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公开(公告)号：US20090035945A1
公开(公告)日：2009-02-05
申请号：US12180514
申请日：2008-07-25
CPC分类号： H01L21/67069 , C23C16/4405 , C23C16/52 , H01J37/32357 , H01J37/32862 , H01J37/32963
摘要： In remote plasma cleaning, it is difficult to locally excite a plasma because the condition is not suitable for plasma excitation different from that at the time of film formation and a method using light has a problem of fogginess of a detection window that cannot be avoided in a CVD process and is not suitable for a mass production process. In order to solve these problems, the outline of the present invention is a manufacturing method of a semiconductor integrated circuit device in which a step of depositing a desired film by exciting a reaction gas using a plasma in a reaction chamber and a step of introducing a cleaning gas excited in a remote plasma excitation chamber into the reaction chamber and performing remote plasma cleaning of the reaction chamber in an atmosphere without plasma excitation are repeated, wherein a local plasma is generated in the reaction chamber or a vacuum system for evacuating the reaction chamber by a plasma excitation system of capacitively coupled type and the end point of the remote plasma cleaning is detected by monitoring the electrical characteristic of the plasma.
摘要翻译： 在远程等离子体清洗中，由于条件不适合与成膜时不同的等离子体激发，因此难以局部激发等离子体，使用光的方法存在无法避免的检测窗的雾化问题 CVD工艺，不适合大批量生产。 为了解决这些问题，本发明的概述是一种半导体集成电路器件的制造方法，其中通过在反应室中使用等离子体激发反应气体来沉积所需的膜的步骤，以及引入 在远程等离子体激发室中被激发到反应室中并且在没有等离子体激发的气氛中进行反应室的远程等离子体清洗的清洁气体被重复，其中在反应室中产生局部等离子体或用于抽空反应室的真空系统 通过电容耦合型等离子体激发系统，通过监测等离子体的电气特性来检测远程等离子体清洗的终点。
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公开(公告)号：US07790478B2
公开(公告)日：2010-09-07
申请号：US12180514
申请日：2008-07-25
IPC分类号： H01L21/66
CPC分类号： H01L21/67069 , C23C16/4405 , C23C16/52 , H01J37/32357 , H01J37/32862 , H01J37/32963
摘要： In remote plasma cleaning, it is difficult to locally excite a plasma because the condition is not suitable for plasma excitation different from that at the time of film formation and a method using light has a problem of fogginess of a detection window that cannot be avoided in a CVD process and is not suitable for a mass production process. In order to solve these problems, the outline of the present invention is a manufacturing method of a semiconductor integrated circuit device in which a step of depositing a desired film by exciting a reaction gas using a plasma in a reaction chamber and a step of introducing a cleaning gas excited in a remote plasma excitation chamber into the reaction chamber and performing remote plasma cleaning of the reaction chamber in an atmosphere without plasma excitation are repeated, wherein a local plasma is generated in the reaction chamber or a vacuum system for evacuating the reaction chamber by a plasma excitation system of capacitively coupled type and the end point of the remote plasma cleaning is detected by monitoring the electrical characteristic of the plasma.
摘要翻译： 在远程等离子体清洗中，由于条件不适合与成膜时不同的等离子体激发，因此难以局部激发等离子体，使用光的方法存在无法避免的检测窗的雾化问题 CVD工艺，不适合大批量生产。 为了解决这些问题，本发明的概述是一种半导体集成电路器件的制造方法，其中通过在反应室中使用等离子体激发反应气体来沉积所需的膜的步骤，以及引入 在远程等离子体激发室中被激发到反应室中并且在没有等离子体激发的气氛中进行反应室的远程等离子体清洗的清洁气体被重复，其中在反应室中产生局部等离子体或用于抽空反应室的真空系统 通过电容耦合型等离子体激发系统，通过监测等离子体的电气特性来检测远程等离子体清洗的终点。
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