Scanning Ion Conductance Microscopy
    1.
    发明申请
    Scanning Ion Conductance Microscopy 审中-公开
    扫描离子电导显微镜

    公开(公告)号:US20110131690A1

    公开(公告)日:2011-06-02

    申请号:US12864302

    申请日:2009-02-02

    IPC分类号: G01Q60/44

    摘要: The subject invention concerns methods for interrogating a surface using scanning ion conductance microscopy (SICM). In one embodiment, a method of the invention comprises the steps of: a) repeatedly bringing a SICM probe into proximity with the surface at discrete, spaced locations in a region of the surface and measuring surface height at each location; b) estimating surface roughness or other characteristic for the region based upon the surface height measurements; and c) repeatedly bringing the probe into proximity with the surface at discrete, spaced locations in the region, the number and location of which is based upon the estimated surface roughness or other characteristic in the region, and obtaining an image of the region with a resolution adapted to the surface roughness or other characteristic.

    摘要翻译: 本发明涉及使用扫描离子电导显微镜(SICM)询问表面的方法。 在一个实施例中,本发明的方法包括以下步骤:a)在表面的一个区域中的不连续,间隔的位置处重复使SICM探针与表面接近,并测量每个位置处的表面高度; b)基于表面高度测量来估计区域的表面粗糙度或其他特性; 以及c)在所述区域中的离散的间隔位置处重复地使所述探针靠近所述表面,所述位置的数量和位置基于所估计的表面粗糙度或所述区域中的其它特征,并且获得所述区域的图像 分辨率适应于表面粗糙度或其他特性。