公开(公告)号：US08014208B1

公开(公告)日：2011-09-06

申请号：US12357940

申请日：2009-01-22

Applicant: Gianfranco Ferrante ,  Dionisio Minopoli ,  Angelo Avino

Inventor： Gianfranco Ferrante ,  Dionisio Minopoli ,  Angelo Avino

IPC: G11C11/34

CPC classification number: G11C16/344

Abstract: Example embodiments for verifying an erase operation for a flash memory device may comprise, for one or more embodiments, utilizing program operation verification circuitry to verify, at least in part, the erase operation.

Abstract translation: 用于验证闪存设备的擦除操作的示例性实施例可以包括对于一个或多个实施例，使用程序操作验证电路至少部分地验证擦除操作。

公开(公告)号：US20070109856A1

公开(公告)日：2007-05-17

申请号：US11557786

申请日：2006-11-08

Applicant: Demetrio Pellicone ,  Adamo Corsi ,  Marco Roveda ,  Concetta Di Tuoro ,  Procolo Carannante ,  Gianfranco Ferrante

Inventor： Demetrio Pellicone ,  Adamo Corsi ,  Marco Roveda ,  Concetta Di Tuoro ,  Procolo Carannante ,  Gianfranco Ferrante

IPC: G11C16/06

CPC classification number: G11C29/76 ,  G11C29/006 ,  G11C2029/1208

Abstract: A method of managing fails in a non-volatile memory device including an array of cells grouped in blocks of data storage cells includes defining in the array a first subset of user addressable blocks of cells, and a second subset of redundancy blocks of cells. Each block including at least one failed cell in the first subset is located during a test on wafer of the non-volatile memory device. Each block is marked as bad, and a bad block address table of respective codes is stored in a non-volatile memory buffer. At power-on, the bad block address table is copied from the non-volatile memory buffer to the random access memory. A block of memory cells of the first subset is verified as bad by looking up the bad block address table, and if a block is bad, then remapping access to a corresponding block of redundancy cells. A third subset of non-user addressable blocks of cells is defined in the array for storing the bad block address table of respective codes in an addressable page of cells of a block of the third subset. Each page of the third subset is associated to a corresponding redundancy block. If during the working life of the memory device a block of cells previously judged good in a test phase becomes failed, each block is marked as bad and the stored table in the random access memory is updated.

Abstract translation: 在包括分组在数据存储单元块中的单元阵列的非易失性存储器件中的管理失败的方法包括在阵列中定义用户可寻址的单元块的第一子集以及单元的冗余块的第二子集。 在非易失性存储器件的晶片上的测试期间，包括第一子集中的至少一个故障单元的每个块被定位。 每个块被标记为坏，并且各个代码的坏块地址表存储在非易失性存储器缓冲器中。 在上电时，坏块地址表从非易失性存储器缓冲区复制到随机存取存储器。 通过查找坏块地址表来验证第一子集的存储器单元的块是坏的，并且如果块是坏的，则重新映射对相应的冗余单元块的访问。 在阵列中定义了非用户可寻址单元块的第三子集，用于存储第三子块的块的可寻址寻址页的各个代码的坏块地址表。 第三子集的每一页与相应的冗余块相关联。 如果在存储器件的工作寿命期间，在测试阶段中先前判断良好的一个单元的块变得失败，则每个块被标记为坏，并且随机存取存储器中存储的表被更新。

公开(公告)号：US07571362B2

公开(公告)日：2009-08-04

申请号：US11557786

申请日：2006-11-08

Applicant: Demetrio Pellicone ,  Adamo Corsi ,  Marco Roveda ,  Concetta Di Tuoro ,  Procolo Carannante ,  Gianfranco Ferrante

Inventor： Demetrio Pellicone ,  Adamo Corsi ,  Marco Roveda ,  Concetta Di Tuoro ,  Procolo Carannante ,  Gianfranco Ferrante

IPC: G01C29/00

CPC classification number: G11C29/76 ,  G11C29/006 ,  G11C2029/1208

Abstract: A method of managing fails in a non-volatile memory device including an array of cells grouped in blocks of data storage cells includes defining in the array a first subset of user addressable blocks of cells, and a second subset of redundancy blocks of cells. A third subset of non-user addressable blocks of cells is defined in the array for storing the bad block address table of respective codes in an addressable page of cells of a block of the third subset. Each page of the third subset is associated to a corresponding redundancy block. If during the working life of the memory device a block of cells previously judged good in a test phase becomes failed, each block is marked as bad and the stored table in the random access memory is updated.

Abstract translation: 在包括分组在数据存储单元块中的单元阵列的非易失性存储器件中的管理失败的方法包括在阵列中定义用户可寻址的单元块的第一子集以及单元的冗余块的第二子集。 在阵列中定义了非用户可寻址单元块的第三子集，用于存储第三子块的块的可寻址寻址页的各个代码的坏块地址表。 第三子集的每一页与相应的冗余块相关联。 如果在存储器件的工作寿命期间，在测试阶段中先前判断良好的一个单元的块变得失败，则每个块被标记为坏，并且随机存取存储器中存储的表被更新。