DETECTOR SYSTEMS FOR IMAGING
    1.
    发明公开

    公开(公告)号:US20240302546A1

    公开(公告)日:2024-09-12

    申请号:US18661698

    申请日:2024-05-12

    发明人: Jingyi YU

    IPC分类号: G01T1/24 A61B6/42

    摘要: Detector systems are provided. The detector system may include a plurality of edge-on detector modules. Each edge-on detector module may include: a silicon substrate including a front side corresponding to a first side of the each edge-on detector module and a rear side corresponding to a second side of the each edge-on detector module; a plurality of detection elements disposed on the front side of the silicon substrate; a backside electrode disposed on the rear side of the silicon substrate; and/or an anti-scatter structure disposed on at least one of the first side or the second side of the each edge-on detector module, the anti-scatter structure being configured to prevent or reduce scattering of photons emitted into the silicon substrate. The silicon substrate, the plurality of detection elements, the backside electrode, and/or the anti-scatter structure may be configured as an integral piece.

    FLEXIBLE DETECTOR AND IMAGING DEVICE INCLUDING THE SAME

    公开(公告)号:US20240272315A1

    公开(公告)日:2024-08-15

    申请号:US18641617

    申请日:2024-04-22

    发明人: Jungmin CHOI

    IPC分类号: G01T1/24 G01N23/04

    摘要: Provided is a flexible detector and an imaging device including the same, which are capable of improving structural stability of the detector even in a state in which the detector changes in shape. A detector according to an embodiment includes a first part including a first housing made of an elastic material, and a detection panel provided in the first housing, a second part connected to the first part and including a second housing made of an inelastic material or a material having higher rigidity than the material of the first housing, and a reinforcement member disposed outside the detection panel and provided on the first housing so as to surround at least a part of the detection panel on a horizontal plane.

    RADIATION DETECTOR MODULE INCLUDING APPLICATION SPECIFIC INTEGRATED CIRCUIT WITH THROUGH-SUBSTRATE VIAS

    公开(公告)号:US20240230932A9

    公开(公告)日:2024-07-11

    申请号:US18468891

    申请日:2023-09-18

    IPC分类号: G01T1/24 G01T1/175 G01T1/29

    摘要: A radiation detector unit includes at least one radiation sensor having pixel detectors that generate event detection signals in response to photon interaction events, an application specific integrated circuit (ASIC) including circuit components on a substrate, the at least one radiation sensor mounted over the application specific integrated circuit via a plurality of bonding material portions such that event detection signals generated in each of the pixel detectors of the at least one radiation sensor are received at a respective pixel region of the ASIC, and the circuit components of the ASIC convert the event detection signals received at each of the pixel regions of the ASIC to digital detection signals, and a carrier board underlying the ASIC, where the ASIC includes a plurality of through-substrate vias (TSVs) electrically coupling the ASIC to the carrier board, each of the TSVs underlying an active pixel detector of the at least one radiation sensor.

    RADIATION DETECTOR MODULE INCLUDING APPLICATION SPECIFIC INTEGRATED CIRCUIT WITH THROUGH-SUBSTRATE VIAS

    公开(公告)号:US20240134071A1

    公开(公告)日:2024-04-25

    申请号:US18468891

    申请日:2023-09-17

    IPC分类号: G01T1/24 G01T1/175 G01T1/29

    摘要: A radiation detector unit includes at least one radiation sensor having pixel detectors that generate event detection signals in response to photon interaction events, an application specific integrated circuit (ASIC) including circuit components on a substrate, the at least one radiation sensor mounted over the application specific integrated circuit via a plurality of bonding material portions such that event detection signals generated in each of the pixel detectors of the at least one radiation sensor are received at a respective pixel region of the ASIC, and the circuit components of the ASIC convert the event detection signals received at each of the pixel regions of the ASIC to digital detection signals, and a carrier board underlying the ASIC, where the ASIC includes a plurality of through-substrate vias (TSVs) electrically coupling the ASIC to the carrier board, each of the TSVs underlying an active pixel detector of the at least one radiation sensor.

    Semiconductor X-Ray Detector
    7.
    发明公开

    公开(公告)号:US20230258831A1

    公开(公告)日:2023-08-17

    申请号:US18309010

    申请日:2023-04-28

    发明人: Peiyan CAO Yurun Liu

    IPC分类号: G01T1/24

    CPC分类号: G01T1/246 G01T1/241

    摘要: An apparatus for detecting X-ray, comprising an X-ray absorption layer comprising an electrode, an electronics layer and a wall sealing a space among electrical connections between the X-ray absorption layer and the electronics layer. The electronics layer comprises: a first and second voltage comparators configured to compare a voltage of an electrode to a first and second thresholds respectively; a counter configured to register a number of X-ray photons absorbed by the X-ray absorption layer; and a controller configured to: start a time delay from a time at which an absolute value of the voltage equals or exceeds an absolute value of the first threshold; activate the second voltage comparator during the time delay; cause the number registered by the counter to increase by one, if, during the time delay, an absolute value of the voltage equals or exceeds an absolute value of the second threshold.

    Radiation detecting element and method for producing radiation detecting element

    公开(公告)号:US11721778B2

    公开(公告)日:2023-08-08

    申请号:US16971716

    申请日:2019-03-15

    摘要: Provided is a radiation detecting element that has high adhesion between electrode portions and a substrate and does not suffer from performance failures due to insufficient insulation between the electrode portions, even if a distance between the electrode portions is narrower in order to obtain a high-definition radiation drawn image. The radiation detecting element includes: a plurality of electrode portions; and an insulating portion provided between the electrode portions on a surface of a substrate made of a compound semiconductor crystal containing cadmium telluride or cadmium zinc telluride, wherein an intermediate layer containing tellurium oxide is present between each of the electrode portions and the substrate, and wherein tellurium oxide is present on an upper portion of the insulating portion, and the tellurium oxide on the upper portion of the insulating portion has a maximum thickness of 30 nm or less.

    RADIATION DETECTION ELEMENT, RADIATION DETECTOR AND RADIATION DETECTION APPARATUS

    公开(公告)号:US20190011577A1

    公开(公告)日:2019-01-10

    申请号:US16028597

    申请日:2018-07-06

    摘要: A radiation detection element comprises: a semiconductor part generating an electric charge by entrance of radiation; a signal output electrode provided at the semiconductor part and outputting a signal caused by the electric charge; a potential gradient generation electrode provided at the semiconductor part, for applying voltage such that a potential gradient in which a potential varies toward the signal output electrode is generated inside the semiconductor part; a collection electrode provided at the semiconductor part, for collecting electric charges not derived from radiation; an insulating film provided on a side of the semiconductor part where the signal output electrode is located; and a conductive layer provided between the insulating film and a part of the semiconductor part, and having electric resistance lower than the electric resistance of the semiconductor part and higher than the electric resistance of the collection electrode. The conductive layer is located at a position where a distance from the signal output electrode is equal to or longer than a distance between the collection electrode and the signal output electrode.