公开(公告)号：US07867864B2

公开(公告)日：2011-01-11

申请号：US12160210

申请日：2007-01-04

申请人： Sebastien Nuttinck ,  Giberto Curatola ,  Erwin Hijzen ,  Philippe Meunier-Beillard

发明人： Sebastien Nuttinck ,  Giberto Curatola ,  Erwin Hijzen ,  Philippe Meunier-Beillard

IPC分类号： H01L21/336

CPC分类号： H01L29/0653 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/66545 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7834

摘要： The invention relates to a method of manufacturing a semiconductor device comprising a field effect transistor, in which method a semiconductor body of silicon with a substrate is provided at a surface thereof with a source region and a drain region of a first conductivity type which are situated above a buried isolation region and with a channel region, between the source and drain regions, of a second conductivity type, opposite to the first conductivity type, and with a gate region separated from the surface of the semiconductor body by a gate dielectric and situated above the channel region, wherein a mesa is formed in the semiconductor body in which the channel region is formed and wherein the source and drain regions are formed on both sides of the mesa in a semiconductor region that is formed using epitaxial growth, the source and drain regions thereby contacting the channel region.

摘要翻译： 本发明涉及一种制造半导体器件的方法，该半导体器件包括场效应晶体管，其中在其表面上提供具有衬底的硅半导体本体，其具有位于第一导电类型的源区和漏区 位于源极和漏极区之间的与第一导电类型相反的第二导电类型的沟道区，以及通过栅极电介质与半导体本体的表面分离的栅极区，位于 在沟道区域的上方，其中在形成沟道区的半导体本体中形成台面，并且其中源极和漏极区域形成在使用外延生长形成的半导体区域中的台面的两侧，源极和漏极区域 漏区，从而接触沟道区。