公开(公告)号：US20070235653A1

公开(公告)日：2007-10-11

申请号：US11628871

申请日：2005-08-01

申请人： Louise Buckle ,  John Cairns ,  Jean Giess ,  Neil Gordon ,  Andrew Graham ,  Janet Hails ,  David Hall ,  Colin Hollier ,  Graham Pryce ,  Andrew Wright

发明人： Louise Buckle ,  John Cairns ,  Jean Giess ,  Neil Gordon ,  Andrew Graham ,  Janet Hails ,  David Hall ,  Colin Hollier ,  Graham Pryce ,  Andrew Wright

IPC分类号： C30B29/48 ,  H01L27/146 ,  H01L31/18

CPC分类号： C30B25/183 ,  C30B23/02 ,  C30B25/02 ,  C30B29/48 ,  H01L27/14696 ,  H01L31/1832 ,  H01L31/1836 ,  Y02E10/50

摘要： This invention relates to the manufacture of Cadmium Mercury Telluride (CMT) on patterned silicon, especially to growth of CMT on silicon substrates bearing integrated circuitry. The method of the invention involves growing CMT in selected growth windows on the silicon substrate by first growing one or more buffer layers by MBE and then growing the CMT by MOVPE. The growth windows may be defined by masking the area outside of the growth windows. Growth within the growth windows is crystalline whereas any growth outside the growth windows is polycrystalline and can be removed by etching. The invention offers a method of growing CMT structures directly on integrated circuits removing the need for hybridisation.

摘要翻译： 本发明涉及在图案化硅上制造碲化汞碲化镉（CMT），特别涉及带有集成电路的硅衬底上的CMT生长。 本发明的方法包括通过首先通过MBE生长一个或多个缓冲层，然后通过MOVPE生长CMT，在硅衬底上选择的生长窗中生长CMT。 生长窗口可以通过掩蔽生长窗口之外的区域来定义。 生长窗内的生长是结晶的，而在生长窗外部的生长是多晶的并且可以通过蚀刻去除。 本发明提供了一种在集成电路上直接生长CMT结构的方法，从而消除了对杂交的需要。