公开(公告)号：US5643364A

公开(公告)日：1997-07-01

申请号：US641948

申请日：1996-05-02

申请人： Jun Zhao ,  Stefan Wolff ,  Kenneth Smyth ,  William Nixon Taylor, Jr. ,  Gerald McNutt

发明人： Jun Zhao ,  Stefan Wolff ,  Kenneth Smyth ,  William Nixon Taylor, Jr. ,  Gerald McNutt

IPC分类号： H01L21/02 ,  H01J37/32 ,  H05H1/46 ,  C23C16/00

CPC分类号： H01J37/32174 ,  H01J37/32082 ,  H01J37/32935 ,  H01J37/3299 ,  H05H1/46

摘要： A plasma chamber RF excitation system includes a high frequency RF power source having a fixed RF match circuit at its output and sensing and control apparatus for sensing the amount of RF power delivered by the RF power source and for regulating the output power level of the RF power source so as to maintain the RF power delivered by the RF power source at a desired level, and an RF plasma chamber including an RF radiator. The power source is mounted proximate or directly on the plasma chamber so that the distance between them is much less than an eighth of a wavelength at thr frequency of the RF source. The system may further include an endpoint detector for a plasma etch process or a chamber cleaning process which halts the process when the VSWR or reflected power ceases to change in response to the progress of the etch process.

摘要翻译： 等离子体室RF激励系统包括在其输出端具有固定RF匹配电路的高频RF电源，以及感测和控制装置，用于感测由RF电源传送的RF功率的量并用于调节RF的输出功率电平 电源，以将由RF电源提供的RF功率维持在期望的水平，以及包括RF辐射器的RF等离子体室。 电源靠近或直接安装在等离子体室上，使得它们之间的距离远小于RF源频率的波长的八分之一。 该系统还可以包括用于等离子体蚀刻工艺的端点检测器或室清洁过程，当VSWR或反射功率响应于蚀刻过程的进行而停止变化时，该过程停止该过程。