Method for the depth corrected detection of ionizing events from a co-planar grids sensor
    1.
    发明授权
    Method for the depth corrected detection of ionizing events from a co-planar grids sensor 失效
    用于从共面网格传感器深度校正检测电离事件的方法

    公开(公告)号:US07531808B1

    公开(公告)日:2009-05-12

    申请号:US11626919

    申请日:2007-01-25

    IPC分类号: H01L27/00 H01L27/146

    摘要: A method for the detection of ionizing events utilizing a co-planar grids sensor comprising a semiconductor substrate, cathode electrode, collecting grid and non-collecting grid. The semiconductor substrate is sensitive to ionizing radiation. A voltage less than 0 Volts is applied to the cathode electrode. A voltage greater than the voltage applied to the cathode is applied to the non-collecting grid. A voltage greater than the voltage applied to the non-collecting grid is applied to the collecting grid. The collecting grid and the non-collecting grid are summed and subtracted creating a sum and difference respectively. The difference and sum are divided creating a ratio. A gain coefficient factor for each depth (distance between the ionizing event and the collecting grid) is determined, whereby the difference between the collecting electrode and the non-collecting electrode multiplied by the corresponding gain coefficient is the depth corrected energy of an ionizing event. Therefore, the energy of each ionizing event is the difference between the collecting grid and the non-collecting grid multiplied by the corresponding gain coefficient. The depth of the ionizing event can also be determined from the ratio.

    摘要翻译: 一种利用包括半导体衬底,阴极电极,集电栅极和非集电栅极的共面栅极传感器来检测电离事件的方法。 半导体衬底对电离辐射敏感。 向阴极施加小于0伏特的电压。 将大于施加到阴极的电压的电压施加到非集电栅极。 将大于施加到非集电栅极的电压的电压施加到集电栅极。 收集网格和非收集网格相加和相减,分别创建和差异。 差异和总和分割创造一个比例。 确定每个深度(电离事件和收集网格之间的距离)的增益系数因子,由此收集电极和非集电极之间的差乘以相应的增益系数是电离事件的深度校正能量。 因此,每个电离事件的能量是收集网格和非收集网格之间的差值乘以相应的增益系数。 电离事件的深度也可以从该比例确定。