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公开(公告)号:US4010487A
公开(公告)日:1977-03-01
申请号:US228645
申请日:1972-02-23
申请人: Gunter Absalon , Konrad Fischer , Rainer Grosholz
发明人: Gunter Absalon , Konrad Fischer , Rainer Grosholz
CPC分类号: H01J29/455 , H01L27/00 , Y10S257/917
摘要: A semiconductor arrangement comprises a region of a second type of conductivity formed in a semiconductor body of a first type of conductivity from one surface thereof, an insulating layer on this surface defining an opening above the said region and a resistance layer covering the opening in the insulating layer and comprising a metal silicide compound of silicon with a metal from the subgroups of groups V or VI of the periodic system which contain tungsten, molybdenum or tantalum.