公开(公告)号：US5986323A

公开(公告)日：1999-11-16

申请号：US549267

申请日：1995-10-27

Applicant: Raffaele Zambrano ,  Giuseppe Fallico

Inventor： Raffaele Zambrano ,  Giuseppe Fallico

IPC: H01L29/73 ,  H01L21/331 ,  H01L29/10 ,  H01L29/423 ,  H01L29/732 ,  H01L27/82 ,  H01L27/102 ,  H01L29/70 ,  H01L31/11

CPC classification number: H01L29/66272 ,  H01L29/1004 ,  H01L29/42304

Abstract: A high-frequency bipolar transistor structure includes a base region of a first conductivity type formed in a silicon layer of a second conductivity type, the base region comprising an intrinsic base region surrounded by an extrinsic base region, an emitter region of the second conductivity type formed inside the intrinsic base region, the extrinsic base region and the emitter region being contacted by a first polysilicon layer and a second polysilicon layer respectively. The first and the second polysilicon layers are respectively contacted by a base metal electrode and an emitter metal electrode. Between the extrinsic base region and the first polysilicon layer, a silicide layer is provided to reduce the extrinsic base resistance of the bipolar transistor.

Abstract translation: 高频双极晶体管结构包括形成在第二导电类型的硅层中的第一导电类型的基极区域，该基极区域包括被外部基极区域包围的本征基极区域，第二导电类型的发射极区域 形成在本征基区内，外基极区和发射极区分别与第一多晶硅层和第二多晶硅层接触。 第一和第二多晶硅层分别由基底金属电极和发射极金属电极接触。 在非本征基极区域和第一多晶硅层之间，提供硅化物层以降低双极晶体管的外部基极电阻。

公开(公告)号：US5796157A

公开(公告)日：1998-08-18

申请号：US547881

申请日：1995-10-25

Applicant: Giuseppe Fallico ,  Raffaele Zambrano

Inventor： Giuseppe Fallico ,  Raffaele Zambrano

IPC: H01L29/735 ,  H01L29/00

CPC classification number: H01L29/735

Abstract: A high-frequency lateral PNP transistor includes a base region laterally delimited by P type emitter and collector regions, and at the top by a surface portion of the N type semiconductor body housing the active area of the transistor. The surface portion delimiting the base region presents no formations of insulating material grown across the surface, so that the width (W.sub.B) of the base region is reduced and ensures optimum dynamic characteristics of the transistor. The base contact may be located directly over the surface portion facing the base region, to reduce the extrinsic base resistance and overall size of the device, or it may be located remotely and connected to the base region by a buried layer and sinker region to further reduce the base width.

Abstract translation: 高频横向PNP晶体管包括由P型发射极和集电极区域横向界定的基极区域，并且在顶部由N型半导体器件的表面部分容纳晶体管的有源区域。 限定基部区域的表面部分不存在跨越表面生长的绝缘材料的形成，使得基极区域的宽度（WB）减小并且确保晶体管的最佳动态特性。 基部触点可以直接位于面向基底区域的表面部分上方，以减小外部基极电阻和器件的整体尺寸，或者可以远程定位并通过掩埋层和沉降片区域连接到基极区域以进一步 减小底宽。

公开(公告)号：US5804486A

公开(公告)日：1998-09-08

申请号：US811616

申请日：1997-03-05

Applicant: Raffaele Zambrano ,  Giuseppe Fallico

Inventor： Raffaele Zambrano ,  Giuseppe Fallico

IPC: H01L29/73 ,  H01L21/331 ,  H01L29/10 ,  H01L29/423 ,  H01L29/732

CPC classification number: H01L29/66272 ,  H01L29/1004 ,  H01L29/42304

Abstract: A high-frequency bipolar transistor structure includes a base region of a first conductivity type formed in a silicon layer of a second conductivity type, the base region comprising an intrinsic base region surrounded by an extrinsic base region, an emitter region of the second conductivity type formed inside the intrinsic base region, the extrinsic base region and the emitter region being contacted by a first polysilicon layer and a second polysilicon layer respectively. The first and the second polysilicon layers are respectively contacted by a base metal electrode and an emitter metal electrode. Between the extrinsic base region and the first polysilicon layer, a silicide layer is provided to reduce the extrinsic base resistance of the bipolar transistor.

Abstract translation: 高频双极晶体管结构包括形成在第二导电类型的硅层中的第一导电类型的基极区域，该基极区域包括被外部基极区域包围的本征基极区域，第二导电类型的发射极区域 形成在本征基区内，外基极区和发射极区分别与第一多晶硅层和第二多晶硅层接触。 第一和第二多晶硅层分别由基底金属电极和发射极金属电极接触。 在非本征基极区域和第一多晶硅层之间，提供硅化物层以降低双极晶体管的外部基极电阻。