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    Integrated circuit power grid with improved routing resources and bypass capacitance
    1.
    发明授权
    Integrated circuit power grid with improved routing resources and bypass capacitance 有权
    集成电路电网具有改进的路由资源和旁路电容

    公开(公告)号：US09070684B2

    公开(公告)日：2015-06-30

    申请号：US13460291

    申请日：2012-04-30

    申请人： Scott A. Segan ,  Scott T. Van Horn ,  Gary E. Hall ,  Matthew J. Gehman ,  Richard Muscavage

    发明人： Scott A. Segan ,  Scott T. Van Horn ,  Gary E. Hall ,  Matthew J. Gehman ,  Richard Muscavage

    IPC分类号： H01L27/10 ,  H01L23/52 ,  H01L23/522 ,  H01L23/528

    CPC分类号： H01L23/5223 ,  H01L23/5283 ,  H01L23/5286 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An integrated circuit power grid is provided with improved routing resources and bypass capacitance. A power grid for an integrated circuit comprises a plurality of thick metal layers having a plurality of metal traces, wherein at least one of the thick metal layers has a lower pitch than a substantial maximum pitch allowed under the design rules for a given integrated circuit fabrication technology. A power grid for an integrated circuit can also comprise a plurality of thin metal layers having a plurality of metal traces, wherein a plurality of the metal traces on different thin metal layers are connected by at least one via, wherein the at least one via is substantially surrounded by a metal trace on at least one thin metal level connected to a different power supply voltage than a power supply of one or more additional thin metal levels. The via can be positioned, for example, at an intersection of a given standard cell row and a given vertical strap.

    摘要翻译： 集成电路电网提供改进的路由资源和旁路电容。 用于集成电路的电网包括具有多个金属迹线的多个厚金属层，其中至少一个厚金属层具有比针对给定集成电路制造的设计规则允许的基本最大间距更低的间距 技术。 用于集成电路的电网还可以包括具有多个金属迹线的多个薄金属层，其中不同金属薄层上的多个金属迹线通过至少一个通孔连接，其中至少一个通孔是 在与一个或多个另外的金属级别的电源相比不同的电源电压的至少一个细金属电平上基本上被金属迹线包围。 通孔可以定位在例如给定的标准单元行和给定的垂直带的交点处。

    INTEGRATED CIRCUIT POWER GRID WITH IMPROVED ROUTING RESOURCES AND BYPASS CAPACITANCE
    2.
    发明申请
    INTEGRATED CIRCUIT POWER GRID WITH IMPROVED ROUTING RESOURCES AND BYPASS CAPACITANCE 有权
    具有改进的路由资源和旁路电容的集成电路电源

    公开(公告)号：US20130285219A1

    公开(公告)日：2013-10-31

    申请号：US13460291

    申请日：2012-04-30

    申请人： Scott A. Segan ,  Scott T. Van Horn ,  Gary E. Hall ,  Matthew J. Gehman ,  Richard Muscavage

    发明人： Scott A. Segan ,  Scott T. Van Horn ,  Gary E. Hall ,  Matthew J. Gehman ,  Richard Muscavage

    IPC分类号： H01L23/495

    CPC分类号： H01L23/5223 ,  H01L23/5283 ,  H01L23/5286 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An integrated circuit power grid is provided with improved routing resources and bypass capacitance. A power grid for an integrated circuit comprises a plurality of thick metal layers having a plurality of metal traces, wherein at least one of the thick metal layers has a lower pitch than a substantial maximum pitch allowed under the design rules for a given integrated circuit fabrication technology. A power grid for an integrated circuit can also comprise a plurality of thin metal layers having a plurality of metal traces, wherein a plurality of the metal traces on different thin metal layers are connected by at least one via, wherein the at least one via is substantially surrounded by a metal trace on at least one thin metal level connected to a different power supply voltage than a power supply of one or more additional thin metal levels. The via can be positioned, for example, at an intersection of a given standard cell row and a given vertical strap.

    摘要翻译： 集成电路电网提供改进的路由资源和旁路电容。 用于集成电路的电网包括具有多个金属迹线的多个厚金属层，其中至少一个厚金属层具有比针对给定集成电路制造的设计规则允许的基本最大间距更低的间距 技术。 用于集成电路的电网还可以包括具有多个金属迹线的多个薄金属层，其中不同金属薄层上的多个金属迹线通过至少一个通孔连接，其中至少一个通孔是 在与一个或多个另外的金属级别的电源相比不同的电源电压的至少一个细金属电平上基本上被金属迹线包围。 通孔可以例如位于给定的标准单元行和给定的垂直带的交点处。