公开(公告)号：US20240222544A1

公开(公告)日：2024-07-04

申请号：US18603519

申请日：2024-03-13

Applicant: Shimon Maimon

Inventor： Shimon Maimon

IPC: H01L31/18 ,  B82Y20/00 ,  G01J5/00 ,  G01J5/061 ,  G01J5/20 ,  H01L23/38 ,  H01L27/146 ,  H01L31/0296 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/101

CPC classification number: H01L31/1832 ,  B82Y20/00 ,  G01J5/061 ,  G01J5/20 ,  H01L27/14669 ,  H01L31/02966 ,  H01L31/03046 ,  H01L31/035236 ,  H01L31/101 ,  H01L31/1844 ,  G01J2005/0077 ,  H01L23/38 ,  H01L2924/0002 ,  Y02E10/544

Abstract: A camera having an integrated dewar cooler assembly (IDCA) with an optical window, and a reduced dark current photodetector disposed within the IDCA to receive light passing through the optical window. The photodetector comprising a semiconductor photo absorbing layer, a semiconductor barrier layer having a thickness and a first side adjacent a side of the photo absorbing layer, the barrier layer exhibiting a valence band energy level substantially equal to the valence band energy level of the photo absorbing layer and a conduction band energy level exhibiting an energy gap in relation to the conduction band of the photo absorbing layer, and a contact area comprising a doped semiconductor, the contact area is adjacent a second side of the barrier layer opposing the first side. The energy gap and/or the thickness of the of the barrier layer is sufficient to minimize charge carriers tunneling and thermalization.

公开(公告)号：US20240178264A1

公开(公告)日：2024-05-30

申请号：US18435872

申请日：2024-02-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Wei HSU ,  Tsai-Hao HUNG ,  Chung-Yu LIN ,  Ying-Hsun CHEN

IPC: H01L27/146 ,  H01L31/0232 ,  H01L31/0236 ,  H01L31/028 ,  H01L31/0296 ,  H01L31/0304 ,  H01L31/032 ,  H01L31/18

CPC classification number: H01L27/14643 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14685 ,  H01L31/02327 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/1804 ,  H01L27/14612 ,  H01L27/14636 ,  H01L31/02966 ,  H01L31/03046 ,  H01L31/0324 ,  H01L31/1808 ,  H01L31/1812 ,  H01L31/1832 ,  H01L31/1844

Abstract: An integrated circuit includes a photodetector. The photodetector includes one or more dielectric structures positioned in a trench in a semiconductor substrate. The photodetector includes a photosensitive material positioned in the trench and covering the one or more dielectric structures. A dielectric layer covers the photosensitive material. The photosensitive material has an index of refraction that is greater than the indices of refraction of the dielectric structures and the dielectric layer.

公开(公告)号：US11967659B2

公开(公告)日：2024-04-23

申请号：US17439207

申请日：2019-12-05

Applicant: JX METALS CORPORATION

Inventor： Koji Murakami ,  Akira Noda ,  Ryuichi Hirano

IPC: H01L31/0296 ,  H01L27/146 ,  H01L31/08 ,  H01L31/18 ,  C30B29/48

CPC classification number: H01L31/02966 ,  H01L27/14658 ,  H01L31/085 ,  H01L31/1832 ,  C30B29/48

Abstract: Provided is a stable CdZnTe monocrystalline substrate having a small leakage current even when a high voltage is applied and having a lower variation in resistivity with respect to variations in applied voltage values. A semiconductor wafer comprising a cadmium zinc telluride monocrystal having a zinc concentration of 4.0 at % or more and 6.5 at % or less and a chlorine concentration of 0.1 ppm by mass or more and 5.0 ppm by mass or less, wherein the semiconductor wafer has a resistivity of 1.0×107 Ωcm or more and 1.0×108 Ωcm or less when a voltage of 900 V is applied, and wherein a ratio (variation ratio) of the resistivity at application of 0 V to the resistivity at application of a voltage of 900 V is 20% or less.

公开(公告)号：US11923396B2

公开(公告)日：2024-03-05

申请号：US17723127

申请日：2022-04-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Wei Hsu ,  Tsai-Hao Hung ,  Chung-Yu Lin ,  Ying-Hsun Chen

IPC: H01L27/146 ,  H01L31/0232 ,  H01L31/0236 ,  H01L31/028 ,  H01L31/18 ,  H01L31/0296 ,  H01L31/0304 ,  H01L31/032

CPC classification number: H01L27/14643 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14685 ,  H01L31/02327 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/1804 ,  H01L27/14612 ,  H01L27/14636 ,  H01L31/02966 ,  H01L31/03046 ,  H01L31/0324 ,  H01L31/1808 ,  H01L31/1812 ,  H01L31/1832 ,  H01L31/1844

Abstract: An integrated circuit includes a photodetector. The photodetector includes one or more dielectric structures positioned in a trench in a semiconductor substrate. The photodetector includes a photosensitive material positioned in the trench and covering the one or more dielectric structures. A dielectric layer covers the photosensitive material. The photosensitive material has an index of refraction that is greater than the indices of refraction of the dielectric structures and the dielectric layer.

公开(公告)号：US11876140B2

公开(公告)日：2024-01-16

申请号：US13875739

申请日：2013-05-02

Applicant: First Solar, Inc.

Inventor： Holly Ann Blaydes ,  Kristian William Andreini ,  William Hullinger Huber ,  Eugene Thomas Hinners ,  Joseph John Shiang ,  Yong Liang ,  Jongwoo Choi

IPC: H01L31/0272 ,  H01L31/073 ,  H01L31/0296 ,  H01L31/0224 ,  H01L21/02 ,  H01L31/0392 ,  H01L31/072 ,  H01L31/18 ,  C23C14/06

CPC classification number: H01L31/0272 ,  C23C14/0629 ,  H01L21/0248 ,  H01L21/0251 ,  H01L21/0256 ,  H01L21/02422 ,  H01L21/02477 ,  H01L21/02483 ,  H01L21/02491 ,  H01L21/02505 ,  H01L21/02562 ,  H01L31/0296 ,  H01L31/02963 ,  H01L31/02966 ,  H01L31/022466 ,  H01L31/03925 ,  H01L31/072 ,  H01L31/073 ,  H01L31/1832 ,  H01L31/1836 ,  Y02E10/543 ,  Y02P70/50

Abstract: A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer comprises selenium, wherein an atomic concentration of selenium varies across a thickness of the absorber layer. The photovoltaic device is substantially free of a cadmium sulfide layer.

公开(公告)号：US11784278B2

公开(公告)日：2023-10-10

申请号：US17963061

申请日：2022-10-10

Applicant: First Solar, Inc.

Inventor： Kristian William Andreini ,  Holly Ann Blaydes ,  Jongwoo Choi ,  Adam Fraser Halverson ,  Eugene Thomas Hinners ,  William Hullinger Huber ,  Yong Liang ,  Joseph John Shiang

IPC: H01L31/18 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/065 ,  H01L31/073

CPC classification number: H01L31/1828 ,  H01L31/02966 ,  H01L31/022425 ,  H01L31/065 ,  H01L31/073 ,  H01L31/1832 ,  Y02E10/543 ,  Y02P70/50

Abstract: Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.

公开(公告)号：US20190221685A1

公开(公告)日：2019-07-18

申请号：US16363499

申请日：2019-03-25

Applicant: First Solar, Inc.

Inventor： Dan Damjanovic ,  Feng Liao ,  Rick Powell ,  Rui Shao ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L31/0296 ,  H01L31/18 ,  H01L31/073

CPC classification number: H01L31/02966 ,  H01L31/073 ,  H01L31/1832 ,  H01L31/1864 ,  Y02E10/543 ,  Y02P70/521

Abstract: A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer. A photovoltaic device may include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSeTe layer over a substrate. The process includes forming a p-type cadmium selenide telluride absorber layer.

公开(公告)号：US20190109247A1

公开(公告)日：2019-04-11

申请号：US15728417

申请日：2017-10-09

Applicant: Teledyne Scientific & Imaging, LLC

Inventor： Majid Zandian

IPC: H01L31/0352 ,  H01L31/0216 ,  H01L31/0296 ,  H01L31/0336 ,  H01L31/18

CPC classification number: H01L31/035281 ,  G01J1/42 ,  H01L31/02161 ,  H01L31/02966 ,  H01L31/0336 ,  H01L31/03529 ,  H01L31/1032 ,  H01L31/1832 ,  H01L31/1868 ,  H01L31/1892

Abstract: A light sensor includes an N-type semiconductor. The light sensor further includes a P-type semiconductor stacked on at least a portion of the N-type semiconductor, partially defining a trench extending into the P-type semiconductor, and having a trench portion aligned with the trench and extending farther into the N-type semiconductor than other portions of the P-type semiconductor. The light sensor also includes a passivation layer stacked on and contacting the P-type semiconductor and partially defining the trench that extends through the passivation layer and into the P-type semiconductor. The light sensor further includes an electrical contact stacked on the passivation layer, positioned within the trench, and extending through the passivation layer into the P-type semiconductor such that photons received by the N-type semiconductor generate photocurrent resulting in a voltage at the electrical contact.

公开(公告)号：US20180196148A1

公开(公告)日：2018-07-12

申请号：US15469653

申请日：2017-03-27

Applicant: Robert D. Herpst ,  International Crystal Laboratories

Inventor： Robert D. Herpst ,  Vladimir Yakimovich

IPC: G01T1/24 ,  H01L31/18 ,  H01L31/0296 ,  H01L31/08

CPC classification number: G01T1/24 ,  H01L31/02963 ,  H01L31/02966 ,  H01L31/085 ,  H01L31/1832 ,  H01L31/1864

Abstract: The present invention provides a radiation detection system for detecting X-ray and gamma rays featuring Cd1-xMgxTe in solid solution as a crystal semiconductor and electrical connection means. The crystal has a composition in the range of Cd0.99Mg0.01Te to Cd0.71Mg0.29Te and may be doped with indium or another Group III element, which may be suitable for use at room temperature as well as controlled temperatures. The present invention further provides a method for detecting X- or gamma ray radiation by (a) providing a solid solution Cd1-xMgxTe crystal in the composition range of Cd0.99Mg0.01Te to Cd0.71Mg0.29Te; (b) providing an electrical contact means for connecting the Cd1-xMgxTe crystal to an amplification, measurement, identification or imaging means; and (c) detecting the presence of the X- or gamma ray radiation.

公开(公告)号：US20180033822A1

公开(公告)日：2018-02-01

申请号：US15729369

申请日：2017-10-10

Applicant: REDLEN TECHNOLOGIES, INC.

Inventor： Uri El-Hanany ,  Adam Densmore ,  Saeid Taherion ,  Georgios Prekas ,  Veeramani Perumal

IPC: H01L27/146 ,  H01L31/0224 ,  H01L31/18

CPC classification number: H01L27/14696 ,  H01L27/14658 ,  H01L27/14661 ,  H01L27/14687 ,  H01L27/14698 ,  H01L31/022408 ,  H01L31/1832

Abstract: A method of fabricating a solid state radiation detector method includes mechanically lapping and polishing the first and the second surfaces of a semiconductor wafer using a plurality of lapping and polishing steps. The method also includes growing passivation oxide layers by use of oxygen plasma on the top of the polished first and second surfaces in order to passivate the semiconductor wafer. Anode contacts are deposited and patterned on top of the first passivation oxide layer, which is on top of the first surface. Cathode contacts, which are either monolithic or patterned, are deposited on top of the second passivation oxide layer, which is on the second surface. Aluminum nitride encapsulation layer can be deposited over the anode contacts and patterned to encapsulate the first passivation oxide layer, while physically exposing a center portion of each anode contact to electrically connect the anode contacts.