide a stable current to the dimmer unit. The first control switch is provided with a gallium nitride field-effect transistor. The drive circuit is electrically connected to the current holding circuit, includes a second control switch, a screen flicker prevention chip electrically connected to the LED module, and a plurality of resistors whose current is set, and is configured to stably drive the LED module to emit light. The second control switch is provided with a gallium nitride field-effect transistor.
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公开(公告)号：US10716187B1
公开(公告)日：2020-07-14
申请号：US16678143
申请日：2019-11-08
发明人： Tsung Hsien Yen , Hsing Yeh Wang , Feng Jui Shen
摘要： An LED driving structure includes an LED module, a power supply circuit, a voltage stabilizing circuit, a temperature compensation circuit and a gallium nitride field-effect transistor that are electrically connected. The power supply circuit is configured to supply a current to the LED module. The voltage stabilizing circuit includes a rectifying diode, a resistor and a Zener diode, and is connected to a gate of the gallium nitride field-effect transistor through the temperature compensation circuit for providing a stable voltage. The temperature compensation circuit includes at least one resistor, a thermistor and a transistor connected to the gate of the gallium nitride field-effect transistor for the LED module after being energized to maintain its power stably when there are voltage fluctuations and temperature fluctuations.
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公开(公告)号：US20220020677A1
公开(公告)日：2022-01-20
申请号：US16933668
申请日：2020-07-20
发明人： Tsung Hsien YEN , Hsing Yeh WANG , Feng Jui SHEN
IPC分类号： H01L23/498 , H01L29/20
摘要： A package structure of a common-source common-gate gallium nitride field-effect transistor is disclosed, including a lead frame. A gallium nitride field-effect transistor and a metal oxide semiconductor are directly disposed on the lead frame. The gallium nitride field-effect transistor includes a first matrix directly disposed on the lead frame. A first drain, a first gate, and a first source are disposed on a surface side of the first matrix, and the first drain and the first gate are separately electrically connected to the lead frame. The metal oxide semiconductor includes a second matrix directly disposed on the lead frame. A second drain, a second gate, and a second source are disposed on a surface side of the second matrix, the second drain is directly electrically connected to the first source, and the second gate and the second source are separately electrically connected to the lead frame.
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公开(公告)号：US20200318821A1
公开(公告)日：2020-10-08
申请号：US16373969
申请日：2019-04-03
发明人： Hsing Yeh WANG , Tsung Hsien YEN
摘要： The LED light bulb includes a housing, a bulb holder, at least one LED illuminating member disposed in the housing for comprehensive and effective illumination, and a driver board that is disposed in the bulb holder and has a gallium nitride transistor. The LED illuminating member includes a plurality of LED chips, without reflectors, packaged and arranged in a staggering manner for comprehensive and effective illumination. Through the gallium nitride transistor having the advantages of high efficiency, high frequency and low load cycle power conversion, the LED illuminating member has better illuminating performance and can reduce the size of its driver board. The driver board can be installed in a conventional lamp, without the limitation of the size of the driver board.
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公开(公告)号：US11315864B2
公开(公告)日：2022-04-26
申请号：US16933668
申请日：2020-07-20
发明人： Tsung Hsien Yen , Hsing Yeh Wang , Feng Jui Shen
IPC分类号： H01L29/778 , H01L23/498 , H01L29/20 , H01L27/12 , H01L23/495 , H01L25/07 , H01L23/31
摘要： A package structure of a common-source common-gate gallium nitride field-effect transistor is disclosed, including a lead frame. A gallium nitride field-effect transistor and a metal oxide semiconductor are directly disposed on the lead frame. The gallium nitride field-effect transistor includes a first matrix directly disposed on the lead frame. A first drain, a first gate, and a first source are disposed on a surface side of the first matrix, and the first drain and the first gate are separately electrically connected to the lead frame. The metal oxide semiconductor includes a second matrix directly disposed on the lead frame. A second drain, a second gate, and a second source are disposed on a surface side of the second matrix, the second drain is directly electrically connected to the first source, and the second gate and the second source are separately electrically connected to the lead frame.
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