公开(公告)号：US07119358B2

公开(公告)日：2006-10-10

申请号：US10723285

申请日：2003-11-25

申请人： Peter Werner ,  Viatcheslav Egorov ,  Vadim Talalaev ,  George Cirlin ,  Nikolai Zakharov

发明人： Peter Werner ,  Viatcheslav Egorov ,  Vadim Talalaev ,  George Cirlin ,  Nikolai Zakharov

IPC分类号： H01L29/06

CPC分类号： H01L33/34 ,  B82Y10/00 ,  H01L33/06

摘要： The invention relates to a semiconductor structure for use in the near infrared region, preferably in the range from 1.3 to 1.6 μm, said structure comprising an active zone consisting of a plurality of epitaxially grown alternating layers of Si and Ge, a base layer of a first conductivity type disposed on one side of said active zone, and a cladding layer of the opposite conductivity type to the base layer, the cladding layer being provided on the opposite side of said active zone from said base layer, wherein the alternating Si and Ge layers of said active zone form a superlattice so that holes are located in quantized energy levels associated with a valance band and electrons are localized in a miniband associated with the conduction band and resulting from the superlattice structure. The invention is also directed to a method of manufacturing aforementioned structure.

摘要翻译： 本发明涉及用于近红外区域的半导体结构，优选在1.3至1.6μm的范围内，所述结构包括由多个外延生长的Si和Ge的交替层组成的活性区， 第一导电类型设置在所述有源区的一侧，以及与所述基极层相反的导电类型的覆层，所述包层设置在所述有源区与所述基极层的相反侧，其中所述交替的Si和Ge 所述有源区的层形成超晶格，使得空穴位于与价带相关联的量化能级中，并且电子被定位在与导带相关联并由超晶格结构产生的微型卫星中。 本发明还涉及一种制造上述结构的方法。